The DOI matches its Crossref record; 15 of the 15 references it cites were found in a registry or an index.
Chemical control of the charge state of nitrogen-vacancy centers in diamond
Open accessAbstract
We investigate the effect of surface termination on the charge state of nitrogen-vacancy (NV) centers, which have been ion-implanted a few nanometers below the surface of diamond. We find that, when changing the surface termination from oxygen to hydrogen, previously stable NV${}^{\ensuremath{-}}$ centers convert into NV${}^{0}$ and, subsequently, into an unknown nonfluorescent state. This effect is found to depend strongly on the implantation dose. Simulations of the electronic band structure confirm the disappearance of NV${}^{\ensuremath{-}}$ in the vicinity of the hydrogen-terminated surface. The band bending, which induces a $p$-type surface conductive layer, leads to a depletion of electrons in the nitrogen-vacancies close to the surface. Therefore, hydrogen surface termination provides a chemical way to control the charge state of nitrogen-vacancy centers in diamond. Furthermore, it opens the way to electrostatic control of the charge state with the use of an external gate electrode.
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Electrically driven single-photon source at room temperature in diamond
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Integrated photonic devices in single crystal diamond
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Metadata
- Authors
- Hauf, M. V., Grotz, B., Naydenov, B., Dankerl, M., Pezzagna, S., Meijer, J., Jelezko, F., Wrachtrup, J., Stutzmann, M., Reinhard, F., & Garrido, J. A.
- Venue
- Physical Review B
- Publisher
- American Physical Society (APS)
- Published
- 2011-02-14
- Volume
- 83
- Issue
- 8
- ISSN
- 1098-0121 (ISSN-L)
- 1550-235X
- OpenAlex
- W2007599858
- Cited by
- 379
- References
- 15
- FWCI
- 11.77
- Type
- journal article
- Language
- en
- Open access
- green
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