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Temperature dependence of thermophysical properties of GaAs/AlAs periodic structure

Yu, X. Y., Chen, G., Verma, A., Smith, J. S.·1995·Applied Physics Letters

Abstract

This work investigates the temperature dependence of GaAs/AlAs thin-film structures. Based on an ac calorimetric method, the thermal diffusivity of a 700 Å/700 Å GaAs/AlAs periodic structure is measured from 190 to 450 K. Thermal conductivity of the structure is derived from the experiment. The results demonstrate that the thermal conductivity/diffusivity of the structure are lower than its corresponding bulk values. The temperature dependence of its thermophysical properties is weaker than that of typical bulk III–V materials. Interface scattering is believed as the major cause of the observed reduction in thermal conductivity.

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Metadata

Authors
Yu, X. Y., Chen, G., Verma, A., & Smith, J. S.
Venue
Applied Physics Letters
Published
1995-12-11
Volume
67
Issue
24
Pages
3554-3556
ISSN
  • 0003-6951 (ISSN-L)
  • 1077-3118
OpenAlex
W2009255354
Cited by
159
References
0
FWCI
4.30
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Temperature dependence of thermophysical properties of GaAs/AlAs periodic structure. https://app.cochat.ai/papers/10.1063/1.114919
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Yu, X. Y., Chen, G., Verma, A., & Smith, J. S. (1995). Temperature dependence of thermophysical properties of GaAs/AlAs periodic structure. Applied Physics Letters. https://doi.org/10.1063/1.114919

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