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The DOI matches its Crossref record; 15 of the 15 references it cites were found in a registry or an index.

Thermal conductivity of Si–Ge superlattices

Lee, S.-M., Cahill, David G., Venkatasubramanian, Rama·1997·Applied Physics Letters

Abstract

The thermal conductivity of Si–Ge superlattices with superlattice periods 30<L<300 Å, and a Si0.85Ge0.15 thin film alloy is measured using the 3ω method. The alloy film shows a conductivity comparable to bulk SiGe alloys while the superlattice samples have a thermal conductivity that is smaller than the alloy. For 30<L<70 Å, the thermal conductivity decreases with decreasing L; these data provide a lower limit to the interface thermal conductance G of epitaxial Si–Ge interfaces: G> 2 × 109 W m−2 K−1 at 200 K. Superlattices with relatively longer periods, L>130 Å, have smaller thermal conductivities than the short-period samples. This unexpected result is attributed to a strong disruption of the lattice vibrations by extended defects produced during lattice-mismatched growth.

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Metadata

Authors
Lee, S.-M., Cahill, D. G., & Venkatasubramanian, R.
Venue
Applied Physics Letters
Published
1997-06-02
Volume
70
Issue
22
Pages
2957-2959
ISSN
  • 0003-6951 (ISSN-L)
  • 1077-3118
OpenAlex
W1987066794
Cited by
709
References
15
FWCI
16.67
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Thermal conductivity of Si–Ge superlattices. https://app.cochat.ai/papers/10.1063/1.118755
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Lee, S.-M., Cahill, D. G., & Venkatasubramanian, R. (1997). Thermal conductivity of Si–Ge superlattices. Applied Physics Letters. https://doi.org/10.1063/1.118755

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