The DOI matches its Crossref record; 15 of the 15 references it cites were found in a registry or an index.
Thermal conductivity of Si–Ge superlattices
Abstract
The thermal conductivity of Si–Ge superlattices with superlattice periods 30<L<300 Å, and a Si0.85Ge0.15 thin film alloy is measured using the 3ω method. The alloy film shows a conductivity comparable to bulk SiGe alloys while the superlattice samples have a thermal conductivity that is smaller than the alloy. For 30<L<70 Å, the thermal conductivity decreases with decreasing L; these data provide a lower limit to the interface thermal conductance G of epitaxial Si–Ge interfaces: G> 2 × 109 W m−2 K−1 at 200 K. Superlattices with relatively longer periods, L>130 Å, have smaller thermal conductivities than the short-period samples. This unexpected result is attributed to a strong disruption of the lattice vibrations by extended defects produced during lattice-mismatched growth.
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Cites
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Cited by
Cahill, D. G., Ford, W. K., Goodson, K. E., Mahan, G. D., Majumdar, A., Maris, H. J., Merlin, R., & Phillpot, S. R. (2003) · Journal of Applied Physics · doi:10.1063/1.1524305 · Cited by 2,825
Self-citationNanoscale thermal transport. II. 2003–2012
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Self-citationPhonon scattering in silicon films with thickness of order 100 nm
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Coherent Phonon Heat Conduction in Superlattices
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Thermometry and Thermal Transport in Micro/Nanoscale Solid-State Devices and Structures
Cahill, D. G., Goodson, K., & Majumdar, A. (2002) · Journal of Heat Transfer · doi:10.1115/1.1454111 · Cited by 611
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Metadata
- Authors
- Lee, S.-M., Cahill, D. G., & Venkatasubramanian, R.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 1997-06-02
- Volume
- 70
- Issue
- 22
- Pages
- 2957-2959
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W1987066794
- Cited by
- 709
- References
- 15
- FWCI
- 16.67
- Type
- journal article
- Language
- en
- Open access
- closed
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