Cited by 144Terahertz technology and applicationsAdvanced Semiconductor Detectors and MaterialsThermography and Photoacoustic Techniques

Transient terahertz reflection spectroscopy of undoped InSb from 0.1 to 1.1 THz

Howells, S. C., Schlie, L. A.·1996·Applied Physics Letters

Abstract

Using transient terahertz reflection spectroscopy, the far-infrared (0.1–1.1 THz) reflection amplitude and associated phase change upon reflection from undoped InSb was measured between 80 and 260 K. Using the Drude model, the transient terahertz data were fit by adjusting the values for the electron mobility and carrier concentration. The close agreement between the data and model validates using the Drude model to describe the electronic and optical properties of InSb below 1 THz. These results suggest a possible application of transient terahertz reflection spectroscopy for measuring semiconductor properties of thick samples without surface contact.

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Crossref · 10.1063/1.117783

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Authors
Howells, S. C., & Schlie, L. A.
Affiliations
Kirtland Air Force Base (US)
Venue
Applied Physics Letters
Published
1996-07-22
Volume
69
Issue
4
Pages
550-552
ISSN
  • 0003-6951 (ISSN-L)
  • 1077-3118
OpenAlex
W2056991870
Cited by
144
References
0
Citations by year
2026: 5 · 2025: 7 · 2024: 7 · 2023: 10 · 2022: 9 · 2021: 8 · 2020: 11 · 2019: 9 · 2018: 8 · 2017: 7 · 2016: 6 · 2015: 5 · 2014: 8 · 2013: 8 · 2012: 2
FWCI
0.97
Type
journal article
Language
en
Open access
closed
Locations
Applied Physics Letters (publishedVersion)
Topics
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Terahertz technology and applications
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced Semiconductor Detectors and Materials
  • Physical Sciences › Engineering › Mechanics of Materials › Thermography and Photoacoustic Techniques
Keywords
indium antimonide, Drude model, electron mobility, carrier concentration, optical properties, electronic properties, semiconductor characterization

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