Cited by 143Terahertz technology and applicationsLaser-Matter Interactions and ApplicationsMicrowave and Dielectric Measurement Techniques

Measurement of optical properties of highly doped silicon by terahertz time domain reflection spectroscopy

Nashima, S., Morikawa, O., Takata, K., Hangyo, M.·2001·Applied Physics Letters

Abstract

Optical properties of doped silicon wafers have been measured by means of terahertz time domain reflection spectroscopy. A method is proposed to obtain the relative phase by reflection accurately. By using this method, the relative phase is obtained within an error of less than 10 mrad at 1 THz. The experimentally obtained complex conductivity of relatively high-doped silicon (ρ=0.136 Ω cm) in the terahertz region agrees with the simple Drude model.

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Crossref · 10.1063/1.1413498

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1 of 1 references verified0 citation errors · 0 not checkable

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  • Measurements of the phase of the electric field in reflection geometry are extremely sensitive to the relative alignment of sample and reference.

    “However, measurements of the phase of the electric field in reflection geometry are extremely sensitive to the relative alignment of sample and reference [18, 19].”
  • High-resistivity silicon is a typical reference material for THz-TDS and a good starting point to test the method.

    “High-resistivity silicon is a typical reference material for THzTDS. Several historical studies have been published since the emergence of the THz-TDS field [4, 41, 16, 42], hence this type of sample is a good starting point to test our method.”
  • Inaccurate positioning produces large errors in the results and increases the complexity of postprocessing for data extraction.

    “Inaccurate positioning produces large errors in the results, increasing the complexity of postprocessing for data extraction.”
  • Existing experimental techniques to circumvent phase sensitivity in reflection geometry are often material-specific and cannot be universally applied to all sample types.

    “Despite their effectiveness, these techniques often tend to be material-specific and cannot be universally applied to all sample types.”

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Authors
Nashima, S., Morikawa, O., Takata, K., & Hangyo, M.
Affiliations
The University of Osaka (JP)
Venue
Applied Physics Letters
Published
2001-12-10
Volume
79
Issue
24
Pages
3923-3925
ISSN
  • 0003-6951 (ISSN-L)
  • 1077-3118
OpenAlex
W2031689101
Cited by
143
References
1
Citations by year
2026: 5 · 2025: 5 · 2024: 6 · 2023: 6 · 2022: 5 · 2021: 10 · 2020: 3 · 2019: 10 · 2018: 13 · 2017: 6 · 2016: 6 · 2015: 6 · 2014: 8 · 2013: 9 · 2012: 7
FWCI
3.76
Type
journal article
Language
en
Open access
closed
Locations
Applied Physics Letters (publishedVersion)
Topics
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Terahertz technology and applications
  • Physical Sciences › Physics and Astronomy › Atomic and Molecular Physics, and Optics › Laser-Matter Interactions and Applications
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Microwave and Dielectric Measurement Techniques
Keywords
heavily doped silicon, optical properties, complex conductivity, Drude model, relative phase measurement, silicon wafers, terahertz absorption

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