Measurement of optical properties of highly doped silicon by terahertz time domain reflection spectroscopy
Abstract
Optical properties of doped silicon wafers have been measured by means of terahertz time domain reflection spectroscopy. A method is proposed to obtain the relative phase by reflection accurately. By using this method, the relative phase is obtained within an error of less than 10 mrad at 1 THz. The experimentally obtained complex conductivity of relatively high-doped silicon (ρ=0.136 Ω cm) in the terahertz region agrees with the simple Drude model.
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Measurements of the phase of the electric field in reflection geometry are extremely sensitive to the relative alignment of sample and reference.
“However, measurements of the phase of the electric field in reflection geometry are extremely sensitive to the relative alignment of sample and reference [18, 19].”
From Robust phase correction techniques for terahertz time-domain reflection spectroscopy (2024) · cites this paper as [19]
High-resistivity silicon is a typical reference material for THz-TDS and a good starting point to test the method.
“High-resistivity silicon is a typical reference material for THzTDS. Several historical studies have been published since the emergence of the THz-TDS field [4, 41, 16, 42], hence this type of sample is a good starting point to test our method.”
From THz-TDS Time-Trace Analysis for the Extraction of Material and Metamaterial Parameters (2019) · cites this paper as [42]
Inaccurate positioning produces large errors in the results and increases the complexity of postprocessing for data extraction.
“Inaccurate positioning produces large errors in the results, increasing the complexity of postprocessing for data extraction.”
From Robust phase correction techniques for terahertz time-domain reflection spectroscopy (2024) · cites this paper as [19]
Existing experimental techniques to circumvent phase sensitivity in reflection geometry are often material-specific and cannot be universally applied to all sample types.
“Despite their effectiveness, these techniques often tend to be material-specific and cannot be universally applied to all sample types.”
From Robust phase correction techniques for terahertz time-domain reflection spectroscopy (2024) · cites this paper as [19]
Cites
Transient terahertz reflection spectroscopy of undoped InSb from 0.1 to 1.1 THz
Howells, S. C., & Schlie, L. A. (1996) · Applied Physics Letters · doi:10.1063/1.117783 · Cited by 144 · see citing works
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A Review of the Terahertz Conductivity of Bulk and Nano-Materials
Lloyd-Hughes, J., & Jeon, T.-I. (2012) · Journal of Infrared, Millimeter, and Terahertz Waves · doi:10.1007/s10762-012-9905-y · Cited by 503 · see citing works
Terahertz Time-Domain Spectroscopy of Solids: A Review
Hangyo, M., Tani, M., & Nagashima, T. (2005) · International Journal of Infrared and Millimeter Waves · doi:10.1007/s10762-005-0288-1 · Cited by 258 · see citing works
Self-citationPhase-sensitive time-domain terahertz reflection spectroscopy
Pashkin, A., Kempa, M., Němec, H., Kadlec, F., & Kužel, P. (2003) · Review of Scientific Instruments · doi:10.1063/1.1614878 · Cited by 114 · see citing works
THz-TDS Time-Trace Analysis for the Extraction of Material and Metamaterial Parameters
Peretti, R., Mitryukovskiy, S., Froberger, K., Mebarki, M. A., Eliet, S., Vanwolleghem, M., & Lampin, J.-F. (2019) · IEEE Transactions on Terahertz Science and Technology · doi:10.1109/tthz.2018.2889227 · Cited by 78 · see citing works
“Several historical studies have been published since the emergence of the THz-TDS field [4], [41], [16], [42], hence this type of sample is a good starting point to test our method.”
BackgroundNumerical phase correction method for terahertz time-domain reflection spectroscopy
Vartiainen, E. M., Ino, Y., Shimano, R., Kuwata-Gonokami, M., Svirko, Y. P., & Peiponen, K.-E. (2004) · Journal of Applied Physics · doi:10.1063/1.1786345 · Cited by 79 · see citing works
Lucarini, V., Ino, Y., Peiponen, K.-E., & Kuwata-Gonokami, M. (2005) · Physical Review B · doi:10.1103/physrevb.72.125107 · Cited by 42 · see citing works
Khani, M. E., & Arbab, M. H. (2021) · IEEE Access · doi:10.1109/access.2021.3059424 · Cited by 29 · see citing works
Maeng, I., Lee, S., Han, E. Q., Zhang, Y., Oh, S. J., Nakamura, M., Yun, J.-H., Wang, L., Kwon, Y.-K., & Jung, M.-C. (2021) · NPG Asia Materials · doi:10.1038/s41427-021-00343-7 · Cited by 24 · see citing works
Han, J. W. (2025) · Journal of Laser Applications · doi:10.2351/7.0001745 · Cited by 1 · see citing works
Robust phase correction techniques for terahertz time-domain reflection spectroscopy
Jatkar, K. D., Yeh, T.-T., Pancaldi, M., & Bonetti, S. (2024) · arXiv · doi:10.48550/arxiv.2412.18662
“[18, 19, 25, 26].”
- Authors
- Nashima, S., Morikawa, O., Takata, K., & Hangyo, M.
- Affiliations
- The University of Osaka (JP)
- ORCID
- Morikawa, O.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 2001-12-10
- Volume
- 79
- Issue
- 24
- Pages
- 3923-3925
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W2031689101
- Cited by
- 143
- References
- 1
- Citations by year
- 2026: 5 · 2025: 5 · 2024: 6 · 2023: 6 · 2022: 5 · 2021: 10 · 2020: 3 · 2019: 10 · 2018: 13 · 2017: 6 · 2016: 6 · 2015: 6 · 2014: 8 · 2013: 9 · 2012: 7
- FWCI
- 3.76
- Type
- journal article
- Language
- en
- Open access
- closed
- Locations
- Applied Physics Letters (publishedVersion)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Terahertz technology and applications
- Physical Sciences › Physics and Astronomy › Atomic and Molecular Physics, and Optics › Laser-Matter Interactions and Applications
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Microwave and Dielectric Measurement Techniques
- Keywords
- heavily doped silicon, optical properties, complex conductivity, Drude model, relative phase measurement, silicon wafers, terahertz absorption
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Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
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