Solution deposition and heteroepitaxial crystallization of LaNiO3 electrodes for integrated ferroelectric devices
Abstract
Electrically conducting LaNiO3 (LNO) thin layers were deposited on (100)SrTiO3 (STO) and (100)LaAlO3 (LAO) substrates and crystallized at temperatures between 700 and 800 °C. The chemical method of deposition was solution sol-gel processing. X-ray 2θ and rocking curve measurements, φ scans, and atomic force microscopy studies revealed the degree of crystallinity and heteroepitaxy for the integrated electrodes. The full-width at half-maximum for (100) LNO deposited on LAO and STO was 0.16° and 0.25°, respectively. Surface bonding states and chemistry were examined by x-ray photoelectron spectroscopy. The room temperature resistivity of LNO electrodes deposited on STO and LAO was 460 and 340 μΩ cm, respectively.
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Epitaxial thin films obtain approximately the same resistivity from ρ = 100 μOhm·cm for the PLD technique to ρ = 340 μOhm·cm for the CSD method.
“Epitaxial thin films obtain approximately the same resistivity from ρ =100 µOhm·cm for the PLD technique [28] to ρ = 340 µOhm·cm for the CSD method [90].”
From Control of Columnar Grain Microstructure in CSD LaNiO3 Films (2023) · cites this paper as [90]
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Orientation Control Growth of Lanthanum Nickelate Thin Films Using Chemical Solution Deposition
Chen, S., Wang, G., Zhang, Y., Yang, L., & Dong, X. (2007) · Journal of the American Ceramic Society · doi:10.1111/j.1551-2916.2007.01912.x · Cited by 25 · see citing works
Control of Columnar Grain Microstructure in CSD LaNiO3 Films
Atanova, A. V., Seregin, D. S., Zhigalina, O. M., Khmelenin, D. N., Orlov, G. A., Turkina, D. I., Sigov, A. S., & Vorotilov, K. A. (2023) · Molecules · doi:10.3390/molecules28041938 · Cited by 5 · see citing works
- Authors
- Cho, C. R., Payne, D. A., & Cho, S. L.
- Affiliations
- University of Illinois Urbana-Champaign (US)
- Northwestern University (US)
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 1997-11-17
- Volume
- 71
- Issue
- 20
- Pages
- 3013-3015
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W2065935349
- Cited by
- 42
- References
- 0
- Citations by year
- 2023: 2 · 2022: 1 · 2021: 1 · 2016: 1 · 2015: 3 · 2013: 1 · 2012: 2
- FWCI
- 3.26
- Type
- journal article
- Language
- en
- Open access
- closed
- Locations
- Applied Physics Letters (publishedVersion)
- Topics
- Physical Sciences › Materials Science › Materials Chemistry › Ferroelectric and Piezoelectric Materials
- Physical Sciences › Materials Science › Materials Chemistry › Electronic and Structural Properties of Oxides
- Physical Sciences › Materials Science › Electronic, Optical and Magnetic Materials › Multiferroics and related materials
- Keywords
- LaNiO3, heteroepitaxy, thin film electrodes, ferroelectric devices, SrTiO3 substrate, LaAlO3 substrate, crystallization temperature, crystallinity, electrical resistivity, integrated electrodes
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