Orientation Control Growth of Lanthanum Nickelate Thin Films Using Chemical Solution Deposition
Abstract
Highly (100)‐ and (110)‐oriented LaNiO 3 (LNO) thin films were successfully prepared on a Si (100) substrate using the chemical solution deposition method. It was somewhat surprising to find that the orientation of LNO films depended on the heating rates of the temperature range of 200°–400°C. The samples with heating rates beyond 10°C/s showed the preferential (100) orientation, while those with heating rates below 6.67°C/s showed the preferential (110) orientation. The orientation mechanism is controlled by the thermodynamics of nucleation and crystal growth. LNO films with controlled orientation having low resistivities of 2 mΩ·cm are a good basis for integrating ferroelectric applications.
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Duan, Z., Cui, Y., Yang, Z., Li, K., Wan, Y., Lu, Z., Xie, Y., & Zhang, J. (2018) · Ceramics International · doi:10.1016/j.ceramint.2017.09.230 · Cited by 32 · see citing works
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- Authors
- Chen, S., Wang, G., Zhang, Y., Yang, L., & Dong, X.
- Venue
- Journal of the American Ceramic Society
- Publisher
- Wiley
- Published
- 2007-09-14
- Volume
- 90
- Issue
- 11
- Pages
- 3635-3637
- ISSN
- 0002-7820 (ISSN-L)
- 1551-2916
- OpenAlex
- W2057502163
- Semantic Scholar
- ae9e90ceab7bf23ade34bb27296b46660acbbe81
- Cited by
- 25
- References
- 15
- Citations by year
- 2026: 1 · 2024: 1 · 2020: 3 · 2019: 2 · 2018: 1 · 2017: 1 · 2016: 1 · 2015: 1 · 2014: 1 · 2013: 2
- FWCI
- 1.28
- Type
- journal article
- Language
- en
- Open access
- closed
- Locations
- Journal of the American Ceramic Society (publishedVersion)
- Topics
- Physical Sciences › Materials Science › Materials Chemistry › Ferroelectric and Piezoelectric Materials
- Physical Sciences › Materials Science › Materials Chemistry › Electronic and Structural Properties of Oxides
- Physical Sciences › Materials Science › Electronic, Optical and Magnetic Materials › Multiferroics and related materials
- Keywords
- LaNiO3, LaNiO3 thin films, chemical solution deposition, crystal orientation control, (100) orientation, (110) orientation, heating rate, nucleation thermodynamics, crystal growth, Si(100) substrate, low resistivity, ferroelectric applications
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