The DOI matches its Crossref record.
Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide
Abstract
Results of capacitance–voltage measurements are reported for metal–oxide–semiconductor capacitors fabricated using the 4H polytype of silicon carbide doped with either nitrogen (n) or aluminum (p). Annealing in nitric oxide after a standard oxidation/reoxidation process results in a slight increase in the defect state density in the lower portion of the band gap for p-SiC and a significant decrease in the density of states in the upper half of the gap for n-SiC. Theoretical calculations provide an explanation for these results in terms of N passivating C and C clusters at the oxide–semiconductor interface.
Overview
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Integrity signals
Registry
Cites
Statistics
Verification
Claims the paper makes
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Self-check
Percentages, sums and reported differences re-computed from the paper’s own numbers.
The self-check needs the paper’s full text.
Citations
Cited by
Chung, G. Y., Tin, C. C., Williams, J. R., McDonald, K., Chanana, R. K., Weller, R. A., Pantelides, S. T., Feldman, L. C., Holland, O. W., Das, M. K., et al. (2001) · IEEE Electron Device Letters · doi:10.1109/55.915604 · Cited by 641
Self-citationSilicon carbide benefits and advantages for power electronics circuits and systems
Elasser, A., & Chow, T. P. (2002) · Proceedings of the IEEE · doi:10.1109/jproc.2002.1021562 · Cited by 537
Reliability and performance limitations in SiC power devices
Singh, R. (2006) · Microelectronics Reliability · doi:10.1016/j.microrel.2005.10.013 · Cited by 284
Metadata
- Authors
- Chung, G. Y., Tin, C. C., Williams, J. R., McDonald, K., Di Ventra, M., Pantelides, S. T., Feldman, L. C., & Weller, R. A.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 2000-03-27
- Volume
- 76
- Issue
- 13
- Pages
- 1713-1715
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W2014845261
- Cited by
- 438
- References
- 0
- FWCI
- 17.32
- Type
- journal article
- Language
- en
- Open access
- closed
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
What counts as a claim ›How we measure confidence ›How we check this ›
Are you an author, or do you see a problem with this page? Request a review
Data sources
Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
