Reliability and performance limitations in SiC power devices
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SiC has a three times wider bandgap than Si and consequently smaller energy band offsets.
“Additionally, SiC has a three times wider bandgap than Si counterparts and consequently smaller energy band offsets [52].”
From AC Power Cycling Test Setup and Condition Monitoring Tools for SiC-Based Traction Inverters (2023) · cites this paper as [52]
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Overview of Real-Time Lifetime Prediction and Extension for SiC Power Converters
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Egin Martin, G., Verbrugge, B., Mahedi Hasan, M., El Baghdadi, M., Romano, C., & Hegazy, O. (2025) · IEEE Access · doi:10.1109/access.2025.3612315 · Cited by 8 · see citing works
- Authors
- Singh, R.
- Affiliations
- GeneSiC Semiconductor (United States) (US)
- Corresponding author
- Singh, Ranbir
- Venue
- Microelectronics Reliability
- Publisher
- Elsevier BV
- Published
- 2006-05
- Volume
- 46
- Issue
- 5-6
- Pages
- 713-730
- ISSN
- 0026-2714 (ISSN-L)
- OpenAlex
- W2013124433
- Cited by
- 284
- References
- 69
- Citations by year
- 2026: 12 · 2025: 19 · 2024: 25 · 2023: 12 · 2022: 15 · 2021: 15 · 2020: 19 · 2019: 20 · 2018: 22 · 2017: 12 · 2016: 18 · 2015: 13 · 2014: 9 · 2013: 18 · 2012: 9
- FWCI
- 6.65
- Type
- journal article
- Language
- en
- Open access
- closed
- Locations
- Microelectronics Reliability (publishedVersion)
- Funders
- National Institute of Standards and Technology
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon Carbide Semiconductor Technologies
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Semiconductor materials and devices
- Physical Sciences › Physics and Astronomy › Condensed Matter Physics › GaN-based semiconductor devices and materials
- Keywords
- silicon carbide power devices, device reliability, SiC MOSFET, SiC IGBT, SiC Schottky diodes, gate dielectric reliability, channel mobility, breakdown field, leakage current, high-temperature performance, Schottky barrier height, stacked dielectrics, tunneling, micropipes, dislocations, grain boundaries
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