Cited by 284Silicon Carbide Semiconductor TechnologiesSemiconductor materials and devicesGaN-based semiconductor devices and materials

Reliability and performance limitations in SiC power devices

Singh, Ranbir·2006·Microelectronics Reliability

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Crossref · 10.1016/j.microrel.2005.10.013

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69 of 69 references verified0 citation errors · 0 not checkable

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Authors
Singh, R.
Affiliations
GeneSiC Semiconductor (United States) (US)
Corresponding author
Singh, Ranbir
Venue
Microelectronics Reliability
Publisher
Elsevier BV
Published
2006-05
Volume
46
Issue
5-6
Pages
713-730
ISSN
0026-2714 (ISSN-L)
OpenAlex
W2013124433
Cited by
284
References
69
Citations by year
2026: 12 · 2025: 19 · 2024: 25 · 2023: 12 · 2022: 15 · 2021: 15 · 2020: 19 · 2019: 20 · 2018: 22 · 2017: 12 · 2016: 18 · 2015: 13 · 2014: 9 · 2013: 18 · 2012: 9
FWCI
6.65
Type
journal article
Language
en
Open access
closed
Locations
Microelectronics Reliability (publishedVersion)
Funders
National Institute of Standards and Technology
Topics
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon Carbide Semiconductor Technologies
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Semiconductor materials and devices
  • Physical Sciences › Physics and Astronomy › Condensed Matter Physics › GaN-based semiconductor devices and materials
Keywords
silicon carbide power devices, device reliability, SiC MOSFET, SiC IGBT, SiC Schottky diodes, gate dielectric reliability, channel mobility, breakdown field, leakage current, high-temperature performance, Schottky barrier height, stacked dielectrics, tunneling, micropipes, dislocations, grain boundaries

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