The DOI matches its Crossref record; 6 of the 6 references it cites were found in a registry or an index.
Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide
Abstract
Results presented in this letter demonstrate that the effective channel mobility of lateral, inversion-mode 4H-SiC MOSFETs is increased significantly after passivation of SiC/SiO/sub 2/ interface states near the conduction band edge by high temperature anneals in nitric oxide. Hi-lo capacitance-voltage (C-V) and ac conductance measurements indicate that, at 0.1 eV below the conduction band edge, the interface trap density decreases from approximately 2/spl times/10/sup 13/ to 2/spl times/10/sup 12/ eV/sup -1/ cm/sup -2/ following anneals in nitric oxide at 1175/spl deg/C for 2 h. The effective channel mobility for MOSFETs fabricated with either wet or dry oxides increases by an order of magnitude to approximately 30-35 cm/sup 2//V-s following the passivation anneals.
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Cites
Casady, J. B., & Johnson, R. W. (1996) · Solid-State Electronics · doi:10.1016/0038-1101(96)00045-7 · Cited by 1,445
Electron mobility in inversion and accumulation layers on thermally oxidized silicon surfaces
Sun, S. C., & Plummer, J. D. (1980) · IEEE Transactions on Electron Devices · doi:10.1109/t-ed.1980.20063 · Cited by 687
Chung, G. Y., Tin, C. C., Williams, J. R., McDonald, K., Di Ventra, M., Pantelides, S. T., Feldman, L. C., & Weller, R. A. (2000) · Applied Physics Letters · doi:10.1063/1.126167 · Cited by 438
Self-citationInterfacial characteristics of N2O and NO nitrided SiO2 grown on SiC by rapid thermal processing
Li, H.-F., Dimitrijev, S., Harrison, H. B., & Sweatman, D. (1997) · Applied Physics Letters · doi:10.1063/1.118773 · Cited by 323
Significantly improved performance of MOSFETs on silicon carbide using the 15R-SiC polytype
Schomer, R., Friedrichs, P., Peters, D., et al. (1999) · IEEE Electron Device Letters · doi:10.1109/55.761027 · Cited by 230
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Cited by
Material Science and Device Physics in SiC Technology for High-Voltage Power Devices
Kimoto, T. (2015) · Japanese Journal of Applied Physics · doi:10.7567/jjap.54.040103 · Cited by 1,176
Okamoto, D., Yano, H., Hirata, K., Hatayama, T., & Fuyuki, T. (2010) · IEEE Electron Device Letters · doi:10.1109/led.2010.2047239 · Cited by 309
Review and analysis of SiC MOSFETs’ ruggedness and reliability
Wang, J., & Jiang, X. (2020) · IET Power Electronics · doi:10.1049/iet-pel.2019.0587 · Cited by 221
Farhadi, M., Yang, F., Pu, S., Vankayalapati, B. T., & Akin, B. (2021) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2021.3049394 · Cited by 93
Time-Dependent Dielectric Breakdown of Commercial 1.2 kV 4H-SiC Power MOSFETs
Liu, T., Zhu, S., White, M. H., Salemi, A., Sheridan, D., & Agarwal, A. K. (2021) · IEEE Journal of the Electron Devices Society · doi:10.1109/jeds.2021.3091898 · Cited by 80
Metadata
- Authors
- Chung, G. Y., Tin, C. C., Williams, J. R., McDonald, K., Chanana, R. K., Weller, R. A., Pantelides, S. T., Feldman, L. C., Holland, O. W., Das, M. K., & Palmour, J. W.
- Venue
- IEEE Electron Device Letters
- Published
- 2001-04
- Volume
- 22
- Issue
- 4
- Pages
- 176-178
- ISSN
- 0741-3106 (ISSN-L)
- 1558-0563
- OpenAlex
- W2149697246
- Cited by
- 641
- References
- 6
- FWCI
- 22.58
- Type
- journal article
- Language
- en
- Open access
- closed
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- Chung, G. Y., Tin, C. C., Williams, J. R., McDonald, K., Chanana, R. K., Weller, R. A., Pantelides, S. T., Feldman, L. C., Holland, O. W., Das, M. K., & Palmour, J. W. (2001). Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide. IEEE Electron Device Letters. https://doi.org/10.1109/55.915604
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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