The DOI matches its Crossref record; 10 of the 10 references it cites were found in a registry or an index.
Reproducible switching effect in thin oxide films for memory applications
Abstract
Thin oxide films with perovskite or related structures and with transition metal doping show a reproducible switching in the leakage current with a memory effect. Positive or negative voltage pulses can switch the resistance of the oxide films between a low- and a high-impedance state in times shorter than 100 ns. The ratio between these two states is typically about 20 but can exceed six orders of magnitude. Once a low-impedance state has been achieved it persists without a power connection for months, demonstrating the feasibility of nonvolatile memory elements. Even multiple levels can be addressed to store two bits in such a simple capacitor-like structure.
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Cited by
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Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges
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Metadata
- Authors
- Beck, A., Bednorz, J. G., Gerber, C., Rossel, C., & Widmer, D.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 2000-07-03
- Volume
- 77
- Issue
- 1
- Pages
- 139-141
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W2091201490
- Cited by
- 1,122
- References
- 10
- FWCI
- 9.10
- Type
- journal article
- Language
- en
- Open access
- closed
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