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Large spontaneous spin splitting in gate-controlled two-dimensional electron gases at normal In0.75Ga0.25As/In0.75Al0.25As heterojunctions
Open accessAbstract
Amounts of spontaneous spin splittings were estimated from low-temperature magnetoresistances in two-dimensional electron gases created at In0.75Ga0.25As/In0.75Al0.25As heterojunctions under a gate bias. Typical sheet electron densities and mobilities in the raw wafers were ∼1.0×1012/cm2 and 2–5×105 cm2/V s at 1.5 K, respectively. A maximum spin-orbit coupling constant αzero of ∼30(×10−12 eV m) was obtained for the van der Pauw sample. In gated Hall-bar samples, a decrease in the αzero value with decreasing gate voltage (Vg) was first confirmed in a normal heterojunction. The main origin for such a large αzero, which is a few times larger than any previously reported, was found to be a structure-dependent so-called interface contribution in the Rashba term.
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Cited by
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Metadata
- Authors
- Sato, Y., Kita, T., Gozu, S., & Yamada, S.
- Venue
- Journal of Applied Physics
- Publisher
- AIP Publishing
- Published
- 2001-06-15
- Volume
- 89
- Issue
- 12
- Pages
- 8017-8021
- ISSN
- 0021-8979 (ISSN-L)
- 1089-7550
- OpenAlex
- W2071029145
- Cited by
- 189
- References
- 0
- FWCI
- 8.49
- Type
- journal article
- Language
- en
- Open access
- green
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- Sato, Y., Kita, T., Gozu, S., & Yamada, S. (2001). Large spontaneous spin splitting in gate-controlled two-dimensional electron gases at normal In0.75Ga0.25As/In0.75Al0.25As heterojunctions. Journal of Applied Physics. https://doi.org/10.1063/1.1362356
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