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Cited by 351

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Integration of self-assembled diblock copolymers for semiconductor capacitor fabrication

Black, C. T., Guarini, K. W., Milkove, K. R., Baker, S. M., Russell, T. P., Tuominen, M. T.·2001·Applied Physics Letters

Abstract

We combine a self-organizing diblock copolymer system with semiconductor processing to produce silicon capacitors with increased charge storage capacity over planar structures. Our process uses a diblock copolymer thin film as a mask for dry etching to roughen a silicon surface on a 30 nm length scale, which is well below photolithographic resolution limits. Electron microscopy correlates measured capacitance values with silicon etch depth, and the data agree well with a geometric estimate. This block copolymer nanotemplating process is compatible with standard semiconductor processing techniques and is scalable to large wafer dimensions.

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Metadata

Authors
Black, C. T., Guarini, K. W., Milkove, K. R., Baker, S. M., Russell, T. P., & Tuominen, M. T.
Venue
Applied Physics Letters
Published
2001-07-16
Volume
79
Issue
3
Pages
409-411
ISSN
  • 0003-6951 (ISSN-L)
  • 1077-3118
OpenAlex
W1998241405
Cited by
351
References
0
FWCI
12.94
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Integration of self-assembled diblock copolymers for semiconductor capacitor fabrication. https://app.cochat.ai/papers/10.1063/1.1383805
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Black, C. T., Guarini, K. W., Milkove, K. R., Baker, S. M., Russell, T. P., & Tuominen, M. T. (2001). Integration of self-assembled diblock copolymers for semiconductor capacitor fabrication. Applied Physics Letters. https://doi.org/10.1063/1.1383805

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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.