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Study of terahertz radiation from InAs and InSb
Abstract
Terahertz radiation from InSb and InAS, which are typical narrow band-gap semiconductors, was investigated using time-resolved THz emission measurements. When we compared between the polarity of the THz waveforms of these narrow band-gap semiconductors with that of InP, which is a wide bandgap semiconductor, we concluded that the ultrafast buildup of the photo-Dember field is the main mechanism for the emission of THz radiation in both InAs and InSb. The emission efficiency of InSb is approximately one-hundredth of that of InAs, although the electron mobility in InSb is higher than in InAs. Wavelength-dependent measurements implied that the anomalously low THz emission efficiency of InSb might be due to a reduction in transient mobility resulting from the scattering of electrons into the low-mobility L valley.
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“In longitudinal photo-Dember THz emitters such as InAs crystals32,33, excited electrons near the crystal surface diffuse more quickly into the bulk than the corresponding holes, creating currents in the direction normal to the surface (i.e., out-of-plane electric dipole).”
From Ultrafast terahertz emission from emerging symmetry-broken materials (2023) · cites this paper as [32]
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Takahashi, H., Suzuki, Y., Sakai, M., Ono, S., Sarukura, N., Sugiura, T., Hirosumi, T., & Yoshida, M. (2003) · Ultrafast Electronics and Optoelectronics (UEO) · doi:10.1364/ueo.2003.wc5
Laser Terahertz Emission Spectroscopy of Graphene/InAs Junctions
Bagsican, F. R. G., Gonzales, J. T., Zhang, X., Ma, L., Kawayama, I., Murakami, H., Vajtai, R., Ajayan, P. M., Kono, J., & Tonouchi, M. (2015) · MRS Proceedings · doi:10.1557/opl.2015.639
Self-citationGong, J., Liu, J., Chu, Z., Yang, Z., Wang, K., & Yao, J. (2016) · Chinese Physics B · doi:10.1088/1674-1056/25/10/100203
Terahertz radiation from InAs film on Si substrate
Que, C. T., Tani, M., Edamura, T., Nakajima, M., & Hangyo, M. (2006) · International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) · doi:10.1109/icimw.2004.1422078
Self-citationRoute to Photo-Enabled Random Terahertz Metasurfaces
Peters, L., Gongora, J. S. T., Tunesi, J., Pasquazi, A., Fratalocchi, A., & Peccianti, M. (2017) · OSA Advanced Photonics Congress · doi:10.1364/iprsn.2017.im2a.5
Metadata
- Authors
- Gu, P., Tani, M., Kono, S., Sakai, K., & Zhang, X.-C.
- Affiliations
- Kansai Advanced Research Center, Communications Research Laboratory 588-2 Iwaoka, Kobe 651-2492, Japan
- Rensselaer Polytechnic Institute (US)
- Venue
- Journal of Applied Physics
- Publisher
- AIP Publishing
- Published
- 2002-05-01
- Volume
- 91
- Issue
- 9
- Pages
- 5533-5537
- ISSN
- 0021-8979 (ISSN-L)
- 1089-7550
- OpenAlex
- W1965561066
- Cited by
- 326
- References
- 10
- Citations by year
- 2026: 8 · 2025: 6 · 2024: 18 · 2023: 10 · 2022: 10 · 2021: 17 · 2020: 14 · 2019: 12 · 2018: 17 · 2017: 23 · 2016: 7 · 2015: 16 · 2014: 13 · 2013: 11 · 2012: 9
- FWCI
- 10.15
- Type
- journal article
- Language
- en
- Open access
- closed
- Locations
- Journal of Applied Physics (publishedVersion)
- Funders
- Japan Science and Technology Agency
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Terahertz technology and applications
- Physical Sciences › Physics and Astronomy › Atomic and Molecular Physics, and Optics › Laser-Matter Interactions and Applications
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced Semiconductor Detectors and Materials
- Keywords
- terahertz radiation, InAs, indium antimonide, narrow-gap semiconductors, photo-Dember effect, electron scattering, L valley, emission efficiency
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