The DOI matches its Crossref record; 10 of the 10 references it cites were found in a registry or an index.
Study of terahertz radiation from InAs and InSb
Abstract
Terahertz radiation from InSb and InAS, which are typical narrow band-gap semiconductors, was investigated using time-resolved THz emission measurements. When we compared between the polarity of the THz waveforms of these narrow band-gap semiconductors with that of InP, which is a wide bandgap semiconductor, we concluded that the ultrafast buildup of the photo-Dember field is the main mechanism for the emission of THz radiation in both InAs and InSb. The emission efficiency of InSb is approximately one-hundredth of that of InAs, although the electron mobility in InSb is higher than in InAs. Wavelength-dependent measurements implied that the anomalously low THz emission efficiency of InSb might be due to a reduction in transient mobility resulting from the scattering of electrons into the low-mobility L valley.
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“In longitudinal photo-Dember THz emitters such as InAs crystals32,33, excited electrons near the crystal surface diffuse more quickly into the bulk than the corresponding holes, creating currents in the direction normal to the surface (i.e., out-of-plane electric dipole).”
From Ultrafast terahertz emission from emerging symmetry-broken materials (2023) · cites this paper as [32]
Citations
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Chen, G., Ling, F., Cheng, J., Chakraborty, D., E, Y., Komissarov, I., Amarasinghe, P. M., Palozz, W., TRIVEDI, S. B., Zhang, X.-C., et al. (2021) · International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) · doi:10.1109/irmmw-thz50926.2021.9567031
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Cecconi, V., Thomas, A. D., Wang, J. T., Lin, C.-H., Dhoot, A. S., Cutrona, A., Paul, A., Peters, L., Olivieri, L., Isgandarov, E., et al. (2026) · Scientific Reports · doi:10.1038/s41598-026-42758-8
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Xian, 林. L., Suo, P., Zuanming, 金. J., Xinmao, Y., & Ma, G. (2026) · Acta Optica Sinica (Online) · doi:10.3788/aosol260439
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Deformation-Potential-Driven Photostriction in Layered Ferroelectrics
Puri, S., Rodriguez, R., Dansou, C., Bouric, L., Sheibani, A., Paillard, C., Bellaïche, L., & Nakamura, H. (2026) · Physical Review Letters · doi:10.1103/3z14-zzj7
Metadata
- Authors
- Gu, P., Tani, M., Kono, S., Sakai, K., & Zhang, X.-C.
- Affiliations
- Kansai Advanced Research Center, Communications Research Laboratory 588-2 Iwaoka, Kobe 651-2492, Japan
- Rensselaer Polytechnic Institute (US)
- Venue
- Journal of Applied Physics
- Publisher
- AIP Publishing
- Published
- 2002-05-01
- Volume
- 91
- Issue
- 9
- Pages
- 5533-5537
- ISSN
- 0021-8979 (ISSN-L)
- 1089-7550
- OpenAlex
- W1965561066
- Cited by
- 326
- References
- 10
- Citations by year
- 2026: 8 · 2025: 6 · 2024: 18 · 2023: 10 · 2022: 10 · 2021: 17 · 2020: 14 · 2019: 12 · 2018: 17 · 2017: 23 · 2016: 7 · 2015: 16 · 2014: 13 · 2013: 11 · 2012: 9
- FWCI
- 10.15
- Type
- journal article
- Language
- en
- Open access
- closed
- Locations
- Journal of Applied Physics (publishedVersion)
- Funders
- Japan Science and Technology Agency
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Terahertz technology and applications
- Physical Sciences › Physics and Astronomy › Atomic and Molecular Physics, and Optics › Laser-Matter Interactions and Applications
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced Semiconductor Detectors and Materials
- Keywords
- terahertz radiation, InAs, indium antimonide, narrow-gap semiconductors, photo-Dember effect, electron scattering, L valley, emission efficiency
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