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Cited by 766

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Low-Frequency Negative Resistance in Thin Anodic Oxide Films

Hickmott, T. W.·1962·Journal of Applied Physics
DOI 10.1063/1.1702530
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Abstract

Negative resistance and large current densities have been observed in the direct-current—voltage characteristics of five metal-oxide-metal sandwiches prepared from evaporated metal films. The systems studied and their voltages for maximum current are: Al-SiO-Au, 3.1 V; Al-Al2O3-Au, 2.9 V; Ta-Ta2O5-Au, 2.2 V; Zr-ZrO2-Au, 2.1 V; and Ti-TiO2-Au, 1.7 V. For aluminum oxide, which has been most extensively studied, the voltage for maximum current is independent of film thickness for films between 150 and 1000 Å thick; the phenomenon is not field dependent. Peak-to-valley ratios of 30:1 and current densities of 10 A/cm2 are typical. Maximum current densities at peak voltage are 25 A/cm2; minimum current densities are 0.01 A/cm2. Switching time from peak current to valley current is <0.5 μsec but negative resistance is not found for 60-cycle voltages. Establishment of the dc characteristics and dependence on temperature and atmosphere are described. Electron emission from aluminum oxide sandwiches can occur at 2.5 V. Space-charge-limited currents in the insulator provide a possible mechanism for the current-voltage curves and large currents below the voltage for maximum current through the oxide films. The mechanism responsible for negative resistance is uncertain.

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Metadata

Authors
Hickmott, T. W.
Venue
Journal of Applied Physics
Publisher
AIP Publishing
Published
1962-09-01
Volume
33
Issue
9
Pages
2669-2682
ISSN
  • 0021-8979 (ISSN-L)
  • 1089-7550
DOI
10.1063/1.1702530
OpenAlex
W2016562169
Cited by
766
References
0
FWCI
25.44
Type
journal article
Language
en
Open access
closed

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Hickmott, T. W. (1962). Low-Frequency Negative Resistance in Thin Anodic Oxide Films. Journal of Applied Physics. https://doi.org/10.1063/1.1702530

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