Cited by 19Electronic and Structural Properties of OxidesOptical Polarization and EllipsometrySemiconductor materials and devices

High Temperature Ellipsometry of the Conductive Oxide LaNiO3

Berini, B., Noun, W., Dumont, Y., Popova, E., Keller, N.·2007·Journal of Applied Physics

Abstract

La Ni O 3 thin films have been deposited on SrTiO3 (100) by pulsed laser deposition. Substrate temperature and oxygen pressure have been investigated in the ranges of 640–840°C and 200–600μbars, respectively. The use of LaNiO3 as an electrode requires good electrical, structural, and morphological properties. Optimized deposition parameters were determined to be in the range from 650to700°C for the substrate temperature and in the oxygen pressure range from 300to400μbars. Spectroscopic ellipsometry has been used to study in situ the growth of LaNiO3 at high temperature and variation of the optical constants during the cooling from growth to ambient temperature. The metallic behavior of the LaNiO3 is directly observed from the spectral variation of the ellipsometric parameters, tanΨ and cosΔ. For the initial stages of the film growth a determination of the thickness by ellipsometry is possible until the skin depth is reached. The optical constants, refractive index n and extinction coefficient k, have been calculated using a simple model of reflection for the light from a semi-infinite metal during the thermal variation. A linear decrease of the optical constants with a change in curve slope is observed in the temperature interval from 240to400°C. Analysis of the ellipsometric parameters using a Drude-Lorentz dispersion relation indicates a modification in the free electron behavior at high temperatures.

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Crossref · 10.1063/1.2431398

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  • High quality epitaxial LNO films with resistivity as low as ~100 μOhm·cm can be prepared on single-crystal substrates with similar lattice parameters by MBE, PLD, or PVD.

    “High quality epitaxial LNO films with resistivity as low as ~100 μOhm·cm can be prepared on single-crystal substrates with similar lattice parameters (LaAlO3, SrTiO3) by molecular beam epitaxy (MBE), pulsed laser deposition (PLD), or physical vapor deposition (PVD) [27,28,29,30].”

    From Control of Columnar Grain Microstructure in CSD LaNiO3 Films (2023) · cites this paper as [29]

  • Some authors have demonstrated a columnar grain structure of LNO films using PLD and CSD techniques.

    “Some authors have demonstrated a columnar grain structure of LNO films using PLD [29] and CSD [15,22,40] techniques.”

    From Control of Columnar Grain Microstructure in CSD LaNiO3 Films (2023) · cites this paper as [29]

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Authors
Berini, B., Noun, W., Dumont, Y., Popova, E., & Keller, N.
Affiliations
  • Université de Versailles St. Quentin Groupe d’Etude de la Matière Condensée (GEMAC), , CNRS, UMR 8635, 45, Avenue des Etats-Unis, 78035 Versailles, France
  • Centre National de la Recherche Scientifique (FR)
Venue
Journal of Applied Physics
Published
2007-01-15
Volume
101
Issue
2
ISSN
  • 0021-8979 (ISSN-L)
  • 1089-7550
OpenAlex
W1996430583
Cited by
19
References
0
Citations by year
2026: 1 · 2023: 2 · 2020: 1 · 2018: 1 · 2017: 3 · 2016: 3 · 2012: 1
FWCI
0.74
Type
journal article
Language
en
Open access
closed
Locations
  • Journal of Applied Physics (publishedVersion)
  • HAL (submittedVersion)
Topics
  • Physical Sciences › Materials Science › Materials Chemistry › Electronic and Structural Properties of Oxides
  • Physical Sciences › Engineering › Biomedical Engineering › Optical Polarization and Ellipsometry
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Semiconductor materials and devices
Keywords
LaNiO3, SrTiO3 substrate, pulsed laser deposition, substrate temperature, oxygen partial pressure, in situ film growth, optical constants, refractive index, extinction coefficient, metallic behavior, electrode materials, skin depth

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