The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.
Localized switching mechanism in resistive switching of atomic-layer-deposited TiO2 thin films
Abstract
The resistance switching mechanism of TiO2 films under voltage sweep mode was investigated. From the observed soft set of Pt∕TiO2∕Pt sample and from the polarity-dependant switching behavior of Ir(O)∕TiO2∕Pt sample, local rupture and recovery of conducting filaments near the anode interface wer identified as the switching mechanism. This is consistent with the authors’ recent observation [K. Kim et al., Electrchem. Solid-State Lett. 9, G343 (2006)] of the resistance switching property of Al2O3∕TiO2 multilayers, where switching was controlled by the layer close to the anode. It appears that most parts of the filaments are preserved during switching and only a small portion of the film near the anode contributes to switching.
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Cites
Electrical phenomena in amorphous oxide films
Dearnaley, G., Stoneham, A. M., & Morgan, D. V. (1970) · Reports on Progress in Physics · doi:10.1088/0034-4885/33/3/306 · Cited by 731
Cited by
Kim, K. M., Jeong, D. S., & Hwang, C. S. (2011) · Nanotechnology · doi:10.1088/0957-4484/22/25/254002 · Cited by 631
Self-citationYoon, J. H., Song, S. J., Yoo, I., Seok, J. Y., Yoon, K. J., Kwon, D. E., Park, T. H., & Hwang, C. S. (2014) · Advanced Functional Materials · doi:10.1002/adfm.201400064 · Cited by 277
Self-citationKim, G. S., Song, H., Lee, Y. K., Kim, J. H., Kim, W., Park, T. H., Kim, H. J., Min Kim, K., & Hwang, C. S. (2019) · ACS Applied Materials & Interfaces · doi:10.1021/acsami.9b16499 · Cited by 64
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Metadata
- Authors
- Kim, K. M., Choi, B. J., & Hwang, C. S.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 2007-06-11
- Volume
- 90
- Issue
- 24
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W1992430714
- Cited by
- 213
- References
- 1
- FWCI
- 23.00
- Type
- journal article
- Language
- en
- Open access
- closed
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- Kim, K. M., Choi, B. J., & Hwang, C. S. (2007). Localized switching mechanism in resistive switching of atomic-layer-deposited TiO2 thin films. Applied Physics Letters. https://doi.org/10.1063/1.2748312
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