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Cited by 213

The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.

Localized switching mechanism in resistive switching of atomic-layer-deposited TiO2 thin films

Kim, Kyung Min, Choi, Byung Joon, Hwang, Cheol Seong·2007·Applied Physics Letters

Abstract

The resistance switching mechanism of TiO2 films under voltage sweep mode was investigated. From the observed soft set of Pt∕TiO2∕Pt sample and from the polarity-dependant switching behavior of Ir(O)∕TiO2∕Pt sample, local rupture and recovery of conducting filaments near the anode interface wer identified as the switching mechanism. This is consistent with the authors’ recent observation [K. Kim et al., Electrchem. Solid-State Lett. 9, G343 (2006)] of the resistance switching property of Al2O3∕TiO2 multilayers, where switching was controlled by the layer close to the anode. It appears that most parts of the filaments are preserved during switching and only a small portion of the film near the anode contributes to switching.

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Metadata

Authors
Kim, K. M., Choi, B. J., & Hwang, C. S.
Venue
Applied Physics Letters
Published
2007-06-11
Volume
90
Issue
24
ISSN
  • 0003-6951 (ISSN-L)
  • 1077-3118
OpenAlex
W1992430714
Cited by
213
References
1
FWCI
23.00
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Localized switching mechanism in resistive switching of atomic-layer-deposited TiO2 thin films. https://app.cochat.ai/papers/10.1063/1.2748312
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Kim, K. M., Choi, B. J., & Hwang, C. S. (2007). Localized switching mechanism in resistive switching of atomic-layer-deposited TiO2 thin films. Applied Physics Letters. https://doi.org/10.1063/1.2748312

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