High speed resistive switching in Pt∕TiO2∕TiN film for nonvolatile memory application
Yoshida, Chikako, Tsunoda, Kohji, Noshiro, Hideyuki, Sugiyama, Yoshihiro·2007·Applied Physics Letters
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- Effects of inserting ultrathin TaOx layer in Pt/TiO2 interface on resistive switching characteristicsGuobin Wei, Hideki Murakami, Tomohiro Fujioka, Akio Ohta, Yuta Goto, Seiichiro Higashi, Seiichi Miyazaki · 2011 · International Meeting for Future of Electron Devices (IMFEDK)
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- The Impact of Y Addition into TiO2on Electronic States and Resistive Switching CharacteristicsAkio Ohta, Yuta Goto, Mohd Fairuz Kazalman, Guobin Wei, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki · 2011 · Japanese Journal of Applied Physics
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