High speed resistive switching in Pt∕TiO2∕TiN film for nonvolatile memory application

Cited by (272)

Items 201–272 of 272

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  3. Sub-micro watt resistive memories using nano-crystallized aluminum oxynitride dielectric
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  6. Materials Engineering with Swift Heavy Ions
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  19. SPICE Behavioral Modeling of TiO2 Memristors for Digital Logic Applications
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  20. Interface‐engineered resistive memory using plasma‐modified electrode on polyimide substrate
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  21. Understanding memristors and selectors for future storage and computing applications: Modeling and analysis
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  32. Magnetic Properties of Co-Doped TiO 2 Films Grown on TiN Buffered Silicon Substrates
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  39. Nanotechnology for Computers, Memories, and Hard Disks
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  40. Impact of Annealing Ambience on Resistive Switching in Pt/TiO2/Pt Structure
    Guobin Wei, Yuta Goto, Akio Ohta, Katsunori Makihara, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki · 2011 · IEICE Transactions on Electronics
  41. Resistance Switching Capable Polymer Nanocomposites Employing Networks of One-Dimensional Nanocarbon Wrapped by TiO2 Conformal Layer
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  42. Resistive Switching behaviour in Oxide Ion Conductor Na0.5Bi0.5Ti0.98Mg0.02O3-δ Thin Films
    Lin Guan, Yiping Guo, Fen Wu, Huanan Duan, Hua Li, Hezhou Liu · 2017 · Madridge Journal of Nanotechnology & Nanoscience
  43. Research Progress in the Resistance Switching of Transition Metal Oxides for RRAM Application: Switching Mechanism and Properties Optimization
    Qun Wang, Xiaomin Li, Lidong Chen, Xun Cao, Rui Yang, Weidong Yu · 2009 · MRS Proceedings
  44. Physics and Design of SOI FED Based Memory Cells
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  45. Defect-Rich Size-Selected Nanoclusters and Nanocrystalline Films of Titanium (IV) Oxide and Tantalum (IV) Oxide for Efficient Photocatalyst and Electroforming-Free Memristor Applications
    Saurabh Srivastava · 2016 · UWSpace (University of Waterloo)
  46. Intégration 3D de dispositifs mémoires résistives complémentaires dans le back end of line du CMOS
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  47. Effects of Annealing Temperatures on Resistive Switching Characteristics of TiO2 Based ReRAM
    Hongxia Li, Zhenguo Ji, Junhua Xi · 2013 · Journal of Inorganic Materials
  48. Modeling of a Parameter to Evaluate Multilevel Operation of Bipolar Oxide Resistive Device
    Sang-Jun Choi, Ki-Hong Kim, Woo-Young Yang, Soohaeng Cho · 2014 · IEEE Transactions on Electron Devices
  49. Theoretical and Experimental Approaches to Select Resistive Switching Material
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  50. Terahertz generation and sensing/imaging applications
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  51. Effects of inserting ultrathin TaOx layer in Pt/TiO2 interface on resistive switching characteristics
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  53. Switching Mechanism of Resistive Random Access Memory Using High-Temperature Cuprate Superconductor Bulk Single Crystal
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  55. Characteristic modification by inserted metal layer and interface graphene layer in ZnO-based resistive switching structures
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  57. Evaluation of resistive switching properties of Si-rich oxide embedded with Ti nanodots by applying constant voltage and current
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  58. A technology agnostic RRAM characterisation methodology protocol
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  59. Multibit memory operation of metal-oxide bi-layer memristors
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  60. New insights into oxidation properties and band structure of fluorescein dyes from ab initio calculations
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  62. Resistive switching characteristics of TiO2 thin films for nonvolatile memory applications
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  65. Investigating Device Degradation and Revival in Resistive Random Access Memory
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  66. Statistical, Simulation and Modeling Analysis of Variability in Memristor with Single and Bilayer Dielectrics of Hfo2 and Al2o3, a Comparison
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  67. Optimisation technologique et caractérisation électrique de mémoires résistives OxRRAM pour applications basse consommation
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  68. Nano-caractérisation des mécanismes de commutation dans les mémoires résistives à base d'HfO2
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  69. Structure–property relationship in (La,Sr)MnO3 memristive devices
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  70. Opportunities of Lead Free Perovskites Materials for Memristive Applications
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  71. RRAM-Based Neuromorphic Devices for Artificial-Intelligence Hardware: Device Physics, Materials, Processing, and Packaging
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  72. Variability in Al2O3-based resistive memories: A kinetic Monte Carlo approach
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