High speed resistive switching in Pt∕TiO2∕TiN film for nonvolatile memory application

Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition

Choi, B. J., Jeong, D. S., Kim, S. K., Rohde, C., Choi, S. M., Oh, J. H., Kim, H. J., Hwang, C. S., Szot, K., Waser, R. M., et al. (2005) · Journal of Applied Physics · doi:10.1063/1.2001146 · Cited by 1,149

Reproducible resistance switching in polycrystalline NiO films

Seo, S., Lee, M., Seo, D. H., Jeoung, E. J., Suh, D., Joung, Y. S., Yoo, I. K., Hwang, I. R., Kim, S. H., Byun, I.-S., et al. (2004) · Applied Physics Letters · doi:10.1063/1.1831560 · Cited by 932

Hysteretic current–voltage characteristics and resistance switching at an epitaxial oxide Schottky junction SrRuO3∕SrTi0.99Nb0.01O3

Fujii, T., Kawasaki, M., Sawa, A., Akoh, H., Kawazoe, Y., & Tokura, Y. (2004) · Applied Physics Letters · doi:10.1063/1.1845598 · Cited by 359

Identification of a determining parameter for resistive switching of TiO2 thin films

Rohde, C., Choi, B. J., Jeong, D. S., Choi, S., Zhao, J., & Hwang, C. S. (2005) · Applied Physics Letters · doi:10.1063/1.1968416 · Cited by 333

Ti O 2 anatase nanolayer on TiN thin film exhibiting high-speed bipolar resistive switching

Fujimoto, M., Koyama, H., Konagai, M., Hosoi, Y., Ishihara, K., Ohnishi, S., & Awaya, N. (2006) · Applied Physics Letters · doi:10.1063/1.2397006 · Cited by 221

Consideration of switching mechanism of binary metal oxide resistive junctions using a thermal reaction model

Sato, Y., Kinoshita, K., Aoki, M., & Sugiyama, Y. (2007) · Applied Physics Letters · doi:10.1063/1.2431792 · Cited by 116

Study on the resistive switching time of TiO2 thin films

Choi, B. J., Choi, S., Kim, K. M., Shin, Y. C., Hwang, C. S., Hwang, S.-Y., Cho, S., Park, S., & Hong, S.-K. (2006) · Applied Physics Letters · doi:10.1063/1.2219726 · Cited by 116

Stacked GeO/SrTiOx Resistive Memory with Ultralow Resistance Currents

Cheng, C. H., Chin, A., & Yeh, F. S. (2011) · Applied Physics Letters · doi:10.1063/1.3549689 · Cited by 29

Growth of amorphous, anatase and rutile phase TiO2 thin films on Pt/TiO2/SiO2/Si (SSTOP) substrate for resistive random access memory (ReRAM) device application

Alsaiari, M., Alhemiary, N. A., Umar, A., & Hayden, B. E. (2020) · Ceramics International · doi:10.1016/j.ceramint.2020.03.188 · Cited by 28

A TaOx-Based RRAM with Improved Uniformity and Excellent Analog Characteristics by Local Dopant Engineering

Qin, Y., Wang, Z., Ling, Y., Cai, Y., & Huang, R. (2021) · Electronics · doi:10.3390/electronics10202451 · Cited by 29

Studies on resistive switching times in NiO thin films grown by pulsed laser deposition

Misra, P., Sahu, V. K., Ajimsha, R. S., Das, A. K., & Singh, B. (2017) · Journal of Physics D Applied Physics · doi:10.1088/1361-6463/aa83ce · Cited by 28

High-Performance Single-Active-Layer Memristor Based on an Ultrananocrystalline Oxygen-Deficient TiOx Film

Srivastava, S. K., Thomas, J. P., Heinig, N. F., & Leung, K. T. (2017) · ACS Applied Materials & Interfaces · doi:10.1021/acsami.7b07971 · Cited by 28

Programmable, electroforming-free TiO x /TaO x heterojunction-based non-volatile memory devices

Srivastava, S., Thomas, J. P., & Leung, K. T. (2019) · Nanoscale · doi:10.1039/c9nr06403f · Cited by 27

Polypyridyl chromium( iii ) complexes for non-volatile memory application: impact of the coordination sphere on memory device performance

Kandasamy, B., Ramar, G., Zhou, L., Han, S., Venkatesh, S., Cheng, S., Xu, Z., Ko, C., & Roy, V. A. L. (2018) · Journal of Materials Chemistry C · doi:10.1039/c7tc04986b · Cited by 27

Electrode-controlled confinement of conductive filaments in a nanocolumn embedded symmetric–asymmetric RRAM structure

Xiao, W., Song, W., Feng, Y. P., Gao, D., Zhu, Y. H., & Ding, J. (2020) · Journal of Materials Chemistry C · doi:10.1039/c9tc06552k · Cited by 27

Existence of bipolar and unipolar resistive switching in CaZrO3 thin film device

Asif, M., & Kumar, A. (2020) · Journal of Alloys and Compounds · doi:10.1016/j.jallcom.2020.158373 · Cited by 27

Magnetism as a probe of the origin of memristive switching in p-type antiferromagnetic NiO

Wang, X., Ku, P. S., Shao, Q., Cheng, W. F., Leung, C. W., & Ruotolo, A. (2013) · Applied Physics Letters · doi:10.1063/1.4834795 · Cited by 26

Equivalent circuit modeling of the bistable conduction characteristics in electroformed thin dielectric films

Blasco, J., Ghenzi, N., Suñé, J., Lévy, P., & Miranda, E. A. (2014) · Microelectronics Reliability · doi:10.1016/j.microrel.2014.10.017 · Cited by 25

I-V measurement of NiO nanoregion during observation by transmission electron microscopy

Fujii, T., 有田正志, Hamada, K., Kondo, H., Kaji, H., Takahashi, Y., Moniwa, M., Fujiwara, I., Yamaguchi, T., Aoki, M., et al. (2011) · Journal of Applied Physics · doi:10.1063/1.3553868 · Cited by 25

Resistance Switching in Anodic Oxidized Amorphous TiO2Films

Liang, C., Terabe, K., Hasegawa, T., & Aono, M. (2008) · Applied Physics Express · doi:10.1143/apex.1.064002 · Cited by 24

Effect of the top electrode materials on the resistive switching characteristics of TiO2 thin film

Oh, S. C., Jung, H. Y., & Lee, H. (2011) · Journal of Applied Physics · doi:10.1063/1.3596576 · Cited by 24

In-situ transmission electron microscopy of conductive filaments in NiO resistance random access memory and its analysis

Fujii, T., 有田正志, Hamada, K., Takahashi, Y., & Sakaguchi, N. (2013) · Journal of Applied Physics · doi:10.1063/1.4792732 · Cited by 25

Metal Oxide Resistive Switching Memory

Yu, S., Lee, B., & Wong, H. ‐. P. (2011) · Springer series in materials science · doi:10.1007/978-1-4419-9931-3_13 · Cited by 24

Reversible transition of resistive switching induced by oxygen-vacancy and metal filaments in HfO2

Luo, W.-C., Hou, T., Lin, K.-L., Lee, Y., & Lei, T. (2013) · Solid-State Electronics · doi:10.1016/j.sse.2013.08.005 · Cited by 23

Unipolar resistive switching mechanism speculated from irreversible low resistance state of Cu2O films

Hong, S., Long, D. X., Hwang, I., Kim, J., Park, Y. C., Kang, S.-O., & Park, B. H. (2011) · Applied Physics Letters · doi:10.1063/1.3619833 · Cited by 22

Engineering of forming-free resistive switching characteristics in ZrO 2 films

Du, G., Li, T., Wang, C., Fang, B., Zhang, B., & Zeng, Z. (2015) · Journal of Physics D Applied Physics · doi:10.1088/0022-3727/48/22/225301 · Cited by 21

Conductive Filament Expansion in TaOxBipolar Resistive Random Access Memory during Pulse Cycling

Ninomiya, T., Katayama, K., Muraoka, S., Yasuhara, R., Mikawa, T., & Wei, Z. (2013) · Japanese Journal of Applied Physics · doi:10.7567/jjap.52.114201 · Cited by 21

Studies on transient characteristics of unipolar resistive switching processes in TiO 2 thin film grown by atomic layer deposition

Sahu, V. K., Das, A. K., Ajimsha, R. S., & Misra, P. (2018) · Journal of Physics D Applied Physics · doi:10.1088/1361-6463/aabc84 · Cited by 21

Switching mechanisms in flexible solution-processed TiO 2 memristors

Tedesco, J. L., Stephey, L. A., Hernández-Mora, M., Richter, C. A., & Gergel-Hackett, N. (2012) · Nanotechnology · doi:10.1088/0957-4484/23/30/305206 · Cited by 21

Transition metal oxide thin films for nonvolatile resistive random access memory applications

Bao, D. (2009) · Journal of the Ceramic Society of Japan · doi:10.2109/jcersj2.117.929 · Cited by 20

Resistive switching in TiO2-based metal–insulator–metal structures with Al2O3 barrier layer at the metal/dielectric interface

Hudec, B., Paskaleva, A., Jančovič, P., Dérer, J., Fedor, J., Rosova, A., Dobročka, E., & Fröhlich, K. (2014) · Thin Solid Films · doi:10.1016/j.tsf.2014.02.030 · Cited by 20

Comparison between Pt/TiO2/Pt and Pt/TaOX/TaOY/Pt based bipolar resistive switching devices

Ho, P. W. C., Hatem, F. O., Almurib, H. A. F., & Kumar, T. N. (2016) · Journal of Semiconductors · doi:10.1088/1674-4926/37/6/064001 · Cited by 21

Improvement of multi-level resistive switching characteristics in solution-processed AlO x -based non-volatile resistive memory using microwave irradiation

Kim, S.-T., & Cho, W.-J. (2017) · Semiconductor Science and Technology · doi:10.1088/1361-6641/aa9bc8 · Cited by 20

Flexible, transparent resistive switching device based on topological insulator Bi2Se3-organic composite

Das, B., Sarkar, P. K., Das, N. S., Sarkar, S., & Chattopadhyay, K. K. (2018) · Journal of Applied Physics · doi:10.1063/1.5042332 · Cited by 20

I–V hysteresis of Pr 0.7 Ca 0.3 MnO 3 during TEM observation

Fujii, T., Kaji, H., Kondo, H., Hamada, K., 有田正志, & Takahashi, Y. (2010) · IOP Conference Series Materials Science and Engineering · doi:10.1088/1757-899x/8/1/012033 · Cited by 20

Flexible Three-Bit-Per-Cell Resistive Switching Memory Using a-IGZO TFTs

Wu, S.-C., Feng, H.-T., Yu, M., Wang, I., & Hou, T. (2013) · IEEE Electron Device Letters · doi:10.1109/led.2013.2278098 · Cited by 19

Defining Switching Efficiency of Multilevel Resistive Memory with PdO as an Example

Rao, K. D. M., Sagade, A. A., John, R., Pradeep, T., & Kulkarni, G. U. (2016) · Advanced Electronic Materials · doi:10.1002/aelm.201500286 · Cited by 19

Nonvolatile resistive switching in Pr0.7Ca0.3MnO3 devices using multilayer graphene electrodes

Lee, W., Jo, G., Lee, S., Park, J., Jo, M., Lee, J., Jung, S., Kim, S., Shin, J., Park, S., et al. (2011) · Applied Physics Letters · doi:10.1063/1.3544051 · Cited by 18

Preparation of resistance random access memory samples for in situ transmission electron microscopy experiments

Kudo, M., 有田正志, Ohno, Y., Fujii, T., Hamada, K., & Takahashi, Y. (2012) · Thin Solid Films · doi:10.1016/j.tsf.2012.10.102 · Cited by 18

Configurable memristive logic block for memristive-based FPGA architectures

Ho, P. W. C., Almurib, H. A. F., & Kumar, T. N. (2016) · Integration · doi:10.1016/j.vlsi.2016.09.003 · Cited by 18

Improved resistive switching properties in stacked structures

Liu, X., Li, X. M., Wang, Q., Yu, W., Yang, R., Cao, X., Gao, X., & Chen, L. (2009) · Solid State Communications · doi:10.1016/j.ssc.2009.09.032 · Cited by 18

Memristive learning cellular automata for edge detection

Karamani, R.-E., Fyrigos, I.-A., Τσάκαλος, Κ.-Α., Ntinas, V. G., Tsompanas, M., & Sirakoulis, G. C. (2021) · Chaos Solitons & Fractals · doi:10.1016/j.chaos.2021.110700 · Cited by 17

Inhomogeneous barrier and hysteretic transport properties of Pt/SrTiO3junctions

Kim, H., Park, C.-W., Lee, S., & Kim, D. (2009) · Journal of Physics D Applied Physics · doi:10.1088/0022-3727/42/5/055306 · Cited by 17

Interfacial resistive switching properties in Ti/La0.7Ca0.3MnO3/Pt sandwich structures

Liu, X., Li, X. M., Wang, Q., Yang, R., Cao, X., Wang, Y., & Chen, L. (2010) · physica status solidi (a) · doi:10.1002/pssa.200925409 · Cited by 17

Analysis of resistance switching and conductive filaments inside Cu-Ge-S using in situ transmission electron microscopy

Fujii, T., 有田正志, Takahashi, Y., & Fujiwara, I. (2012) · Journal of materials research/Pratt's guide to venture capital sources · doi:10.1557/jmr.2011.437 · Cited by 17

Resistive switching characteristics of maghemite nanoparticle assembly

Hu, Q., Jung, S. M., Lee, H. H., Kim, Y., Choi, Y. J., Kang, D.-H., Kim, K. B., & Yoon, T. (2011) · Journal of Physics D Applied Physics · doi:10.1088/0022-3727/44/8/085403 · Cited by 16

Ultrathin quasi-2D amorphous carbon dielectric prepared from solution precursor for nanoelectronics

An, F., Wang, C., Pham, V. H., Borisevich, A. Y., Qian, J., Yin, K., Pidaparthy, S., Robinson, B., Chou, A., Lee, J., et al. (2023) · Communications Engineering · doi:10.1038/s44172-023-00141-9 · Cited by 15

Highly uniform low-power resistive memory using nitrogen-doped tantalum pentoxide

CHENG, C. ‐., Chen, P. C., Wu, Y., Wu, M.-C., Yeh, F. S., & Chin, A. (2012) · Solid-State Electronics · doi:10.1016/j.sse.2012.03.005 · Cited by 15

Oxide stoichiometry-controlled TaOx-based resistive switching behaviors

Baek, G. H., Lee, A. R., Kim, T.-Y., Im, H. S., & Hong, J. P. (2016) · Applied Physics Letters · doi:10.1063/1.4963884 · Cited by 15

Memristive synaptic device based on a natural organic material—honey for spiking neural network in biodegradable neuromorphic systems

Sueoka, B., & Zhao, F. (2022) · Journal of Physics D Applied Physics · doi:10.1088/1361-6463/ac585b · Cited by 15

Theoretical studies on distribution of resistances in multilevel bipolar oxide resistive memory by Monte Carlo method

Hur, J., Lee, S. R., Lee, M., Cho, S., & Park, Y. (2013) · Applied Physics Letters · doi:10.1063/1.4821189 · Cited by 14

First-principles study of carbon impurity effects in the pseudo-hexagonal Ta2O5

Kim, J. Y., Magyari‐Köpe, B., Nishi, Y., & Ahn, J. (2016) · Current Applied Physics · doi:10.1016/j.cap.2016.03.014 · Cited by 14

Improved current distribution in resistive memory on flexible substrate using nitrogen-rich TaN electrode

Zheng, Z.-W., Cheng, C., Chou, K.-I., Liu, M., & Chin, A. (2012) · Applied Physics Letters · doi:10.1063/1.4772003 · Cited by 14

Experimental Observation of Negative Susceptance in HfO2-Based RRAM Devices

Dueñas, S., Castán, H., García, H., Ossorio, Ó. G., Dominguez, L. A., & Miranda, E. A. (2017) · IEEE Electron Device Letters · doi:10.1109/led.2017.2723054 · Cited by 14

Effect of firing atmosphere and bottom electrode on resistive switching mode in TiO2 thin films

Lai, C., Liu, C., Hsu, C., Lee, Y.-M., Lin, J.-S., & Yang, H. (2012) · Thin Solid Films · doi:10.1016/j.tsf.2012.09.025 · Cited by 14

Transparent-conductive-oxide (TCO) buffer layer effect on the resistive switching process in metal/TiO2/TCO/metal assemblies

Filatova, E. O., Baraban, A. P., Konashuk, A. S., Konyushenko, M. A., Селиванов, А. А., Sokolov, A. A., Schaefers, F., & Drozd, V. E. (2014) · New Journal of Physics · doi:10.1088/1367-2630/16/11/113014 · Cited by 14

Variability in HfO 2 -based memristors described with a new bidimensional statistical technique

Acal, C., Maldonado, D., Cantudo, A., González, M. B., Jiménez-Molinos, F., Campabadal, F., & Roldán, J. B. (2024) · Nanoscale · doi:10.1039/d4nr01237b · Cited by 13

Evaluation of Chemical Structure and Resistance Switching Characteristics of Undoped Titanium Oxide and Titanium–Yttrium Mixed Oxide

Ohta, A., Goto, Y., Wei, G., Murakami, H., Higashi, S., & Miyazaki, S. (2011) · Japanese Journal of Applied Physics · doi:10.1143/jjap.50.10ph02 · Cited by 13

Transport properties of Ar+ irradiated resistive switching BiFeO3 thin films

Jin, L., Shuai, Y., Ou, X., Luo, W., Wu, C., Zhang, W. L., Bürger, D., Skorupa, I., You, T., Du, N., et al. (2014) · Applied Surface Science · doi:10.1016/j.apsusc.2014.12.136 · Cited by 13

Unipolar resistance switching and abnormal reset behaviors in Pt/CuO/Pt and Cu/CuO/Pt structures

Wu, L., Li, X., Gao, X., Zheng, R., Zhang, F., Liu, X., & Wang, Q. (2012) · Solid-State Electronics · doi:10.1016/j.sse.2012.01.008 · Cited by 13

Unipolar Resistive Switching Effects Based on Al/ZnO/P ++ -Si Diodes for Nonvolatile Memory Applications

Shi, W., Tai, Q., Xia, X., Yi, M.-D., Xie, L.-H., Fan, Q., Wang, L., Wei, A., & Huang, W. (2012) · Chinese Physics Letters · doi:10.1088/0256-307x/29/8/087201 · Cited by 13

CuInS 2 quantum dots-based unipolar resistive switching for non-volatile memory applications

Sharma, H., Saini, N., Lalita, Kaushik, D., Kumar, A., & Srivastava, R. (2024) · RSC Advances · doi:10.1039/d4ra01087f · Cited by 12

Magnetron Sputtered Ni ‐rich Nickel Oxide Nano‐Films for Resistive Switching Memory Applications

Liu, Z., Chen, T. P., Liu, Y., & Zhang, S. S. Y. (2012) · International Journal of Applied Ceramic Technology · doi:10.1111/j.1744-7402.2012.02798.x · Cited by 12

Improved Resistive Switching Properties of Solution-Processed TiOxFilm by Incorporating Atomic Layer Deposited TiO2layer

Kim, I., Jung, S., Shin, J., Biju, K. P., Seo, K., Siddik, M., Liu, X., Kong, J., Lee, K., & Hwang, H. (2011) · Japanese Journal of Applied Physics · doi:10.1143/jjap.50.046504 · Cited by 12

Combination of conductive filaments and Schottky behavior in multifunctional Sn1−xCuxO2−δ memristor

Mei, F., Shen, H., Li, Y., Li, L., Zang, G., Zhou, M., Ti, R., Yang, D., Huang, F., Lü, X., et al. (2017) · Applied Physics Letters · doi:10.1063/1.5005803 · Cited by 12

Point contact spectroscopy of superconductors via nanometer scale point contacts formed by resistive switching

Dvoranová, M., Pleceník, T., Moško, M., Vidiš, M., Gregor, M., Roch, T., Grančič, B., Satrapinskyy, L., Kúš, P., & Plecenik, A. (2018) · AIP Advances · doi:10.1063/1.5046806 · Cited by 12

Ultra-high bandwidth memory with 3D-stacked emerging memory cells

Abe, K., Tendulkar, M., Jameson, J. R., Griffin, P. B., Nomura, K., Fujita, S., & Nishi, Y. (2008) · IEEE International Conference on IC Design and Technology (ICICDT) · doi:10.1109/icicdt.2008.4567279 · Cited by 12

Oxide Memristors for ReRAM: Approaches, Characteristics, and Structures

Isaev, A. G., Permyakova, O. O., & Rogozhin, A. E. (2023) · Russian Microelectronics · doi:10.1134/s1063739723700257 · Cited by 12

Resistive switching phenomena in TiOx nanoparticle layers for memory applications

Goren, E., Ungureanu, M., Zazpe, R., Rozenberg, M. J., Hueso, L. E., Stoliar, P., Tsur, Y., & Casanova, F. (2014) · Applied Physics Letters · doi:10.1063/1.4897142 · Cited by 11

Redox-Based Multilevel Resistive Switching in AlFeO3 Thin-Film Heterostructures

Rao, B. N., Yasui, S., Han, Y., Hamasaki, Y., Katayama, T., Konno, T. J., Kiguchi, T., & Itoh, M. (2020) · ACS Applied Electronic Materials · doi:10.1021/acsaelm.0c00083 · Cited by 11

Resistive switching in unstructured, polycrystalline BiFeO 3 thin films with downscaled electrodes

Jin, L., Shuai, Y., Ou, X., Siles, P. F., Zeng, H., You, T., Du, N., Bürger, D., Skorupa, I., Zhou, S., et al. (2014) · physica status solidi (a) · doi:10.1002/pssa.201431298 · Cited by 11

Low power resistive random access memory using interface-engineered dielectric stack of SiO /a-Si/TiO with 1D1R-like structure

Cheng, C., Chou, K.-I., Zheng, Z.-W., & Hsu, H. (2013) · Current Applied Physics · doi:10.1016/j.cap.2013.10.019 · Cited by 10

Self-Powered Resistance-Switching Properties of Pr0.7Ca0.3MnO3 Film Driven by Triboelectric Nanogenerator

Huang, Y., Wan, L., Jiang, J., Li, L., & Zhai, J. (2022) · Nanomaterials · doi:10.3390/nano12132199 · Cited by 10

Metal-organic molecular device for non-volatile memory storage

Radha, B., Sagade, A. A., & Kulkarni, G. U. (2014) · Applied Physics Letters · doi:10.1063/1.4893755 · Cited by 10

Resistive Switching Characteristics of Resistive Random Access Memory Based on a BaxSr1-xTiO3 Thin Film Grown by a Hydrothermal Method

Zhu, J., He, J., Lu, J., Ma, C., Tao, X., Liu, W., Feng, Z., Chang, L., Li, Y., & Hu, Z. (2019) · IEEE Electron Device Letters · doi:10.1109/led.2019.2931919 · Cited by 10

Low temperature improvement on silicon oxide grown by electron-gun evaporation for resistance memory applications

Tsai, C.-T., Chang, T., Liu, P., Cheng, Y.-L., & Huang, F.-S. (2008) · Applied Physics Letters · doi:10.1063/1.2957655 · Cited by 10

Improved Resistive Switching Properties of Solution Processed TiO[sub 2] Thin Films

Biju, K. P., Liu, X., Bourim, E. M., Kim, I., Jung, S., Park, J., & Hwang, H. (2010) · Electrochemical and Solid-State Letters · doi:10.1149/1.3494433 · Cited by 10

Resistive switching characteristics of AgInZnS nanoparticles

Zhou, D., Chen, F., Han, S., Hu, W. H., Zang, Z., Hu, Z., Li, S., & Tang, X. (2018) · Ceramics International · doi:10.1016/j.ceramint.2018.08.126 · Cited by 10

Field-induced resistive switching of (Ba0.6Sr0.4)TiO3 thin films based on switching of conducting domains model

He, X., & Li, X. (2013) · Applied Physics Letters · doi:10.1063/1.4809532 · Cited by 9

Adaptive threshold in TiO 2 -based synapses

Ghenzi, N., Barella, M., Rubi, D., & Acha, C. (2019) · Journal of Physics D Applied Physics · doi:10.1088/1361-6463/aafdf3 · Cited by 9

Bipolar switching properties of amorphous TiO2 thin film grown on TiN/Si substrate

Lee, B.-S., Kim, B.-Y., Lee, J., Yoo, J. H., Hong, K. H., & Nahm, S. (2014) · Current Applied Physics · doi:10.1016/j.cap.2014.10.025 · Cited by 9

Development of ferroelectric oxides based resistive switching materials

Guan, P., Sun, Y., Wan, T., Lin, X., Xu, Z., & Chu, D. (2017) · Materials Science and Technology · doi:10.1080/02670836.2017.1366712 · Cited by 9

Resistive switching in a (00ℓ)-oriented GdK2Nb5O15 thin film with tetragonal tungsten bronze type structure

Allouche, B., Gagou, Y., Frémy, M. A., Marrec, F. L., & Marssi, M. E. (2014) · Superlattices and Microstructures · doi:10.1016/j.spmi.2014.04.008 · Cited by 8

Solid-State Electrochemical Process and Performance Optimization of Memristive Materials and Devices

Xue, W., Xu, X., & Liu, G. (2019) · Chemistry · doi:10.3390/chemistry1010005 · Cited by 8

Interface States Induced Temporary Resistance Changing Behavior in Pt/TiO2/SrTi0.993Nb0.007O3/Pt Structure

Lu, J., Yang, M., Hu, P., Lv, Q., & Li, S. (2011) · Journal of The Electrochemical Society · doi:10.1149/1.3586241 · Cited by 8

High-Speed Endurance and Switching Measurements for Memristive Switches

Shrestha, P. R., Ochia, A., Cheung, K. P., Campbell, J. P., Baumgart, H., & Harris, G. L. (2012) · Electrochemical and Solid-State Letters · doi:10.1149/2.002206esl · Cited by 8

Newly developed process integration technologies for highly reliable 40 nm ReRAM

Yoneda, S., Ito, S., Hayakawa, Y., Wei, Z., Muraoka, S., Yasuhara, R., Kawashima, K., 姫野, 敦., & Mikawa, T. (2019) · Japanese Journal of Applied Physics · doi:10.7567/1347-4065/aafd8d · Cited by 8

Research Progress in Dielectric-Layer Material Systems of Memristors

Wang, C., Li, X., Sun, Z., Liu, Y., Yang, Y., & Chen, L. (2024) · Inorganics · doi:10.3390/inorganics12030087 · Cited by 6

Electromechanically tuned resistive switching device

Li, L. (2013) · Applied Physics Letters · doi:10.1063/1.4839415 · Cited by 7

Memristors in Cellular-Automata-Based Computing:A Review

Karamani, R.-E., Fyrigos, I.-A., Ntinas, V. G., Vourkas, I., Adamatzky, A., & Sirakoulis, G. C. (2023) · Electronics · doi:10.3390/electronics12163523 · Cited by 7

Improved endurance in ultrathin Al2O3 film with a reactive Ti layer based resistive memory

Chen, P.-S., Chen, Y.-S., Lee, H.-Y., Liu, W., Gu, P.-Y., Chen, F. T., & Tsai, M. (2012) · Solid-State Electronics · doi:10.1016/j.sse.2012.05.027 · Cited by 7

Improved high‐temperature switching characteristics of Y2O3/TiOx resistive memory through carrier depletion effect

Zheng, Z., Hsu, H., Cheng, C., & Chen, P. (2014) · physica status solidi (RRL) - Rapid Research Letters · doi:10.1002/pssr.201409039 · Cited by 7

Resistive switching properties of a thin SiO2 layer with CeOx buffer layer on n+ and p+Si bottom electrodes

Hadi, M. S., Sugii, N., Wakabayashi, H., Tsutsui, K., Iwaï, H., & Kakushima, K. (2016) · Microelectronics Reliability · doi:10.1016/j.microrel.2016.06.013 · Cited by 7

Electrical and structural properties of TiO 2−δ thin film with oxygen vacancies prepared by RF magnetron sputtering using oxygen radical

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Lee, W., Jo, M., Park, J., Lee, J., Park, S., Kim, S., Jung, S., Shin, J., Lee, D., Siddik, M., et al. (2010) · physica status solidi (a) · doi:10.1002/pssa.201026559 · Cited by 6

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Kim, J. Y., Yoo, J., Youn, T.-O., Kim, S.-J., Kim, J.-N., Lee, S., Joo, M.-S., Roh, J.-S., & Park, S. (2011) · Electrochemical and Solid-State Letters · doi:10.1149/1.3591439 · Cited by 5

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