The DOI matches its Crossref record; 7 of the 7 references it cites were found in a registry or an index.
High speed resistive switching in Pt∕TiO2∕TiN film for nonvolatile memory application
Abstract
We have fabricated and investigated the bipolar resistive switching characteristics of Pt/rutile-TiO2∕TiN devices for resistance memory applications. Data writing for five-level resistance states has been demonstrated by varying the amplitude of 5ns voltage pulses. In addition, data retention of more than 256h at 85°C and an excellent endurance of over 2×106cycles have been confirmed. These results indicate that Pt∕TiO2∕TiN devices have a potential for nonvolatile multiple-valued memory devices.
Overview
Integrity signals
Registry
Cites
Statistics
Verification
Claims the paper makes
Claims other papers make about this one
Each is checked against this paper’s own text: does it say what the citing paper says it does?
In the citing paper
“For memristors, switching speeds for the SET operation (ON switching), from the high resistance state (HRS) to the low resistance state (LRS), as well as for the RESET operation (OFF switching), from the LRS to the HRS, have been observed in the single digit nanosecond range by several groups [14][15][16][17].”
From Sub-nanosecond switching of a tantalum oxide memristor (2011) · cites this paper as [15]
Citations
Cites
Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition
Choi, B. J., Jeong, D. S., Kim, S. K., Rohde, C., Choi, S. M., Oh, J. H., Kim, H. J., Hwang, C. S., Szot, K., Waser, R. M., et al. (2005) · Journal of Applied Physics · doi:10.1063/1.2001146 · Cited by 1,149
Reproducible resistance switching in polycrystalline NiO films
Seo, S., Lee, M., Seo, D. H., Jeoung, E. J., Suh, D., Joung, Y. S., Yoo, I. K., Hwang, I. R., Kim, S. H., Byun, I.-S., et al. (2004) · Applied Physics Letters · doi:10.1063/1.1831560 · Cited by 932
Fujii, T., Kawasaki, M., Sawa, A., Akoh, H., Kawazoe, Y., & Tokura, Y. (2004) · Applied Physics Letters · doi:10.1063/1.1845598 · Cited by 359
Identification of a determining parameter for resistive switching of TiO2 thin films
Rohde, C., Choi, B. J., Jeong, D. S., Choi, S., Zhao, J., & Hwang, C. S. (2005) · Applied Physics Letters · doi:10.1063/1.1968416 · Cited by 333
Ti O 2 anatase nanolayer on TiN thin film exhibiting high-speed bipolar resistive switching
Fujimoto, M., Koyama, H., Konagai, M., Hosoi, Y., Ishihara, K., Ohnishi, S., & Awaya, N. (2006) · Applied Physics Letters · doi:10.1063/1.2397006 · Cited by 221
Sato, Y., Kinoshita, K., Aoki, M., & Sugiyama, Y. (2007) · Applied Physics Letters · doi:10.1063/1.2431792 · Cited by 116
Self-citationStudy on the resistive switching time of TiO2 thin films
Choi, B. J., Choi, S., Kim, K. M., Shin, Y. C., Hwang, C. S., Hwang, S.-Y., Cho, S., Park, S., & Hong, S.-K. (2006) · Applied Physics Letters · doi:10.1063/1.2219726 · Cited by 116
Research works printed but not linked: 2
- 2006, Jpn. J. Appl. Phys., Part 2, 45, L312
- Tech. Dig. - Int. Electron Devices Meet., 2006, 793
Cited by
Sorted by citations
Resistive switching in transition metal oxides
Sawa, A. (2008) · Materials Today · doi:10.1016/s1369-7021(08)70119-6 · Cited by 2,949
Wong, H.-S. P., Lee, H.-Y., Yu, S., Chen, Y.-S., Wu, Y., Chen, P.-S., Lee, B., Chen, F. T., & Tsai, M.-J. (2012) · Proceedings of the IEEE · doi:10.1109/jproc.2012.2190369 · Cited by 2,757
Pan, F., Gao, S., Chen, C., Song, C., & Zeng, F. (2014) · Materials Science and Engineering R Reports · doi:10.1016/j.mser.2014.06.002 · Cited by 1,412
Emerging memories: resistive switching mechanisms and current status
Jeong, D. S., Thomas, R., Katiyar, R. S., Scott, J. F., Kohlstedt, H., Petraru, A., & Hwang, C. S. (2012) · Reports on Progress in Physics · doi:10.1088/0034-4885/75/7/076502 · Cited by 1,099
Short-Term Memory to Long-Term Memory Transition in a Nanoscale Memristor
Chang, T., Jo, S.-H., & Lu, W. (2011) · ACS Nano · doi:10.1021/nn202983n · Cited by 1,058
Metadata
- Authors
- Yoshida, C., Tsunoda, K., Noshiro, H., & Sugiyama, Y.
- Affiliations
- Fujitsu (Japan) (JP)
- ORCID
- Yoshida, Chikako
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 2007-11-26
- Volume
- 91
- Issue
- 22
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W2074429207
- Cited by
- 271
- References
- 7
- Citations by year
- 2026: 3 · 2025: 3 · 2024: 4 · 2023: 11 · 2022: 13 · 2021: 6 · 2020: 6 · 2019: 12 · 2018: 21 · 2017: 19 · 2016: 19 · 2015: 5 · 2014: 23 · 2013: 24 · 2012: 21
- FWCI
- 14.50
- Type
- journal article
- Language
- en
- Open access
- closed
- Locations
- Applied Physics Letters (publishedVersion)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced Memory and Neural Computing
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Ferroelectric and Negative Capacitance Devices
- Physical Sciences › Materials Science › Materials Chemistry › Phase-change materials and chalcogenides
- Keywords
- resistive switching, non-volatile memory, bipolar resistive switching, multilevel memory, data retention, endurance, high-speed switching, rutile TiO2, metal-insulator-metal devices
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
What counts as a claim ›How we measure confidence ›How we check this ›
Are you an author, or do you see a problem with this page? Request a review
