Cited by 272Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance DevicesPhase-change materials and chalcogenides

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High speed resistive switching in Pt∕TiO2∕TiN film for nonvolatile memory application

Yoshida, Chikako, Tsunoda, Kohji, Noshiro, Hideyuki, Sugiyama, Yoshihiro·2007·Applied Physics Letters

DOI 10.1063/1.2818691

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Abstract

We have fabricated and investigated the bipolar resistive switching characteristics of Pt/rutile-TiO2∕TiN devices for resistance memory applications. Data writing for five-level resistance states has been demonstrated by varying the amplitude of 5ns voltage pulses. In addition, data retention of more than 256h at 85°C and an excellent endurance of over 2×106cycles have been confirmed. These results indicate that Pt∕TiO2∕TiN devices have a potential for nonvolatile multiple-valued memory devices.

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Self-citation
Study on the resistive switching time of TiO2 thin films
Choi, B. J., Choi, S., Kim, K. M., Shin, Y. C., Hwang, C. S., Hwang, S.-Y., Cho, S., Park, S., & Hong, S.-K. (2006) · Applied Physics Letters · doi:10.1063/1.2219726 · Cited by 116

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2006, Jpn. J. Appl. Phys., Part 2, 45, L312
Tech. Dig. - Int. Electron Devices Meet., 2006, 793

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Authors: Yoshida, C., Tsunoda, K., Noshiro, H., & Sugiyama, Y.
Affiliations: Fujitsu (Japan) (JP)
ORCID: Yoshida, Chikako
Venue: Applied Physics Letters
Publisher: AIP Publishing
Published: 2007-11-26
Volume: 91
Issue: 22
ISSN: 0003-6951 (ISSN-L)
1077-3118
DOI: 10.1063/1.2818691
OpenAlex: W2074429207
Cited by: 271
References: 7
Citations by year: 2026: 3 · 2025: 3 · 2024: 4 · 2023: 11 · 2022: 13 · 2021: 6 · 2020: 6 · 2019: 12 · 2018: 21 · 2017: 19 · 2016: 19 · 2015: 5 · 2014: 23 · 2013: 24 · 2012: 21
FWCI: 14.50
Type: journal article
Language: en
Open access: closed
Locations: Applied Physics Letters (publishedVersion)
Topics: Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced Memory and Neural Computing
Physical Sciences › Engineering › Electrical and Electronic Engineering › Ferroelectric and Negative Capacitance Devices
Physical Sciences › Materials Science › Materials Chemistry › Phase-change materials and chalcogenides
Keywords: resistive switching, non-volatile memory, bipolar resistive switching, multilevel memory, data retention, endurance, high-speed switching, rutile TiO2, metal-insulator-metal devices

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High speed resistive switching in Pt∕TiO2∕TiN film for nonvolatile memory application

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