The DOI matches its Crossref record; 3 of the 3 references it cites were found in a registry or an index.
Low current resistive switching in Cu–SiO2 cells
Open accessAbstract
Resistive switching in Ir∕SiO2∕Cu memory cells was investigated. The proposed switching mechanism is the formation and dissolution of a Cu filament. Under positive bias, Cu cations migrate through SiO2 and are reduced at the counterelectrode forming a filament. The filament is dissolved under reverse bias. The write current can be reduced down to 10pA which is four orders of magnitude below published values and shows the potential of extremely low power-consuming memory cells. Furthermore, a comparison of the charge flow in the high resistance state and the energy for writing is given for write currents between 25pA and 10nA.
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Citations
Cites
Nanoionics-based resistive switching memories
Waser, R., & Aono, M. (2007) · Nature Materials · doi:10.1038/nmat2023 · Cited by 4,923
Self-citationNanoscale Memory Elements Based on Solid-State Electrolytes
Kozicki, M. N., Park, M., & Mitkova, M. (2005) · IEEE Transactions On Nanotechnology · doi:10.1109/tnano.2005.846936 · Cited by 540
Self-citationUnderstanding the switching-off mechanism in Ag+ migration based resistively switching model systems
Guo, X., Schindler, C., Menzel, S., & Waser, R. (2007) · Applied Physics Letters · doi:10.1063/1.2793686 · Cited by 248
Self-citation
Cited by
Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges
Waser, R., Dittmann, R., Staikov, G., & Szot, K. (2009) · Advanced Materials · doi:10.1002/adma.200900375 · Cited by 5,080
Self-citationSynaptic electronics: materials, devices and applications
Kuzum, D., Yu, S., & Philip Wong, H.-S. (2013) · Nanotechnology · doi:10.1088/0957-4484/24/38/382001 · Cited by 1,258
Electrochemical metallization memories—fundamentals, applications, prospects
Valov, I., Waser, R., Jameson, J. R., & Kozicki, M. N. (2011) · Nanotechnology · doi:10.1088/0957-4484/22/25/254003 · Cited by 921
Self-citationA comprehensive review on emerging artificial neuromorphic devices
Zhu, J., Zhang, T., Yang, Y., & Huang, R. (2020) · Applied Physics Reviews · doi:10.1063/1.5118217 · Cited by 758
High switching endurance in TaOx memristive devices
Yang, J. J., Zhang, M.-X., Strachan, J. P., Miao, F., Pickett, M. D., Kelley, R. D., Medeiros-Ribeiro, G., & Williams, R. S. (2010) · Applied Physics Letters · doi:10.1063/1.3524521 · Cited by 637
Metadata
- Authors
- Schindler, C., Weides, M., Kozicki, M. N., & Waser, R.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 2008-03-24
- Volume
- 92
- Issue
- 12
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W2080238890
- Cited by
- 200
- References
- 3
- FWCI
- 17.03
- Type
- journal article
- Language
- en
- Open access
- green
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- Schindler, C., Weides, M., Kozicki, M. N., & Waser, R. (2008). Low current resistive switching in Cu–SiO2 cells. Applied Physics Letters. https://doi.org/10.1063/1.2903707
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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