Epitaxial Growth and Surface Metallic Nature of LaNiO3 Thin Films
Abstract
In situ epitaxial growth control of LaNiO3 (LNO) films at high oxygen pressure has been successfully achieved using a combination of pulsed laser deposition and high-pressure reflection high-energy electron diffraction (RHEED). RHEED oscillations, indicative of epitaxial layer-by-layer growth, were clearly observed during LNO deposition under optimal conditions. The film surfaces were composed of atomically flat terraces and steps. Detailed photoelectron spectroscopy analysis of LNO grown at the optimal oxygen pressure revealed that Ni ions assume a uniform Ni3+ high-valence state and that the resultant metallic properties are preserved even at the surface and in the interface region between LNO and the LaAlO3 substrate.
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The dependence of conductivity on oxygen deficiency δ is attributed to the change in nickel valence from Ni3+ to Ni2+ with increasing δ.
“The dependence of conductivity on oxygen deficiency δ is attributed to the change in nickel valence from Ni3+ to Ni2+ with increasing δ [19,20,21].”
From Control of Columnar Grain Microstructure in CSD LaNiO3 Films (2023) · cites this paper as [20]
Oxygen deficiency is the reason for resistivity increase attributed to change in nickel valence.
“As it is known, oxygen deficiency is the reason for the resistivity increase attributed to the change in nickel valence [19,20,21,59].”
From Control of Columnar Grain Microstructure in CSD LaNiO3 Films (2023) · cites this paper as [20]
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Duan, Z., Cui, Y., Yang, Z., Li, K., Wan, Y., Lu, Z., Xie, Y., & Zhang, J. (2018) · Ceramics International · doi:10.1016/j.ceramint.2017.09.230 · Cited by 32 · see citing works
Control of Columnar Grain Microstructure in CSD LaNiO3 Films
Atanova, A. V., Seregin, D. S., Zhigalina, O. M., Khmelenin, D. N., Orlov, G. A., Turkina, D. I., Sigov, A. S., & Vorotilov, K. A. (2023) · Molecules · doi:10.3390/molecules28041938 · Cited by 5 · see citing works
- Authors
- Tsubouchi, K., Ohkubo, I., Kumigashira, H., Matsumoto, Y., Ohnishi, T., Lippmaa, M., Koinuma, H., & Oshima, M.
- Affiliations
- The University of Tokyo (JP)
- Tokyo Institute of Technology (JP)
- The Institute for Solid State Physics, The University of Tokyo (JP)
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 2008-06-30
- Volume
- 92
- Issue
- 26
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W2027363829
- Cited by
- 56
- References
- 0
- Citations by year
- 2026: 1 · 2024: 1 · 2023: 4 · 2022: 1 · 2021: 5 · 2020: 2 · 2019: 4 · 2018: 1 · 2017: 5 · 2016: 4 · 2015: 6 · 2014: 2 · 2013: 3 · 2012: 4
- FWCI
- 2.21
- Type
- journal article
- Language
- en
- Open access
- closed
- Locations
- Applied Physics Letters (publishedVersion)
- Topics
- Physical Sciences › Materials Science › Materials Chemistry › Electronic and Structural Properties of Oxides
- Physical Sciences › Materials Science › Electronic, Optical and Magnetic Materials › Magnetic and transport properties of perovskites and related materials
- Physical Sciences › Physics and Astronomy › Condensed Matter Physics › Rare-earth and actinide compounds
- Keywords
- LaNiO3, epitaxial thin films, high oxygen pressure, pulsed laser deposition, layer-by-layer growth, surface steps and terraces, photoelectron spectroscopy
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