Cited by 56Electronic and Structural Properties of OxidesMagnetic and transport properties of perovskites and related materialsRare-earth and actinide compounds

Epitaxial Growth and Surface Metallic Nature of LaNiO3 Thin Films

Tsubouchi, K., Ohkubo, I., Kumigashira, H., Matsumoto, Y., Ohnishi, T., Lippmaa, M., Koinuma, H., Oshima, M.·2008·Applied Physics Letters

Abstract

In situ epitaxial growth control of LaNiO3 (LNO) films at high oxygen pressure has been successfully achieved using a combination of pulsed laser deposition and high-pressure reflection high-energy electron diffraction (RHEED). RHEED oscillations, indicative of epitaxial layer-by-layer growth, were clearly observed during LNO deposition under optimal conditions. The film surfaces were composed of atomically flat terraces and steps. Detailed photoelectron spectroscopy analysis of LNO grown at the optimal oxygen pressure revealed that Ni ions assume a uniform Ni3+ high-valence state and that the resultant metallic properties are preserved even at the surface and in the interface region between LNO and the LaAlO3 substrate.

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Crossref · 10.1063/1.2955534

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  • The dependence of conductivity on oxygen deficiency δ is attributed to the change in nickel valence from Ni3+ to Ni2+ with increasing δ.

    “The dependence of conductivity on oxygen deficiency δ is attributed to the change in nickel valence from Ni3+ to Ni2+ with increasing δ [19,20,21].”

    From Control of Columnar Grain Microstructure in CSD LaNiO3 Films (2023) · cites this paper as [20]

  • Oxygen deficiency is the reason for resistivity increase attributed to change in nickel valence.

    “As it is known, oxygen deficiency is the reason for the resistivity increase attributed to the change in nickel valence [19,20,21,59].”

    From Control of Columnar Grain Microstructure in CSD LaNiO3 Films (2023) · cites this paper as [20]

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Authors
Tsubouchi, K., Ohkubo, I., Kumigashira, H., Matsumoto, Y., Ohnishi, T., Lippmaa, M., Koinuma, H., & Oshima, M.
Affiliations
  • The University of Tokyo (JP)
  • Tokyo Institute of Technology (JP)
  • The Institute for Solid State Physics, The University of Tokyo (JP)
Venue
Applied Physics Letters
Published
2008-06-30
Volume
92
Issue
26
ISSN
  • 0003-6951 (ISSN-L)
  • 1077-3118
OpenAlex
W2027363829
Cited by
56
References
0
Citations by year
2026: 1 · 2024: 1 · 2023: 4 · 2022: 1 · 2021: 5 · 2020: 2 · 2019: 4 · 2018: 1 · 2017: 5 · 2016: 4 · 2015: 6 · 2014: 2 · 2013: 3 · 2012: 4
FWCI
2.21
Type
journal article
Language
en
Open access
closed
Locations
Applied Physics Letters (publishedVersion)
Topics
  • Physical Sciences › Materials Science › Materials Chemistry › Electronic and Structural Properties of Oxides
  • Physical Sciences › Materials Science › Electronic, Optical and Magnetic Materials › Magnetic and transport properties of perovskites and related materials
  • Physical Sciences › Physics and Astronomy › Condensed Matter Physics › Rare-earth and actinide compounds
Keywords
LaNiO3, epitaxial thin films, high oxygen pressure, pulsed laser deposition, layer-by-layer growth, surface steps and terraces, photoelectron spectroscopy

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