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Cited by 474

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Flexible full color organic light-emitting diode display on polyimide plastic substrate driven by amorphous indium gallium zinc oxide thin-film transistors

Park, Jin-Seong, Kim, Tae-Woong, Stryakhilev, Denis, Lee, Jae-Sup, An, Sung-Guk, Pyo, Yong-Shin, Lee, Dong-Bum, Mo, Yeon Gon, Jin, Dong-Un, Chung, Ho Kyoon·2009·Applied Physics Letters

Abstract

We have fabricated 6.5 in. flexible full-color top-emission active matrix organic light-emitting diode display on a polyimide (PI) substrate driven amorphous indium gallium zinc oxide thin-film transistors (a-IGZO TFTs). The a-IGZO TFTs exhibited field-effect mobility (μFE) of 15.1 cm2/V s, subthreshold slope of 0.25 V/dec, threshold voltage (VTH) of 0.9 V. The electrical characteristics of TFTs on PI substrate, including a bias-stress instability after 1 h long gate bias at 15 V, were indistinguishable from those on glass substrate and showed high degree of spatial uniformity. TFT samples on 10 μm thick PI substrate withstood bending down to R=3 mm under tension and compression without any performance degradation.

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Metadata

Authors
Park, J.-S., Kim, T.-W., Stryakhilev, D., Lee, J.-S., An, S.-G., Pyo, Y.-S., Lee, D.-B., Mo, Y. G., Jin, D.-U., & Chung, H. K.
Venue
Applied Physics Letters
Published
2009-07-06
Volume
95
Issue
1
ISSN
  • 0003-6951 (ISSN-L)
  • 1077-3118
OpenAlex
W2000690793
Cited by
474
References
0
FWCI
24.82
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Flexible full color organic light-emitting diode display on polyimide plastic substrate driven by amorphous indium gallium zinc oxide thin-film transistors. https://app.cochat.ai/papers/10.1063/1.3159832
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Park, J.-S., Kim, T.-W., Stryakhilev, D., Lee, J.-S., An, S.-G., Pyo, Y.-S., Lee, D.-B., Mo, Y. G., Jin, D.-U., & Chung, H. K. (2009). Flexible full color organic light-emitting diode display on polyimide plastic substrate driven by amorphous indium gallium zinc oxide thin-film transistors. Applied Physics Letters. https://doi.org/10.1063/1.3159832

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