The DOI matches its Crossref record; 18 of the 18 references it cites were found in a registry or an index.
Fabrication of amorphous InGaZnO thin-film transistor-driven flexible thermal and pressure sensors
Open accessAbstract
In this work, we present the results concerning the use of amorphous indium–gallium–zinc–oxide (a-IGZO) thin-film transistor (TFT) as a driving transistor of the flexible thermal and pressure sensors which are applicable to artificial skin systems. Although the a-IGZO TFT has been attracting much attention as a driving transistor of the next-generation flat panel displays, no study has been performed about the application of this new device to the driving transistor of the flexible sensors yet. The proposed thermal sensor pixel is composed of the series-connected a-IGZO TFT and ZnO-based thermistor fabricated on a polished metal foil, and the ZnO-based thermistor is replaced by the pressure sensitive rubber in the pressure sensor pixel. In both sensor pixels, the a-IGZO TFT acts as the driving transistor and the temperature/pressure-dependent resistance of the ZnO-based thermistor/pressure-sensitive rubber mainly determines the magnitude of the output currents. The fabricated a-IGZO TFT-driven flexible thermal sensor shows around a seven times increase in the output current as the temperature increases from 20 °C to 100 °C, and the a-IGZO TFT-driven flexible pressure sensors also exhibit high sensitivity under various pressure environments.
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“Resistive metallic temperature sensors[207] and thermistors[208] are the most commonly used sensors in flexible thermal electronics.”
From Flexible Electronics and Devices as Human–Machine Interfaces for Medical Robotics (2022) · cites this paper as [208]
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Cites
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Self-citationMacroelectronics: Perspectives on Technology and Applications
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Flexible Temperature Sensor Array Based on a Graphite-Polydimethylsiloxane Composite
Shih, W., Tsao, L.-C., Lee, C.-W., Cheng, M., Chang, C., Yang, Y.-J. J., & Fan, K. (2010) · Sensors · doi:10.3390/s100403597 · Cited by 226
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Self-citationThe Effect of Deposition Conditions and Annealing on the Performance of High-Mobility GIZO TFTs
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Research works printed but not linked: 2
- He G N, 2011, Nanotechnology, 22
- Macklen E D, 1979, Thermistors
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Flexible Electronics and Devices as Human–Machine Interfaces for Medical Robotics
Heng, W., Solomon, S., & Gao, W. (2022) · Advanced Materials · doi:10.1002/adma.202107902 · Cited by 609
Ultraflexible, large-area, physiological temperature sensors for multipoint measurements
Yokota, T., Inoue, Y., Terakawa, Y., Reeder, J., Kaltenbrunner, M., Ware, T., Yang, K., Mabuchi, K., Murakawa, T., Sekino, M., et al. (2015) · Proceedings of the National Academy of Sciences · doi:10.1073/pnas.1515650112 · Cited by 382
“One practical solution is to apply multiple discrete temperature sensors to the skin such as thermocouples (11), thermistors (12), or resistive temperature detectors (4, 6, 13) with individual wirings for data readout.”
Advanced Materials for Health Monitoring with Skin‐Based Wearable Devices
Jin, H., Abu‐Raya, Y. S., & Haick, H. (2017) · Advanced Healthcare Materials · doi:10.1002/adhm.201700024 · Cited by 317
Indium–gallium–zinc–oxide thin-film transistors: Materials, devices, and applications
Zhu, Y., He, Y., Jiang, S., Zhu, L. Q., Chen, C., & Wan, Q. C. (2021) · Journal of Semiconductors · doi:10.1088/1674-4926/42/3/031101 · Cited by 153
Oxide-based thin film transistors for flexible electronics
He, Y., Wang, X., Gao, Y., Hou, Y., & Wan, Q. C. (2018) · Journal of Semiconductors · doi:10.1088/1674-4926/39/1/011005 · Cited by 53
“2 100 Tensile [120] a-IGZO PI/16 10 10000 Tensile [116] a-IGZO Paper/52 5 — Tensile [220] a-IGZO PI/20 15 10000 — [178] In2O3 PEN/— — — — [83] a-IGO PI/50 10 — — [76] a-IGZO PEN/125 4 100 Tensile [139] ZnO PI/50 25 — Tensile [208] a-IGZO PEN/25 2 — Tensile and compressive [44] a-IGZO Thin glass/70 40 — Tensile [231] a…”
BackgroundInfluential
Metadata
- Authors
- Park, I.-J., Jeong, C.-Y., Cho, I.-T., Lee, J.-H., Cho, E.-S., Kwon, S. J., Kim, B., Cheong, W.-S., Song, S.-H., & Kwon, H.-I.
- Affiliations
- Chung-Ang University (KR)
- Seoul National University (KR)
- Gachon University (KR)
- Electronics and Telecommunications Research Institute (KR)
- Corresponding author
- Kwon, Hyuck-In
- Venue
- Semiconductor Science and Technology
- Publisher
- IOP Publishing
- Published
- 2012-08-07
- Volume
- 27
- Issue
- 10
- Pages
- 105019
- ISSN
- 0268-1242 (ISSN-L)
- 1361-6641
- OpenAlex
- W2172279702
- Semantic Scholar
- 58945f9f17b3bbe0bb9b37c7609628fe7f24a408
- Cited by
- 27
- References
- 18
- Citations by year
- 2025: 2 · 2024: 2 · 2023: 4 · 2022: 1 · 2021: 2 · 2020: 1 · 2019: 2 · 2018: 6 · 2017: 2 · 2016: 1 · 2015: 2 · 2014: 1 · 2013: 1
- FWCI
- 0.82
- Type
- journal article
- Language
- en
- Open access
- bronze
- doi.org
- Locations
- Semiconductor Science and Technology (publishedVersion)
- Funders
- National Research Foundation
- Chung-Ang University
- National Research Foundation of Korea
- Ministry of Education, Science and Technology
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Thin-Film Transistor Technologies
- Physical Sciences › Engineering › Biomedical Engineering › Advanced Sensor and Energy Harvesting Materials
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Nanomaterials and Printing Technologies
- Keywords
- amorphous indium gallium zinc oxide, thin-film transistors, flexible sensors, pressure sensors, artificial skin, metal foil substrates, output current
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