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Cited by 349

The DOI matches its Crossref record; 4 of the 4 references it cites were found in a registry or an index.

Thermal contact resistance between graphene and silicon dioxide

Chen, Z., Jang, W., Bao, W., Lau, C. N., Dames, C.·2009·Applied Physics Letters

Abstract

The thermal contact resistance between graphene and silicon dioxide was measured using a differential 3ω method. The sample thicknesses were 1.2 (single-layer graphene), 1.5, 2.8, and 3.0 nm, as determined by atomic force microscopy. All samples exhibited approximately the same temperature trend from 42 to 310 K, with no clear thickness dependence. The contact resistance at room temperature ranges from 5.6×10−9 to 1.2×10−8 m2 K/W, which is significantly lower than previous measurements involving related carbon materials. These results underscore graphene’s potential for applications in microelectronics and thermal management structures.

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Metadata

Authors
Chen, Z., Jang, W., Bao, W., Lau, C. N., & Dames, C.
Venue
Applied Physics Letters
Published
2009-10-19
Volume
95
Issue
16
ISSN
  • 0003-6951 (ISSN-L)
  • 1077-3118
OpenAlex
W1997949852
Cited by
349
References
4
FWCI
10.53
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Thermal contact resistance between graphene and silicon dioxide. https://app.cochat.ai/papers/10.1063/1.3245315
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Chen, Z., Jang, W., Bao, W., Lau, C. N., & Dames, C. (2009). Thermal contact resistance between graphene and silicon dioxide. Applied Physics Letters. https://doi.org/10.1063/1.3245315

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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.