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Charge trapping properties of the HfO2 layer with various thicknesses for charge trap flash memory applications
Abstract
MHOS (metal-HfO2–SiO2–Si) structure capacitors were fabricated to investigate the charge trapping properties of HfO2 layer with various thicknesses for the applications of charge trap flash (CTF) memory devices. Also, the centroid of charge trap in HfO2 layer was extracted by constant current stress method and compared with that of conventional Si3N4 layer. The gate leakage current of MHOS capacitor due to tunneling was significantly reduced by stacking the HfO2 trap layer on thin SiO2 tunnel layer. The MHOS capacitors showed a larger memory window than the MNOS (metal-Si3N4–SiO2–Si) capacitors at the same trap layer thickness, because the HfO2 layer has better charge trapping efficiency than the Si3N4 layer. It is found that ultrathin HfO2 trap layer with a thickness of 2 nm stored almost the same charges with Si3N4 layer with a thickness of 7 nm. Consequently, the application of ultrathin HfO2 to charge storage layer can considerably improve the performance and enhance the high density of CTF memory.
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“The CTM mechanism is identical to the charge‐trap flash (CTF) memory, in which reversible charge trapping and de‐trapping to the charge trap layer alter the threshold voltage of the transistor.[ 14 , 15 , 16 ]”
From Retention Secured Nonlinear and Self-Rectifying Analog Charge Trap Memristor for Energy-Efficient Neuromorphic Hardware (2023) · cites this paper as [16]
Citations
Cites
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Banerjee, W., Kashir, A., & Kamba, S. (2022) · Small · doi:10.1002/smll.202107575 · Cited by 288
Review of Semiconductor Flash Memory Devices for Material and Process Issues
Kim, S. S., Yong, S. K., Kim, W., Kang, S., Park, H. W., Yoon, K. J., Sheen, D. S., Lee, S., & Hwang, C. S. (2022) · Advanced Materials · doi:10.1002/adma.202200659 · Cited by 196
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Zhao, C., Zhao, C., Taylor, S., & Chalker, P. R. (2014) · Materials · doi:10.3390/ma7075117 · Cited by 174
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Metadata
- Authors
- You, H.-W., & Cho, W.-J.
- Affiliations
- Kwangwoon University (KR)
- ORCID
- Cho, Won-Ju
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 2010-03-01
- Volume
- 96
- Issue
- 9
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W2000947237
- Cited by
- 158
- References
- 7
- Citations by year
- 2026: 6 · 2025: 17 · 2024: 11 · 2023: 10 · 2022: 10 · 2021: 7 · 2020: 5 · 2019: 7 · 2018: 10 · 2017: 11 · 2016: 9 · 2015: 7 · 2014: 15 · 2013: 10 · 2012: 11
- FWCI
- 8.32
- Type
- journal article
- Language
- en
- Open access
- closed
- Locations
- Applied Physics Letters (publishedVersion)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Semiconductor materials and devices
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Ferroelectric and Negative Capacitance Devices
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advancements in Semiconductor Devices and Circuit Design
- Keywords
- charge trapping, hafnium oxide, charge trap flash memory, silicon nitride, gate leakage current, tunneling, memory window, high-k dielectrics
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