Charge trapping properties of the HfO2 layer with various thicknesses for charge trap flash memory applications

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Design considerations in scaled SONOS nonvolatile memory devices

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Charge trapping characteristics of atomic-layer-deposited HfO 2 films with Al 2 O 3 as a blocking oxide for high-density non-volatile memory device applications

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Electrical properties of SiO2/TiO2 high-k gate dielectric stack

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Charge trapping studies on ultrathin ZrO2 and HfO2 high-k dielectrics grown by room temperature ultraviolet ozone oxidation

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Dependence of charge trapping and tunneling on the silicon-nitride (Si3N4) thickness for tunnel barrier engineered nonvolatile memory applications

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Hafnium Oxide (HfO2) – A Multifunctional Oxide: A Review on the Prospect and Challenges of Hafnium Oxide in Resistive Switching and Ferroelectric Memories

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Review of Semiconductor Flash Memory Devices for Material and Process Issues

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Memristive Devices Based on Two-Dimensional Transition Metal Chalcogenides for Neuromorphic Computing

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Review on Non-Volatile Memory with High-k Dielectrics: Flash for Generation Beyond 32 nm

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Silicon doped hafnium oxide (HSO) and hafnium zirconium oxide (HZO) based FeFET: A material relation to device physics

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Two-Dimensional Materials for Brain-Inspired Computing Hardware

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Defect states and charge trapping characteristics of HfO2 films for high performance nonvolatile memory applications

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Retention Secured Nonlinear and Self-Rectifying Analog Charge Trap Memristor for Energy-Efficient Neuromorphic Hardware

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The effect of thermal treatment induced inter-diffusion at the interfaces on the charge trapping performance of HfO2/Al2O3 nanolaminate-based memory devices

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In situ electron holography study of charge distribution in high-κ charge-trapping memory

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A comprehensive review of advanced trends: from artificial synapses to neuromorphic systems with consideration of non-ideal effects

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Effects of Thermal Treatments on the Trapping Properties of HfO$_{2}$ Films for Charge Trap Memories

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E-Mode GaN MIS-HEMT Using Ferroelectric Charge Trap Gate Stack With Low Dynamic On-Resistance and High V th Stability by Field Plate Engineering

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Charge Trapping Analysis of Metal/Al2O3/SiO2/Si, Gate Stack for Emerging Embedded Memories

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Characterizing the Charge Trapping across Crystalline and Amorphous Si/SiO 2 /HfO 2 Stacks from First-Principle Calculations

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Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping

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Al2O3/HfO2Multilayer High‐k Dielectric Stacks for Charge Trapping Flash Memories

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Comparative Study of Device Performance and Reliability in Amorphous InGaZnO Thin-Film Transistors with Various High-k Gate Dielectrics

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Process Optimization and Device Characterization of Nonvolatile Charge Trap Memory Transistors Using In–Ga–ZnO Thin Films as Both Charge Trap and Active Channel Layers

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Charge-trapping characteristics of fluorinated thin ZrO2 film for nonvolatile memory applications

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Kelvin probe force gradient microscopy of charge dissipation in nano thin dielectric layers

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3D‐Transistor Array Based on Horizontally Suspended Silicon Nano‐bridges Grown via a Bottom‐Up Technique

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Structural Engineering of H0.5Z0.5O2‐Based Ferroelectric Tunneling Junction for Fast‐Speed and Low‐Power Artificial Synapses

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Challenges to Optimize Charge Trapping Non-Volatile Flash Memory Cells: A Case Study of HfO2/Al2O3 Nanolaminated Stacks

Spassov, D., & Paskaleva, A. (2023) · Nanomaterials · doi:10.3390/nano13172456 · Cited by 26

Transparent Flash Memory Using Single Ta2O5 Layer for Both Charge-Trapping and Tunneling Dielectrics

Hota, M. K., Alshammari, F. H., Salama, K. N., & Alshareef, H. N. (2017) · ACS Applied Materials & Interfaces · doi:10.1021/acsami.7b03078 · Cited by 26

A comparative study of charge trapping in HfO2/Al2O3 and ZrO2/Al2O3 based multilayered metal/high-k/oxide/Si structures

Spassov, D., Skeparovski, A., Paskaleva, A., & Novkovski, N. (2016) · Thin Solid Films · doi:10.1016/j.tsf.2016.02.064 · Cited by 25

Investigation on interface related charge trap and loss characteristics of high-k based trapping structures by electrostatic force microscopy

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Hole and electron trapping in HfO 2 /Al 2 O 3 nanolaminated stacks for emerging non-volatile flash memories

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Multilayer redox-based HfOx/Al2O3/TiO2 memristive structures for neuromorphic computing

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Preparation of Remote Plasma Atomic Layer-Deposited HfO2 Thin Films with High Charge Trapping Densities and Their Application in Nonvolatile Memory Devices

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Charge Trapping Memory Characteristics of p-Si/Ultrathin Al[sub 2]O[sub 3]∕(HfO[sub 2])[sub 0.8](Al[sub 2]O[sub 3])[sub 0.2]∕Al[sub 2]O[sub 3]/Metal Multilayer Structure

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Total Ionization Dose Effects on Charge-Trapping Memory With Al2O3/HfO2/Al2O3Trilayer Structure

Bi, J., Xu, Y., Xu, G., Wang, H., Chen, L., & Liu, M. (2017) · IEEE Transactions on Nuclear Science · doi:10.1109/tns.2017.2782215 · Cited by 21

Impacts of HfO 2 /ZnO Stack-Structured Charge-Trap Layers Controlled by Atomic Layer Deposition on Nonvolatile Memory Characteristics of In-Ga-Zn-O Channel Charge-Trap Memory Thin-Film Transistors

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A Gd-doped HfO 2 single film for a charge trapping memory device with a large memory window under a low voltage

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Fluorinated $\hbox{SrTiO}_{3}$ as Charge-Trapping Layer for Nonvolatile Memory Applications

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A Study on the Charge Trapping Characteristics of High-k Laminated Traps

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Energy-Efficient III–V Tunnel FET-Based Synaptic Device with Enhanced Charge Trapping Ability Utilizing Both Hot Hole and Hot Electron Injections for Analog Neuromorphic Computing

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Charge Storage and Reliability Characteristics of Nonvolatile Memory Capacitors with HfO2/Al2O3-Based Charge Trapping Layers

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A bi-stable nanoelectromechanical non-volatile memory based on van der Waals force

Soon, B. W., Ng, E. J., Qian, Y., Singh, N., Tsai, M. J., & Lee, C. (2013) · Applied Physics Letters · doi:10.1063/1.4817796 · Cited by 19

Tunneling oxide engineering for improving retention in nonvolatile charge-trapping memory with TaN/Al 2 O 3 /HfO 2 /SiO 2 /Al 2 O 3 /SiO 2 /Si structure

Song, Y. S., Jang, T., Min, K. K., Baek, M.-H., Yu, J., Kim, Y., Lee, J., & Park, B. (2020) · Japanese Journal of Applied Physics · doi:10.35848/1347-4065/ab8275 · Cited by 18

A Graphene Oxide Quantum Dots Embedded Charge Trapping Memory With Enhanced Memory Window and Data Retention

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The effect of gas composition on the properties of silicon oxynitride thin film prepared by low-pressure inductively coupled Ar/N2 plasma

Park, W., Han, J., Kim, J., & Moon, S. Y. (2022) · Thin Solid Films · doi:10.1016/j.tsf.2022.139629 · Cited by 18

Fully-transparent graphene charge-trap memory device with large memory window and long-term retention

Lee, S., Lee, Y., Kim, S. M., & Song, E. B. (2017) · Carbon · doi:10.1016/j.carbon.2017.10.089 · Cited by 17

Progress of High-k Dielectrics Applicable to SONOS-Type Nonvolatile Semiconductor Memories

Tang, Z., Liu, Z. G., & Zhu, X. (2010) · Transactions on Electrical and Electronic Materials · doi:10.4313/teem.2010.11.4.155 · Cited by 17

Improvement of Memory Window of Silicon Channel Hf₀.₅Zr₀.₅O₂ FeFET by Inserting Al₂O₃/HfO₂/Al₂O₃ Top Interlayer

Han, R., Hu, T., Yang, J., Bai, M., Ding, Y., Shao, X., Dai, S., Sun, X., Chai, J., Xu, H., et al. (2024) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2024.3489595 · Cited by 16

Design and Fabrication of Ta$_{2}$O $_{5}$ Stacks for Discrete Multibit Memory Application

Zhu, H., Yuan, H., Li, H., Richter, C. A., Kirillov, O. A., Ioannou, D. E., & Li, Q. (2013) · IEEE Transactions on Nanotechnology · doi:10.1109/tnano.2013.2281817 · Cited by 16

ZnO/NiO Diode-Based Charge-Trapping Layer for Flash Memory Featuring Low-Voltage Operation

Sun, C.-E., Chen, C.-Y., Chu, K.-L., Shen, Y.-S., Lin, C.-C., & Wu, Y. (2015) · ACS Applied Materials & Interfaces · doi:10.1021/am507535c · Cited by 16

Highly Reliable Charge Trap‐Type Organic Non‐Volatile Memory Device Using Advanced Band‐Engineered Organic‐Inorganic Hybrid Dielectric Stacks

Kim, M. J., Lee, C., Shin, E. J., Lee, T. I., Kim, S., Jeong, J., Choi, J., Hwang, W. S., Im, S. G., & Cho, B. J. (2021) · Advanced Functional Materials · doi:10.1002/adfm.202103291 · Cited by 15

Nitrided $\hbox{La}_{2}\hbox{O}_{3}$ as Charge-Trapping Layer for Nonvolatile Memory Applications

Huang, X., Sin, J. K. O., & Lai, P. T. (2012) · IEEE Transactions on Device and Materials Reliability · doi:10.1109/tdmr.2011.2182197 · Cited by 15

Nonvolatile Poly-Si TFT Charge-Trap Flash Memory With Engineered Tunnel Barrier

You, H.-W., & Cho, W.-J. (2011) · IEEE Electron Device Letters · doi:10.1109/led.2011.2177060 · Cited by 15

Flash memory based on solution processed hafnium dioxide charge trapping layer

Zhuang, J., Han, S., Zhou, Y., & Roy, V. A. L. (2014) · Journal of Materials Chemistry C · doi:10.1039/c4tc00010b · Cited by 15

Electron and Hole Trapping Characteristics of a Low-Temperature Atomic Layer-Deposited HfO 2 Charge-Trap Layer for Charge-Trap Flash Memory

Noh, T., Han, J., Jeong, B., Park, J., Kim, K., Lee, M., Kim, B., Choi, H., & Yoon, T. (2025) · ACS Applied Electronic Materials · doi:10.1021/acsaelm.4c02274 · Cited by 14

Bipolar plasticity of the synapse transistors based on IGZO channel with HfOxNy/HfO2/HfOxNy sandwich gate dielectrics

Yang, W., & Jiang, R. (2019) · Applied Physics Letters · doi:10.1063/1.5100128 · Cited by 14

Hysteresis in Lanthanide Aluminum Oxides Observed by Fast Pulse CV Measurement

Zhao, C., Zhao, C., Lu, Q., Yan, X., Taylor, S., & Chalker, P. R. (2014) · Materials · doi:10.3390/ma7106965 · Cited by 13

Radiation Tolerance and Charge Trapping Enhancement of ALD HfO2/Al2O3 Nanolaminated Dielectrics

Spassov, D., Paskaleva, A., Guziewicz, E., Davidović, V. S., Stanković, S., Djoric-Veljkovic, S., Ivanov, T., Stanchev, T., & Stojadinović, N. (2021) · Materials · doi:10.3390/ma14040849 · Cited by 13

Improved Charge-Trapping Characteristics of ZrO 2 by Al Doping for Nonvolatile Memory Applications

Huang, X., Shi, R. P., Sin, J. K. O., & Lai, P. T. (2015) · IEEE Transactions on Device and Materials Reliability · doi:10.1109/tdmr.2015.2508153 · Cited by 13

Simulation Study of the Trapping Properties of ${\rm HfO}_{2}$ -Based Charge-Trap Memory Cells

Driussi, F., Spiga, S., Lamperti, A., Congedo, G., & Gambi, A. (2014) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2014.2316374 · Cited by 13

Trap‐Assisted Memristive Switching in HfO2‐Based Devices Studied by In Situ Soft and Hard X‐Ray Photoelectron Spectroscopy

Zahari, F., Marquardt, R., Kalläne, M., Gronenberg, O., Schlueter, C., Matveyev, Y., Haberfehlner, G., Diekmann, F., Nierhauve, A., Buck, J., et al. (2023) · Advanced Electronic Materials · doi:10.1002/aelm.202201226 · Cited by 12

Multilevel characteristics and operating mechanisms of nonvolatile memory devices based on a floating gate of graphene oxide sheets sandwiched between two polystyrene layers

Kim, Y. N., Lee, N. H., Yun, D. Y., & Kim, T. W. (2015) · Organic Electronics · doi:10.1016/j.orgel.2015.06.028 · Cited by 12

Charge Trapping Layer Enabled Normally-Off β-Ga2O3 MOSFET

He, M., Wen, K., Deng, C., Li, M., Cui, Y., Wang, Q., Yu, H., & Ang, K. (2023) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2023.3267758 · Cited by 11

Nonvolatile flash memory device with ferroelectric blocking layer via in situ ALD process

Kim, D., Song, C., Heo, S. J., Pyo, G., Kim, D., Lee, J. H., Park, K., Lee, S., Kwon, H., & Jang, J. E. (2023) · Applied Physics Letters · doi:10.1063/5.0123608 · Cited by 11

2D materials-based crossbar array for neuromorphic computing hardware

Lee, H. J., Park, S., Kim, J., Park, M. H., Kim, J., Lim, J. A., & Jang, H. W. (2024) · Neuromorphic Computing and Engineering · doi:10.1088/2634-4386/ad7755 · Cited by 11

Light-erasable embedded charge-trapping memory based on MoS2 for system-on-panel applications

He, L., Zhu, H., Jing, X., Liu, H., Nie, X., Chen, L., Sun, Q., Yang, X., & Zhang, D. W. (2017) · Applied Physics Letters · doi:10.1063/1.5000552 · Cited by 11

Effects of Interfacial Fluorination on Performance Enhancement of High-k-Based Charge Trap Flash Memory

Wang, C., Huo, Z., Liu, Z., Liu, Y., Cui, Y., Wang, Y., Li, F., & Liu, M. (2013) · Japanese Journal of Applied Physics · doi:10.7567/jjap.52.070201 · Cited by 11

Effect of charge trap layer thickness on the charge spreading behavior within a few seconds in 3D charge trap flash memory

Choi, B., Lee, J., Yoon, J., Jeon, M., Lee, Y., Han, J., Lee, J., Park, J., Kim, Y., Kim, D. M., et al. (2018) · Semiconductor Science and Technology · doi:10.1088/1361-6641/aade29 · Cited by 11

Toward Low-Power Flash Memory: Prospect of Adopting Crystalline Oxide as Charge Trapping Layer

Chen, K.-Y., Teng, S.-C., Chang, H.-H., & Wu, Y. (2016) · IEEE Journal of the Electron Devices Society · doi:10.1109/jeds.2016.2557966 · Cited by 11

Performance Enhancement for Charge Trapping Memory by Using Al2O3/HfO2/Al2O3Tri-Layer High-κ Dielectrics and High Work Function Metal Gate

Hou, Z., Wu, Z., & Yin, H. (2018) · ECS Journal of Solid State Science and Technology · doi:10.1149/2.0261806jss · Cited by 11

Quantification of Interfacial Charges in Multilayered Nanocapacitors by Operando Electron Holography

Zhang, L., Raza, M. H., Wu, R., Gruel, K., Dubourdieu, C., Hÿtch, M., & Gatel, C. (2024) · Advanced Materials · doi:10.1002/adma.202413691 · Cited by 10

Synergic Impacts of CF 4 Plasma Treatment and Post-thermal Annealing on the Nonvolatile Memory Performance of Charge-Trap-Assisted Memory Thin-Film Transistors Using Al–HfO 2 Charge Trap and In–Ga–Zn–O Active Channel Layers

Kim, J., & Yoon, S. (2022) · ACS Applied Electronic Materials · doi:10.1021/acsaelm.2c00009 · Cited by 10

Evaluation of the effects of thermal annealing temperature and high-k dielectrics on amorphous InGaZnO thin films by using pseudo-MOS transistors

Lee, S.-W., & Cho, W.-J. (2012) · Journal of the Korean Physical Society · doi:10.3938/jkps.60.1317 · Cited by 10

Impact of the Nonlinear Dielectric Hysteresis Properties of a Charge Trap Layer in a Novel Hybrid High-Speed and Low-Power Ferroelectric or Antiferroelectric HSO/HZO Boosted Charge Trap Memory

Ali, T., Mertens, K., Olivo, R. R., Rudolph, M., Oehler, S., Kühnel, K., Lehninger, D., Muller, F., Hoffmann, R., Schramm, P., et al. (2021) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2021.3049758 · Cited by 10

Effects of high-temperature O 2 annealing on Al 2 O 3 blocking layer and Al 2 O 3 /Si 3 N 4 interface for MANOS structures

Xu, Z., Zhu, C., Huo, Z., Zhao, S., & Liu, M. (2012) · Journal of Physics D Applied Physics · doi:10.1088/0022-3727/45/18/185103 · Cited by 10

Improvement of Charge Injection by Using Separated SiN as Charge Trapping Layer in MONOS Charge Trap Flash Memory

Ji, H., Wei, Y., Ma, P., & Jiang, R. (2017) · IEEE Journal of the Electron Devices Society · doi:10.1109/jeds.2017.2771956 · Cited by 10

Memory Devices with HfO2 Charge-Trapping and TiO2 Channel Layers: Fabrication via Remote and Direct Plasma Atomic Layer Deposition and Comparative Performance Evaluation

Hwang, I., Kim, J., Lee, J., Jung, Y., & Yoon, C. (2025) · Materials · doi:10.3390/ma18050948 · Cited by 9

Performance-improved nonvolatile memory with aluminum nanocrystals embedded in Al2O3 for high temperature applications

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Deep electron traps in HfO2-based metal-oxide-semiconductor capacitors

Salomone, L. S., Lipovetzky, J., Carbonetto, S., Inza, M. A. G., Redin, E. G., Campabadal, F., & Faigón, A. (2016) · Thin Solid Films · doi:10.1016/j.tsf.2016.01.007 · Cited by 9

Field-driven modulating of In-Sn-O synaptic transistors with a precisely controlled weight update

Liu, W., Huang, Y., Jin, C., Zhou, B., Yu, J., Liang, Y., Sun, Q., Sun, J., & Yang, J. (2021) · Applied Materials Today · doi:10.1016/j.apmt.2021.101024 · Cited by 9

Charge trapping during constant current stress in Hf-doped Ta2O5 films sputtered on nitrided Si

Novkovski, N., & Atanassova, E. (2010) · Thin Solid Films · doi:10.1016/j.tsf.2010.10.063 · Cited by 9

Advancements in Complementary Metal-Oxide Semiconductor-Compatible Tunnel Barrier Engineered Charge-Trapping Synaptic Transistors for Bio-Inspired Neural Networks in Harsh Environments

Lee, D.-H., Park, H., & Cho, W.-J. (2023) · Biomimetics · doi:10.3390/biomimetics8060506 · Cited by 8

Research on c-HfO2 (0 0 1)/α-Al2O3 (1 -1 0 2) interface in CTM devices based on first principle theory

Lu, W., Dai, Y., Wang, F., Yang, F., Ma, C., Zhang, X., & Jiang, X. (2017) · AIP Advances · doi:10.1063/1.5001904 · Cited by 8

High-$\kappa~{\rm Eu}_{2}{\rm O}_{3}$ and ${\rm Y}_{2}{\rm O}_{3}$ Poly-Si Thin-Film Transistor Nonvolatile Memory Devices

Pan, T.-M., Yen, L.-C., Huang, S.-H., Lo, C.-T., & Chao, T. (2013) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2013.2261511 · Cited by 8

Nb-Doped $\hbox{La}_{2}\hbox{O}_{3} $ as Charge-Trapping Layer for Nonvolatile Memory Applications

Shi, R. P., Huang, X., Leung, C. H., Sin, J. K. O., & Lai, P. T. (2014) · IEEE Transactions on Device and Materials Reliability · doi:10.1109/tdmr.2014.2376514 · Cited by 8

Nb-doped Ga 2 O 3 as charge-trapping layer for nonvolatile memory applications

Shi, R. P., Huang, X., Sin, J. K. O., & Lai, P. T. (2016) · Microelectronics Reliability · doi:10.1016/j.microrel.2016.07.148 · Cited by 8

Nanoscale electrical properties of ZnO nanorods grown by chemical bath deposition

Chen, S., Yu, C., & Chien, C. (2017) · Microscopy Research and Technique · doi:10.1002/jemt.22848 · Cited by 7

Study of γ-ray radiation influence on SiO2/HfO2/Al2O3/HfO2/Al2O3 memory capacitor by C–V and DLTS

Cao, S., Ke, X., Ming, S.-T., Wang, D., Li, T., Liu, B., Ma, Y., Li, Y., Yang, Z., Gong, M., et al. (2019) · Journal of Materials Science Materials in Electronics · doi:10.1007/s10854-019-01450-6 · Cited by 7

Characterizations of MoTiO5 flash memory devices with post-annealing

Kao, C. H., Chen, H., Chen, S. Z., Chen, Y. J., & Chu, Y. C. (2014) · Thin Solid Films · doi:10.1016/j.tsf.2014.02.032 · Cited by 7

Charge-trapping MOS memory structure using anodic alumina charging medium

Hourdakis, E., & Nassiopoulou, A. G. (2011) · Microelectronic Engineering · doi:10.1016/j.mee.2011.03.015 · Cited by 7

Design and analysis of Si–Ag–graphene–HfO2 heterojunction based ultraviolet photodetector

Jangra, R., Mishra, S. K., & Sharma, A. K. (2024) · Journal of Optics · doi:10.1007/s12596-024-02242-w · Cited by 6

Investigation of Tunneling Current in $\hbox{SiO}_{2}/ \hbox{HfO}_{2}$ Gate Stacks for Flash Memory Applications

Chakrabarti, B., Kang, H.-S., Brennan, B., Park, T. J., Cantley, K. D., Pirkle, A. R., McDonnell, S. J., Kim, J., Wallace, R. M., & Vogel, E. M. (2011) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2011.2170198 · Cited by 6

Study of Memory Performance and Electrical Characteristics for Metal Nanocrystal Memories

Cheng, P.-H., Huang, S., & Wu, F. (2011) · IEEE Transactions on Nanotechnology · doi:10.1109/tnano.2011.2169278 · Cited by 6

Impacts of annealing temperature on charge trapping performance in Zr0.5Hf0.5O2 for nonvolatile memory

Zhao, J., Yan, X., Li, Y., Yang, T., Jia, X., Zhou, Z., & Zhang, Y. Y. (2016) · Journal of Applied Physics · doi:10.1063/1.4964695 · Cited by 6

Colloidal metal oxides in electronics and optoelectronics

Song, J. (2019) · Elsevier eBooks · doi:10.1016/b978-0-12-813357-6.00011-5 · Cited by 6

Improved Memory Window and Retention of Silicon Channel Hf0.5Zr0.5O2 FeFET by Using SiO2/HfO2/SiO2 Gate Side Interlayer

Han, R., Yang, J. R., Hu, T., Bai, M., Ding, Y., Shao, X., Dai, S., Sun, X., Chai, J., Xu, H., et al. (2025) · IEEE International Reliability Physics Symposium proceedings · doi:10.1109/irps48204.2025.10983393 · Cited by 5

2D materials-based flash memory device: mechanism, structure, application

Yu, X., Xu, L., Shi, W., Meng, X., Huang, X., Peng, Z., Tong, L., Sun, H., Miao, X., & Ye, L. (2025) · Materials Horizons · doi:10.1039/d5mh00803d · Cited by 5

Integration of Quantum Dot Light-Emitting Diodes and Charge Trap Thin-Film Transistor Arrays for Memory-In-Pixel Applications

Park, S., Kim, E. A., Ju, G., Choi, S., Jeong, H. S., Han, J., Ahn, D., Kim, J., Shim, M., Yang, H., et al. (2025) · ACS Applied Materials & Interfaces · doi:10.1021/acsami.5c13831 · Cited by 5

Investigation of heavy ion irradiation effects on a charge trapping memory capacitor by C–V measurement

Chen, Q., Yang, X., Li, Z., Bi, J., Xi, K., Zhang, Z., Zhai, P., Sun, Y.-M., & Liu, J. (2022) · Chinese Physics B · doi:10.1088/1674-1056/acae78 · Cited by 5

Acoustic spectroscopy and electrical characterization of Si/NAOS-SiO2/HfO2 structures

Bury, P., Matsumoto, T., Bellan, I., Janek, M., & Kobayashi, H. (2012) · Applied Surface Science · doi:10.1016/j.apsusc.2012.10.103 · Cited by 5

Fabrication and characterization of HfxAl(1-x)Oy ceramic targets and thin films by RF sputtering

Hong, I. P., He, R., & Bark, C. W. (2024) · Ceramics International · doi:10.1016/j.ceramint.2024.05.401 · Cited by 5

Energy band alignments of Al2O3–HfO2/Al2O3 nanolaminates–SiO2–p-type Si structures

Rifai, A., Maikap, S., & Nakamura, Y. (2015) · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · doi:10.1116/1.4931027 · Cited by 5

Investigating the Charge Trapping Behavior and Enhancing the Memory Window of Silicon Channel Hf0.5Zr0.5O2 FeFET With SiO2/HfO2/SiO2 Gate Side Interlayer

Han, R., Yang, J. N., Hu, T., Bai, M., Ding, Y., Shao, X., Jia, X., Dai, S., Sun, X., Chai, J., et al. (2025) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2025.3584325 · Cited by 4

Role of ultra-thin MgO tunneling and blocking layers in HfO2-based charge trap flash memory

Gorthy, A., Gogi, V. K., Srinivasan, R., Mayersky, J., Leedy, K. D., & Jha, R. (2026) · Memories - Materials Devices Circuits and Systems · doi:10.1016/j.memori.2026.100147

Electrical properties of HfO 2 charge trap flash memory with SiO 2/HfO 2/Al 2O 3 engineered tunnel layer

Oh, S.-M., You, H.-W., Kim, K.-S., Lee, Y.-H., & Cho, W.-J. (2010) · Cited by 1

Charge Storage and Reliability Characteristics of Nonvolatile Memory Capacitors with HfO2/Al2O3-Based Charge Trapping Layers

Spassov, D., Paskaleva, A., Guziewicz, E., Wozniak, W., Stanchev, T., Ivanov, T., Wojewoda-Budka, J., & Janusz-Skuza, M. (2022) · Materials · doi:10.3390/ma15186285 · Cited by 19

The Study of Charge Trapping in Mahas Memory Structure with Various HfO2 Trap Layer Thicknesses

Na, H., Oh, J., Lee, K., & Sohn, H. (2014) · ECS Meeting Abstracts · doi:10.1149/ma2014-02/44/2117

Electron and Hole Trapping Characteristics of a Low-Temperature Atomic Layer-Deposited HfO 2 Charge-Trap Layer for Charge-Trap Flash Memory

Noh, T., Han, J., Jeong, B., Park, J., Kim, K., Lee, M., Kim, B., Choi, H., & Yoon, T. (2025) · ACS Applied Electronic Materials · doi:10.1021/acsaelm.4c02274 · Cited by 14