Thermal conductivity and dynamic heat capacity across the metal-insulator transition in thin film VO2

Oh, Dong-Wook; Ko, Changhyun; Ramanathan, Shriram; Cahill, David G.

doi:10.1063/1.3394016

Cited by 239Transition Metal Oxide NanomaterialsThermal properties of materialsThermography and Photoacoustic Techniques

Thermal conductivity and dynamic heat capacity across the metal-insulator transition in thin film VO2

Oh, Dong-Wook, Ko, Changhyun, Ramanathan, Shriram, Cahill, David G.·2010·Applied Physics Letters

DOI 10.1063/1.3394016

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Abstract

The thermal properties of VO2 thin films, 90–440 nm thick, are measured by time-domain thermoreflectance (TDTR) across the metal-insulator transition (MIT). The thermal conductivity increases by as much as 60% in the metallic phase; this increase in conductivity is in good agreement with the expected electronic contribution to the thermal conductivity. For relatively thick layers, TDTR data are sensitive to the dynamic heat capacity and show a pronounced peak near the MIT temperature created by a contribution to the enthalpy from periodic transformations at the 10 MHz frequency of the thermal waves used in the experiment. The dynamic heat capacity increases as the amplitude ΔT of the thermal waves becomes comparable to the width of the MIT and reaches ≈30% of the bulk latent heat for ΔT≈1.6 K.

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Over the past two decades, TDTR has emerged and evolved as a reliable, powerful, and versatile technique to measure thermal properties of a wide range of bulk and thin film materials and their interfaces.
“Over the past two decades, ultrafast laser-based time-domain thermoreflectance (TDTR) has emerged and evolved as a reliable, powerful, and versatile technique to measure the thermal properties of a wide range of bulk and thin film materials and their interfaces.”
From Tutorial: Time-domain thermoreflectance (TDTR) for thermal property characterization of bulk and thin film materials (2018) · cites this paper as [28]

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Authors: Oh, D.-W., Ko, C., Ramanathan, S., & Cahill, D. G.
Affiliations: University of Illinois Urbana-Champaign (US)
Harvard University (US)
ORCID: Ko, Changhyun
Ramanathan, Shriram
Cahill, David G.
Venue: Applied Physics Letters
Publisher: AIP Publishing
Published: 2010-04-12
Volume: 96
Issue: 15
ISSN: 0003-6951 (ISSN-L)
1077-3118
DOI: 10.1063/1.3394016
OpenAlex: W2011656361
Cited by: 239
References: 18
Citations by year: 2026: 12 · 2025: 25 · 2024: 19 · 2023: 18 · 2022: 14 · 2021: 19 · 2020: 19 · 2019: 19 · 2018: 19 · 2017: 17 · 2016: 9 · 2015: 14 · 2014: 10 · 2013: 8 · 2012: 7
FWCI: 6.62
Type: journal article
Language: en
Open access: closed
Locations: Applied Physics Letters (publishedVersion)
Topics: Physical Sciences › Materials Science › Polymers and Plastics › Transition Metal Oxide Nanomaterials
Physical Sciences › Materials Science › Materials Chemistry › Thermal properties of materials
Physical Sciences › Engineering › Mechanics of Materials › Thermography and Photoacoustic Techniques
Keywords: vanadium dioxide, metal-insulator transition, thin films, thermal conductivity, dynamic heat capacity, time-domain thermoreflectance, electronic thermal conductivity, latent heat, phase transformation

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Thermal conductivity and dynamic heat capacity across the metal-insulator transition in thin film VO2

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