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O-vacancy as the origin of negative bias illumination stress instability in amorphous In–Ga–Zn–O thin film transistors
Open accessAbstract
We find that O-vacancy (VO) acts as a hole trap and plays a role in negative bias illumination stress instability in amorphous In–Ga–Zn–O thin film transistors. Photoexcited holes drift toward the channel/dielectric interface due to small potential barriers and can be captured by VO in the dielectrics. While some of VO+2 defects are very stable at room temperature, their original deep states are recovered via electron capture upon annealing. We also find that VO+2 can diffuse in amorphous phase, inducing hole accumulation near the interface under negative gate bias.
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Cites
Projector augmented-wave method
Blöchl, P. E. (1994) · Physical Review B · doi:10.1103/physrevb.50.17953 · Cited by 92,732
From ultrasoft pseudopotentials to the projector augmented-wave method
Kresse, G., & Joubert, D. (1999) · Physical Review B · doi:10.1103/physrevb.59.1758 · Cited by 85,307
Cited by
Review of recent developments in amorphous oxide semiconductor thin-film transistor devices
Park, J. S., Maeng, W.-J., Kim, H.-S., & Park, J.-S. (2012) · Thin Solid Films · doi:10.1016/j.tsf.2011.07.018 · Cited by 1,074
Jeon, S., Ahn, S.-E., Song, I., Kim, C. J., Chung, U.-I., Lee, E., Yoo, I., Nathan, A., Lee, S., Ghaffarzadeh, K., et al. (2012) · Nature Materials · doi:10.1038/nmat3256 · Cited by 577
Enriched Surface Oxygen Vacancies of Photoanodes by Photoetching with Enhanced Charge Separation
Feng, S., Wang, T., Liu, B., Hu, C., Li, L., Zhao, Z., & Gong, J. (2020) · Angewandte Chemie International Edition · doi:10.1002/anie.201913295 · Cited by 257
Metadata
- Authors
- Ryu, B., Noh, H.-K., Choi, E.-A., & Chang, K. J.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 2010-07-12
- Volume
- 97
- Issue
- 2
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W2038313135
- Cited by
- 445
- References
- 2
- FWCI
- 21.68
- Type
- journal article
- Language
- en
- Open access
- green
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- Ryu, B., Noh, H.-K., Choi, E.-A., & Chang, K. J. (2010). O-vacancy as the origin of negative bias illumination stress instability in amorphous In–Ga–Zn–O thin film transistors. Applied Physics Letters. https://doi.org/10.1063/1.3464964
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