The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.
Optoelectronic measurement of semiconductor surfaces and interfaces with femtosecond optics
Abstract
The basic concepts and preliminary applications of optically induced electromagnetic radiation from semiconductor surfaces and interfaces by using femtosecond optics are discussed. This submillimeter-wave radiation provides a novel optoelectronic technique to study semiconductor electronic surface and interface properties with a contactless approach. The amplitude and phase of the electromagnetic radiation from the semiconductor surfaces depend on carrier mobility, impurity doping concentration, and strength and polarity of the static internal field. A large selection of bulk, epitaxial layer and superlattice samples from III-V, II-VI and group-IV semiconductors has been tested. The orientation and strength of the static built-in fields of a wide range of semiconductor surfaces, such as surface depletion, metal/semiconductor Schottky, p-n junction and strain-induced piezoelectric fields, can be determined and estimated.
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Citations
Cites
Subpicosecond photoconducting dipole antennas
Smith, P. R., Auston, D. H., & Nuss, M. C. (1988) · IEEE Journal of Quantum Electronics · doi:10.1109/3.121 · Cited by 805
Self-citation
Cited by
Terahertz time-domain spectroscopy
Koch, M., Mittleman, D. M., Ornik, J., & Castro-Camus, E. (2023) · Nature Reviews Methods Primers · doi:10.1038/s43586-023-00232-z · Cited by 410
High-intensity terahertz radiation from a microstructured large-area photoconductor
Dreyhaupt, A., Winnerl, S., Dekorsy, T., & Helm, M. (2005) · Applied Physics Letters · doi:10.1063/1.1891304 · Cited by 353
Study of terahertz radiation from InAs and InSb
Gu, P., Tani, M., Kono, S., Sakai, K., & Zhang, X.-C. (2002) · Journal of Applied Physics · doi:10.1063/1.1465507 · Cited by 326
Self-citationTerahertz radiation from InAs induced by carrier diffusion and drift
Liu, K., Xu, J., Yuan, T., & Zhang, X.-C. (2006) · Physical Review B · doi:10.1103/physrevb.73.155330 · Cited by 181
Self-citationTerahertz Pulse Generation from GaAs Metasurfaces
Hale, L. L., Jung, H., Gennaro, S. D., Briscoe, J., Harris, C. T., Luk, T. S., Addamane, S. J., Reno, J. L., Brener, I., & Mitrofanov, O. (2022) · ACS Photonics · doi:10.1021/acsphotonics.1c01908 · Cited by 50
Metadata
- Authors
- Zhang, X.-C., & Auston, D. H.
- Venue
- Journal of Applied Physics
- Publisher
- AIP Publishing
- Published
- 1992-01-01
- Volume
- 71
- Issue
- 1
- Pages
- 326-338
- ISSN
- 0021-8979 (ISSN-L)
- 1089-7550
- OpenAlex
- W2072821301
- Cited by
- 429
- References
- 1
- FWCI
- 13.06
- Type
- journal article
- Language
- en
- Open access
- closed
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- Zhang, X.-C., & Auston, D. H. (1992). Optoelectronic measurement of semiconductor surfaces and interfaces with femtosecond optics. Journal of Applied Physics. https://doi.org/10.1063/1.350710
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Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
