Cited by 326Terahertz technology and applicationsLaser-Matter Interactions and ApplicationsAdvanced Semiconductor Detectors and Materials

Study of terahertz radiation from InAs and InSb

Gu, Ping, Tani, Masahiko, Kono, Shunsuke, Sakai, Kiyomi, Zhang, X.-C.·2002·Journal of Applied Physics

Abstract

Terahertz radiation from InSb and InAS, which are typical narrow band-gap semiconductors, was investigated using time-resolved THz emission measurements. When we compared between the polarity of the THz waveforms of these narrow band-gap semiconductors with that of InP, which is a wide bandgap semiconductor, we concluded that the ultrafast buildup of the photo-Dember field is the main mechanism for the emission of THz radiation in both InAs and InSb. The emission efficiency of InSb is approximately one-hundredth of that of InAs, although the electron mobility in InSb is higher than in InAs. Wavelength-dependent measurements implied that the anomalously low THz emission efficiency of InSb might be due to a reduction in transient mobility resulting from the scattering of electrons into the low-mobility L valley.

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Registry

Crossref · 10.1063/1.1465507

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  • In longitudinal photo-Dember THz emitters such as InAs crystals, excited electrons near the crystal surface diffuse more quickly into the bulk than holes, creating currents normal to the surface.

    “In longitudinal photo-Dember THz emitters such as InAs crystals32,33, excited electrons near the crystal surface diffuse more quickly into the bulk than the corresponding holes, creating currents in the direction normal to the surface (i.e., out-of-plane electric dipole).”

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Authors
Gu, P., Tani, M., Kono, S., Sakai, K., & Zhang, X.-C.
Affiliations
  • Kansai Advanced Research Center, Communications Research Laboratory 588-2 Iwaoka, Kobe 651-2492, Japan
  • Rensselaer Polytechnic Institute (US)
Venue
Journal of Applied Physics
Published
2002-05-01
Volume
91
Issue
9
Pages
5533-5537
ISSN
  • 0021-8979 (ISSN-L)
  • 1089-7550
OpenAlex
W1965561066
Cited by
326
References
10
Citations by year
2026: 8 · 2025: 6 · 2024: 18 · 2023: 10 · 2022: 10 · 2021: 17 · 2020: 14 · 2019: 12 · 2018: 17 · 2017: 23 · 2016: 7 · 2015: 16 · 2014: 13 · 2013: 11 · 2012: 9
FWCI
10.15
Type
journal article
Language
en
Open access
closed
Locations
Journal of Applied Physics (publishedVersion)
Funders
Japan Science and Technology Agency
Topics
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Terahertz technology and applications
  • Physical Sciences › Physics and Astronomy › Atomic and Molecular Physics, and Optics › Laser-Matter Interactions and Applications
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced Semiconductor Detectors and Materials
Keywords
terahertz radiation, InAs, indium antimonide, narrow-gap semiconductors, photo-Dember effect, electron scattering, L valley, emission efficiency

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