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Ferroelectricity in hafnium oxide thin films
Abstract
We report that crystalline phases with ferroelectric behavior can be formed in thin films of SiO2 doped hafnium oxide. Films with a thickness of 10 nm and with less than 4 mol. % of SiO2 crystallize in a monoclinic/tetragonal phase mixture. We observed that the formation of the monoclinic phase is inhibited if crystallization occurs under mechanical encapsulation and an orthorhombic phase is obtained. This phase shows a distinct piezoelectric response, while polarization measurements exhibit a remanent polarization above 10 μC/cm2 at a coercive field of 1 MV/cm, suggesting that this phase is ferroelectric. Ferroelectric hafnium oxide is ideally suited for ferroelectric field effect transistors and capacitors due to its excellent compatibility to silicon technology.
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Citations
Cited by
In-memory computing with resistive switching devices
Ielmini, D., & Wong, H.-S. P. (2018) · Nature Electronics · doi:10.1038/s41928-018-0092-2 · Cited by 2,298
“1g relies on the polarization switching in a ferroelectric material, such as a perovskite material [13], or doped-HfO2 [34].”
BackgroundResistive switching materials for information processing
Wang, Z., Wu, H., Burr, G. W., Hwang, C. S., Wang, K. L., Xia, Q., & Yang, J. J. (2020) · Nature Reviews Materials · doi:10.1038/s41578-019-0159-3 · Cited by 1,214
Physical Mechanisms behind the Field‐Cycling Behavior of HfO2‐Based Ferroelectric Capacitors
Pešić, M., Fengler, F. P. G., Larcher, L., Padovani, A., Schenk, T., Grimley, E. D., Sang, X., LeBeau, J. M., Slesazeck, S., Schroeder, U., et al. (2016) · Advanced Functional Materials · doi:10.1002/adfm.201600590 · Cited by 964
Ferroelectric Analog Synaptic Transistors
Kim, M.-K., & Lee, J.-S. (2019) · Nano Letters · doi:10.1021/acs.nanolett.9b00180 · Cited by 594
A rhombohedral ferroelectric phase in epitaxially strained Hf0.5Zr0.5O2 thin films
Wei, Y., Nukala, P., Salverda, M., Matzen, S., Zhao, H. J., Momand, J., Everhardt, A. S., Agnus, G., Blake, G. R., Lecoeur, P., et al. (2018) · Nature Materials · doi:10.1038/s41563-018-0196-0 · Cited by 587
Metadata
- Authors
- Böscke, T. S., Müller, J., Bräuhaus, D., Schröder, U., & Böttger, U.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 2011-09-05
- Volume
- 99
- Issue
- 10
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W1625170149
- Cited by
- 2,832
- References
- 0
- FWCI
- 14.04
- Type
- journal article
- Language
- en
- Open access
- closed
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- Böscke, T. S., Müller, J., Bräuhaus, D., Schröder, U., & Böttger, U. (2011). Ferroelectricity in hafnium oxide thin films. Applied Physics Letters. https://doi.org/10.1063/1.3634052
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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