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Cited by 267

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The quasi-free-standing nature of graphene on H-saturated SiC(0001)

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Speck, F., Jobst, J., Fromm, F., Ostler, M., Waldmann, D., Hundhausen, M., Weber, H. B., Seyller, Th.·2011·Applied Physics Letters

Abstract

We report on an investigation of quasi-free-standing graphene on 6H-SiC(0001) which was prepared by intercalation of hydrogen under the buffer layer. Using infrared absorption spectroscopy, we prove that the SiC(0001) surface is saturated with hydrogen. Raman spectra demonstrate the conversion of the buffer layer into graphene which exhibits a slight tensile strain and short range defects. The layers are hole doped (p = 5.0 − 6.5 × 1012 cm−2) with a carrier mobility of 3100 cm2/Vs at room temperature. Compared to graphene on the buffer layer, a strongly reduced temperature dependence of the mobility is observed for graphene on H-terminated SiC(0001) which justifies the term “quasi-free-standing.”

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Metadata

Authors
Speck, F., Jobst, J., Fromm, F., Ostler, M., Waldmann, D., Hundhausen, M., Weber, H. B., & Seyller, T.
Venue
Applied Physics Letters
Published
2011-09-19
Volume
99
Issue
12
ISSN
  • 0003-6951 (ISSN-L)
  • 1077-3118
OpenAlex
W2006640878
Cited by
267
References
22
FWCI
15.49
Type
journal article
Language
en
Open access
green

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CoChat. (2026). Citation check: The quasi-free-standing nature of graphene on H-saturated SiC(0001). https://app.cochat.ai/papers/10.1063/1.3643034
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Speck, F., Jobst, J., Fromm, F., Ostler, M., Waldmann, D., Hundhausen, M., Weber, H. B., & Seyller, T. (2011). The quasi-free-standing nature of graphene on H-saturated SiC(0001). Applied Physics Letters. https://doi.org/10.1063/1.3643034

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