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The quasi-free-standing nature of graphene on H-saturated SiC(0001)
Open accessAbstract
We report on an investigation of quasi-free-standing graphene on 6H-SiC(0001) which was prepared by intercalation of hydrogen under the buffer layer. Using infrared absorption spectroscopy, we prove that the SiC(0001) surface is saturated with hydrogen. Raman spectra demonstrate the conversion of the buffer layer into graphene which exhibits a slight tensile strain and short range defects. The layers are hole doped (p = 5.0 − 6.5 × 1012 cm−2) with a carrier mobility of 3100 cm2/Vs at room temperature. Compared to graphene on the buffer layer, a strongly reduced temperature dependence of the mobility is observed for graphene on H-terminated SiC(0001) which justifies the term “quasi-free-standing.”
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Cites
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Electronic Confinement and Coherence in Patterned Epitaxial Graphene
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Self-citationSpatially Resolved Raman Spectroscopy of Single- and Few-Layer Graphene
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Cited by
Surface chemistry and catalysis confined under two-dimensional materials
Fu, Q., & Bao, X. (2017) · Chemical Society Reviews · doi:10.1039/c6cs00424e · Cited by 532
Metadata
- Authors
- Speck, F., Jobst, J., Fromm, F., Ostler, M., Waldmann, D., Hundhausen, M., Weber, H. B., & Seyller, T.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 2011-09-19
- Volume
- 99
- Issue
- 12
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W2006640878
- Cited by
- 267
- References
- 22
- FWCI
- 15.49
- Type
- journal article
- Language
- en
- Open access
- green
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- Speck, F., Jobst, J., Fromm, F., Ostler, M., Waldmann, D., Hundhausen, M., Weber, H. B., & Seyller, T. (2011). The quasi-free-standing nature of graphene on H-saturated SiC(0001). Applied Physics Letters. https://doi.org/10.1063/1.3643034
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