The DOI matches its Crossref record; 7 of the 7 references it cites were found in a registry or an index.
Comparison of two methods for describing the strain profiles in quantum dots
Open accessAbstract
The electronic structure of interfaces between lattice-mismatched semiconductors is sensitive to the strain. We compare two approaches for calculating such inhomogeneous strain—continuum elasticity [(CE), treated as a finite difference problem] and atomistic elasticity. While for small strain the two methods must agree, for the large strains that exist between lattice-mismatched III-V semiconductors (e.g., 7% for InAs/GaAs outside the linearity regime of CE) there are discrepancies. We compare the strain profile obtained by both approaches (including the approximation of the correct C2 symmetry by the C4 symmetry in the CE method) when applied to C2-symmetric InAs pyramidal dots capped by GaAs.
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Cites
LANDAU, L. D., & LIFSHITZ, E. M. (1951) · Cited by 5,903
Keating, P. N. (1966) · Physical Review · doi:10.1103/physrev.145.637 · Cited by 2,383
Elastic Properties of ZnS Structure Semiconductors
Martin, R. M. (1970) · Physical Review B · doi:10.1103/physrevb.1.4005 · Cited by 1,292
Bond lengths around isovalent impurities and in semiconductor solid solutions
Martins, J. L., & Zunger, A. (1984) · Physical Review B · doi:10.1103/physrevb.30.6217 · Cited by 435
Self-citationWei, S.-H., & Zunger, A. (1994) · Physical Review B · doi:10.1103/physrevb.49.14337 · Cited by 158
Self-citationAtomic-scale structure of disordered Ga1−x Inx P alloys
Silverman, A., Zunger, A., Kalish, R., & Adler, J. (1995) · Physical review. B, Condensed matter · doi:10.1103/physrevb.51.10795 · Cited by 64
Self-citationIs there an elastic anomaly for a (001) monolayer of InAs embedded in GaAs?
Bernard, J. E., & Zunger, A. (1994) · Applied Physics Letters · doi:10.1063/1.112660 · Cited by 56
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Cited by
Electronic and optical properties of strained quantum dots modeled by 8-band k⋅p theory
Stier, O., Grundmann, M., & Bimberg, D. (1999) · Physical Review B · doi:10.1103/physrevb.59.5688 · Cited by 1,079
Structural properties of self-organized semiconductor nanostructures
Stangl, J., Holý, V., & Bauer, G. (2004) · Reviews of Modern Physics · doi:10.1103/revmodphys.76.725 · Cited by 801
Bester, G., Nair, S., & Zunger, A. (2003) · Physical Review B · doi:10.1103/physrevb.67.161306 · Cited by 340
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Metadata
- Authors
- Pryor, C., Kim, J., Wang, L. W., Williamson, A. J., & Zunger, A.
- Venue
- Journal of Applied Physics
- Publisher
- AIP Publishing
- Published
- 1998-03-01
- Volume
- 83
- Issue
- 5
- Pages
- 2548-2554
- ISSN
- 0021-8979 (ISSN-L)
- 1089-7550
- OpenAlex
- W1983769857
- Cited by
- 440
- References
- 7
- FWCI
- 12.02
- Type
- journal article
- Language
- en
- Open access
- green
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- Pryor, C., Kim, J., Wang, L. W., Williamson, A. J., & Zunger, A. (1998). Comparison of two methods for describing the strain profiles in quantum dots. Journal of Applied Physics. https://doi.org/10.1063/1.366631
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