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Electronic and optical properties of strained quantum dots modeled by 8-band k⋅p theory

Stier, O., Grundmann, M., Bimberg, D.·1999·Physical Review B

Abstract

We present a systematic investigation of the elastic, electronic, and linear optical properties of quantum dot double heterostructures in the frame of eight-band $\mathbf{k}\ensuremath{\cdot}\mathbf{p}$ theory. Numerical results for the model system of capped pyramid shaped InAs quantum dots in GaAs (001) with ${101}$ facets are presented. Electron and hole levels, dipole transition energies, oscillator strengths, and polarizations for both electron-hole and electron-electron transitions, as well as the exciton ground-state binding energy and the electron ground-state Coulomb charging energy are calculated. The dependence of all these properties on the dot size is investigated for base widths between 10 and $20$ nm. Results for two different approaches to model strain, continuum elasticity theory, and the Keatings valence force field model in the linearized version of Kane, are compared to each other.

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Metadata

Authors
Stier, O., Grundmann, M., & Bimberg, D.
Venue
Physical Review B
Published
1999-02-15
Volume
59
Issue
8
Pages
5688-5701
ISSN
  • 0163-1829 (ISSN-L)
  • 1095-3795
OpenAlex
W2054625634
Cited by
1,079
References
24
FWCI
42.66
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Electronic and optical properties of strained quantum dots modeled by 8-band k⋅p theory. https://app.cochat.ai/papers/10.1103/physrevb.59.5688
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Stier, O., Grundmann, M., & Bimberg, D. (1999). Electronic and optical properties of strained quantum dots modeled by 8-band k⋅p theory. Physical Review B. https://doi.org/10.1103/physrevb.59.5688

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