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Cited by 305

The DOI matches its Crossref record; 23 of the 23 references it cites were found in a registry or an index.

Effect of the heterointerface on the spin splitting in modulation doped InxGa1−xAs/InP quantum wells for B→0

Schäpers, Th., Engels, G., Lange, J., Klocke, Th., Hollfelder, M., Lüth, H.·1998·Journal of Applied Physics

Abstract

Spin splitting of conduction band electrons in In0.53Ga0.47As/In0.77Ga0.23As/InP heterostructures due to spin-orbit coupling is studied by performing Shubnikov–de Haas measurements on nongated and gated Hall bars. From an analysis of the beating pattern in the Shubnikov–de Haas oscillations, the spin-orbit coupling constant is determined. For a symmetric sample no beating pattern and thus no spin splitting is observed. This demonstrates that the k3 contribution to the spin-orbit coupling constant can be neglected. By applying an envelope function theory it is shown that the major contribution to the Rashba spin-orbit coupling originates from the band offset at the interface of the quantum well. Using gated Hall bar structures it is possible to alter the spin-orbit coupling by application of an appropriate gate voltage. A more negative gate voltage leads to a more pronounced asymmetry of the quantum well, which gives rise to a stronger spin-orbit coupling.

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Metadata

Authors
Schäpers, T., Engels, G., Lange, J., Klocke, T., Hollfelder, M., & Lüth, H.
Venue
Journal of Applied Physics
Published
1998-04-15
Volume
83
Issue
8
Pages
4324-4333
ISSN
  • 0021-8979 (ISSN-L)
  • 1089-7550
OpenAlex
W2053672461
Cited by
305
References
23
FWCI
6.87
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Effect of the heterointerface on the spin splitting in modulation doped InxGa1−xAs/InP quantum wells for B→0. https://app.cochat.ai/papers/10.1063/1.367192
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Schäpers, T., Engels, G., Lange, J., Klocke, T., Hollfelder, M., & Lüth, H. (1998). Effect of the heterointerface on the spin splitting in modulation doped InxGa1−xAs/InP quantum wells for B→0. Journal of Applied Physics. https://doi.org/10.1063/1.367192

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