Electrical characteristics of thin Ta2O5 films deposited by reactive pulsed direct-current magnetron sputtering
Abstract
Room temperature deposition of tantalum oxide films on metallized silicon substrates was investigated by reactive pulsed magnetron sputtering of Ta in an Ar/O2 ambient. The dielectric constant of the tantalum oxide ranged from 19 to 31 depending on the oxygen percentage [P(%)=PO2/(PO2+PAr)] used during sputtering. The leakage current density was less than 10 nA/cm2 at 0.5 MV/cm electric field and the dielectric breakdown field was greater than 3.8 MV/cm for P=60%. A charge storage as high as 3.3 μF/cm2 was achieved for 70-Å-thick film. Pulse frequency variation (from 20 to 200 kHz) did not give a significant effect in the electrical properties (dielectric constant or leakage current density) of the Ta2O5 films.
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The relative permittivity of the tantalum oxide film was estimated to be εr film = 30, in agreement with literature data for tantalum oxide.
“The relative permittivity of the film was estimated to be ε r film = 30, which is in agreement with data available in the literature for tantalum oxide [26].”
From Sub-nanosecond switching of a tantalum oxide memristor (2011) · cites this paper as [26]
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Sub-nanosecond switching of a tantalum oxide memristor
Torrezan, A. C., Strachan, J. P., Medeiros-Ribeiro, G., & Williams, R. S. (2011) · Nanotechnology · doi:10.1088/0957-4484/22/48/485203 · Cited by 701 · see citing works
- Authors
- Kim, J.-Y., Nielsen, M. C., Rymaszewski, E. J., & Lu, T.-M.
- Affiliations
- Rensselaer Polytechnic Institute (US)
- ORCID
- Lu, T.-M.
- Venue
- Journal of Applied Physics
- Publisher
- AIP Publishing
- Published
- 2000-02-01
- Volume
- 87
- Issue
- 3
- Pages
- 1448-1452
- ISSN
- 0021-8979 (ISSN-L)
- 1089-7550
- OpenAlex
- W1969595558
- Cited by
- 33
- References
- 21
- Citations by year
- 2025: 2 · 2023: 3 · 2012: 2
- FWCI
- 6.05
- Type
- journal article
- Language
- en
- Open access
- closed
- Locations
- Journal of Applied Physics (publishedVersion)
- Funders
- Microelectronics Advanced Research Corporation
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Semiconductor materials and devices
- Physical Sciences › Materials Science › Electronic, Optical and Magnetic Materials › Copper Interconnects and Reliability
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Ferroelectric and Negative Capacitance Devices
- Keywords
- tantalum oxide thin films, tantalum pentoxide, dielectric constant, leakage current density, dielectric breakdown field, charge storage, oxygen partial pressure, room-temperature deposition, pulse frequency
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