The DOI matches its Crossref record; 29 of the 29 references it cites were found in a registry or an index.
Kinetic model for dependence of thin film stress on growth rate, temperature, and microstructure
Abstract
During deposition, many thin films go through a range of stress states, changing from compressive to tensile and back again. In addition, the stress depends strongly on the processing and material parameters. We have developed a simple analytical model to describe the stress evolution in terms of a kinetic competition between different mechanisms of stress generation and relaxation at the triple junction where the surface and grain boundary intersect. The model describes how the steady state stress scales with the dimensionless parameter D/LR where D is the diffusivity, R is the growth rate, and L is the grain size. It also explains the transition from tensile to compressive stress as the microstructure evolves from isolated islands to a continuous film. We compare calculations from the model with measurements of the stress dependence on grain size and growth rate in the steady state regime and of the evolution of stress with thickness for different temperatures.
Overview
Integrity signals
Registry
Cites
Statistics
Verification
Claims the paper makes
Claims other papers make about this one
Each is checked against this paper’s own text: does it say what the citing paper says it does?
In the citing paper
“The kinetic models also suggest that the stress in thin films is formed between the tensile and compressive states. The latter is formed when atoms are inserted at the boundaries, while tensile stress is generated through grain boundary formation [152].”
From Metal Oxide Thin Films for Advanced Photonic Applications (2026) · cites this paper as [152]
In the citing paper
“The thermal stress may arise from the mismatch between the thermal expansion coefficients (CTE) of the deposited film and the substrate, while the intrinsic one is determined by the kinetics of the deposition [152,153].”
From Metal Oxide Thin Films for Advanced Photonic Applications (2026) · cites this paper as [152]
Citations
Cites
Crystallite coalescence: A mechanism for intrinsic tensile stresses in thin films
Nix, W. D., & Clemens, B. M. (1999) · Journal of materials research/Pratt's guide to venture capital sources · doi:10.1557/jmr.1999.0468 · Cited by 665
Stresses and deformation processes in thin films on substrates
Doerner, M. F., & Nix, W. D. (1988) · Critical reviews in solid state and materials sciences/CRC critical reviews in solid state and materials sciences · doi:10.1080/10408438808243734 · Cited by 618
Interfaces and stresses in thin films
Spaepen, F. A. (2000) · Acta Materialia · doi:10.1016/s1359-6454(99)00286-4 · Cited by 534
Stresses in thin films: The relevance of grain boundaries and impurities
Hoffman, R. W. (1976) · Thin Solid Films · doi:10.1016/0040-6090(76)90453-3 · Cited by 483
Origin of Compressive Residual Stress in Polycrystalline Thin Films
Chason, E., Sheldon, B. W., Freund, L. B., Floro, J. A., & Hearne, S. (2002) · Physical Review Letters · doi:10.1103/physrevlett.88.156103 · Cited by 479
Self-citationThe intrinsic stress of polycrystalline and epitaxial thin metal films
Koch, R. (1994) · Journal of Physics Condensed Matter · doi:10.1088/0953-8984/6/45/005 · Cited by 453
Floro, J. A., Hearne, S., Hunter, J. A., Kotula, P. G., Chason, E., Seel, S. C., & Thompson, C. V. (2001) · Journal of Applied Physics · doi:10.1063/1.1352563 · Cited by 356
Self-citationPhysical Origins of Intrinsic Stresses in Volmer–Weber Thin Films
Floro, J. A., Chason, E., Cammarata, R. C., & Srolovitz, D. J. (2002) · MRS Bulletin · doi:10.1557/mrs2002.15 · Cited by 312
Self-citationSurface stress model for intrinsic stresses in thin films
Cammarata, R. C., Trimble, T. M., & Srolovitz, D. J. (2000) · Journal of materials research/Pratt's guide to venture capital sources · doi:10.1557/jmr.2000.0354 · Cited by 240
Measurements of stress during vapor deposition of copper and silver thin films and multilayers
Shull, A. L., & Spaepen, F. A. (1996) · Journal of Applied Physics · doi:10.1063/1.363701 · Cited by 234
Research works printed but not linked: 1
- 2003, Thin Film Materials
Cited by
Sorted by citations
Items 101–133 of 133
Chen, Z.-W., Chen, Q., Rayani, R., Choi, S. H., & Kim, H. (2026) · Nanoscale · doi:10.1039/d6nr00357e · Cited by 2
Stress Shift to Tensile Side by the Interruption of Deposition during Al and Cr Film Processing
Yu, J., & Kim, Y. (2014) · MATERIALS TRANSACTIONS · doi:10.2320/matertrans.m2014207 · Cited by 2
General modeling on substrate curvatures and film stresses in bilayer systems
Mu, Q. (2019) · AIP Advances · doi:10.1063/1.5095551 · Cited by 2
Studies on the Residual Stress and Strain Gradients in Poly-SiGe Nanocantilevers
Asafa, T. B. (2019) · FUOYE Journal of Engineering and Technology · doi:10.46792/fuoyejet.v4i1.303 · Cited by 2
Stress Measurement in Thin Films Using Wafer Curvature: Principles and Applications
Chason, E. (2019) · Springer eBooks · doi:10.1007/978-981-10-6884-3_49 · Cited by 2
Self-citationGrowth and Structural Properties of Rare Earth Nitride Thin Films
Chan, J. R. (2019) · doi:10.26686/wgtn.17135048 · Cited by 2
Metal Oxide Thin Films for Advanced Photonic Applications
Stîngescu, M.-L., Șopronyi, M.-A., Antohe, Ș., & Scărișoreanu, N.-D. (2026) · Crystals · doi:10.3390/cryst16030164 · Cited by 2
“The thermal stress may arise from the mismatch between the thermal expansion coefficients (CTE) of the deposited film and the substrate, while the intrinsic one is determined by the kinetics of the deposition [152,153].”
Li, Y., Zhao, Y. N., & Chen, Z. T. (2024) · Radiation effects and defects in solids · doi:10.1080/10420150.2024.2359688 · Cited by 1
Ghasemzadeh, S., Fu, X., Lin, Z., Yonggang, 潘. P., Wang, Z., Arya, R. K., & Dong, J. (2025) · Optik · doi:10.1016/j.ijleo.2025.172300 · Cited by 1
Morgan, T. W., Bouwmeester, L., Bana, L., Cornelissen, M. J. H., Rasinski, M., Zoethout, E., van Kesteren, J., Robben, C. J. D., Mathayan, V., Brons, S., et al. (2026) · Nuclear Fusion · doi:10.1088/1741-4326/ae34c5 · Cited by 1
Dahl-Hansen, R., Stange, M., Sunde, T. O., & Ulyashin, A. G. (2024) · Coatings · doi:10.3390/coatings14070808 · Cited by 1
Wear and adhesion of PEALD titanium molybdenum nitrides: Effects of film-substrate interface
Meter, K. E. V., Chowdhury, M. I., Babuska, T. F., Haik, J., Tanasarnsopaporn, T., Sowa, M. J., Kozen, A. C., Strandwitz, N. C., & Krick, B. A. (2025) · Wear · doi:10.1016/j.wear.2025.205980 · Cited by 1
Ma, Y., Zhu, L., Mai, Q., Xie, Z., Jiang, S., Zhang, L., Fan, Y., Li, T., Li, H., Jia, B., et al. (2026) · Chemistry - An Asian Journal · doi:10.1002/asia.70526 · Cited by 1
Formation of (100) texture in thin Ti films under low-energy ion bombardment
Selyukov, R. V., Izyumov, M. O., Наумов, В. В., & Mazaletskiy, L. A. (2022) · Письма в журнал технической физики · doi:10.21883/tpl.2022.15.53816.18890 · Cited by 1
Jamnig, A. (2020) · Linköping studies in science and technology. Dissertations · doi:10.3384/diss.diva-168458 · Cited by 1
Selyukov, R. V., Izyumov, M. O., Наумов, В. В., & Мазалецкий, Л. А. (2021) · Письма в журнал технической физики · doi:10.21883/pjtf.2021.23.51782.18890 · Cited by 1
Lee, S., Oh, S., & Kim, Y. (2014) · Journal of the Korean institute of surface engineering · doi:10.5695/jkise.2014.47.6.303
On the self-patterning of islands by mechanical constraints during electrochemical deposition
Luo, T., Guo, L., & Cammarata, R. C. (2014) · Applied Physics A · doi:10.1007/s00339-014-8850-0
Coating yttria stabilized zirconia powders by magnetron sputtering
Togaru, M. (2019)
Mbam, S. O. (2021) · Colloid and Surface Science · doi:10.11648/j.css.20210601.12
Growth of hard metal films by deep oscillation magnetron sputtering
Li, Y., Chen, C. L., Liu, W. Y., & Li, L. (2023) · Surface Engineering · doi:10.1080/02670844.2023.2243000
Changes of the Crystalline Texture and Resistivity of Ti Films under Ion Bombardment
Selyukov, R. V., Amirov, I. I., Izyumov, M. O., Наумов, В. В., & Mazaletskiy, L. A. (2024) · Technical Physics · doi:10.1134/s1063784224040352
Stress and Refractive Index of PECVD SiO2 films at Different Deposition Conditions
Marcos, E. A., Cavinatto, I. C. H., & Hawkins, A. R. (2025) · Intermountain Engineering, Technology and Computing (IETC) · doi:10.1109/ietc64455.2025.11039476
Residual stress in Germanium single crystals caused by femtosecond laser micromachining
Fréville, R., Gruber, P. A., Lee, S. W., Micha, J., Robach, O., Ulrich, O., & Kirchlechner, C. (2025) · Materialia · doi:10.1016/j.mtla.2025.102648
SHUGUROV, A. R., & Kuzminov, E. D. (2026) · Physical Mesomechanics · doi:10.1134/s1029959925600454
Impact of thermal annealing on stress, morphology, and field emission of NbTiN thin films
Anonymous, Brockner, F., & Lützenkirchen−Hecht, D. (2026) · Physical Review Accelerators and Beams · doi:10.1103/hznn-ftkg
Modeling and extraction of residual stresses in some MEMS multilayer systems
Long, L., Long, F., Schwartz, B., Brokmann, G., & Ortlepp, T. (2026) · Journal of sensors and sensor systems · doi:10.5194/jsss-15-167-2026
Metadata
- Authors
- Chason, E., Shin, J. W., Hearne, S. J., & Freund, L. B.
- Affiliations
- University of Illinois Urbana-Champaign (US)
- Venue
- Journal of Applied Physics
- Publisher
- AIP Publishing
- Published
- 2012-04-15
- Volume
- 111
- Issue
- 8
- ISSN
- 0021-8979 (ISSN-L)
- 1089-7550
- OpenAlex
- W2076138392
- Cited by
- 134
- References
- 29
- Citations by year
- 2026: 6 · 2025: 9 · 2024: 7 · 2023: 11 · 2022: 9 · 2021: 11 · 2020: 14 · 2019: 21 · 2018: 9 · 2017: 2 · 2016: 9 · 2015: 4 · 2014: 17 · 2013: 4 · 2012: 1
- FWCI
- 10.98
- Type
- journal article
- Language
- en
- Open access
- closed
- Locations
- Journal of Applied Physics (publishedVersion)
- Funders
- U.S. Department of Energy
- National Nuclear Security Administration
- Lawrence Livermore National Laboratory
- Sandia National Laboratories
- Topics
- Physical Sciences › Engineering › Mechanics of Materials › Metal and Thin Film Mechanics
- Physical Sciences › Engineering › Computational Mechanics › Fluid Dynamics and Thin Films
- Physical Sciences › Materials Science › Materials Chemistry › Advanced Materials and Semiconductor Technologies
- Keywords
- film stress, stress evolution, kinetic model, stress relaxation, triple junctions, grain boundaries, surface diffusion, growth rate (crystal and thin-film growth), grain size, microstructure evolution, deposition temperature, analytical model
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
What counts as a claim ›How we measure confidence ›How we check this ›
Are you an author, or do you see a problem with this page? Request a review
