Cited by 134Metal and Thin Film MechanicsFluid Dynamics and Thin FilmsAdvanced Materials and Semiconductor Technologies

The DOI matches its Crossref record; 29 of the 29 references it cites were found in a registry or an index.

Kinetic model for dependence of thin film stress on growth rate, temperature, and microstructure

Chason, E., Shin, J. W., Hearne, S. J., Freund, L. B.·2012·Journal of Applied Physics

Abstract

During deposition, many thin films go through a range of stress states, changing from compressive to tensile and back again. In addition, the stress depends strongly on the processing and material parameters. We have developed a simple analytical model to describe the stress evolution in terms of a kinetic competition between different mechanisms of stress generation and relaxation at the triple junction where the surface and grain boundary intersect. The model describes how the steady state stress scales with the dimensionless parameter D/LR where D is the diffusivity, R is the growth rate, and L is the grain size. It also explains the transition from tensile to compressive stress as the microstructure evolves from isolated islands to a continuous film. We compare calculations from the model with measurements of the stress dependence on grain size and growth rate in the steady state regime and of the evolution of stress with thickness for different temperatures.

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Crossref · 10.1063/1.4704683

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29 of 29 references verified0 citation errors · 0 not checkable

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  1. 2003, Thin Film Materials

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Metadata

Authors
Chason, E., Shin, J. W., Hearne, S. J., & Freund, L. B.
Affiliations
University of Illinois Urbana-Champaign (US)
Venue
Journal of Applied Physics
Published
2012-04-15
Volume
111
Issue
8
ISSN
  • 0021-8979 (ISSN-L)
  • 1089-7550
OpenAlex
W2076138392
Cited by
134
References
29
Citations by year
2026: 6 · 2025: 9 · 2024: 7 · 2023: 11 · 2022: 9 · 2021: 11 · 2020: 14 · 2019: 21 · 2018: 9 · 2017: 2 · 2016: 9 · 2015: 4 · 2014: 17 · 2013: 4 · 2012: 1
FWCI
10.98
Type
journal article
Language
en
Open access
closed
Locations
Journal of Applied Physics (publishedVersion)
Funders
  • U.S. Department of Energy
  • National Nuclear Security Administration
  • Lawrence Livermore National Laboratory
  • Sandia National Laboratories
Topics
  • Physical Sciences › Engineering › Mechanics of Materials › Metal and Thin Film Mechanics
  • Physical Sciences › Engineering › Computational Mechanics › Fluid Dynamics and Thin Films
  • Physical Sciences › Materials Science › Materials Chemistry › Advanced Materials and Semiconductor Technologies
Keywords
film stress, stress evolution, kinetic model, stress relaxation, triple junctions, grain boundaries, surface diffusion, growth rate (crystal and thin-film growth), grain size, microstructure evolution, deposition temperature, analytical model

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