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High mobility ambipolar MoS2 field-effect transistors: Substrate and dielectric effects
Open accessAbstract
We fabricate MoS2 field effect transistors on both SiO2 and polymethyl methacrylate (PMMA) dielectrics and measure charge carrier mobility in a four-probe configuration. For multilayer MoS2 on SiO2, the mobility is 30–60 cm2/Vs, relatively independent of thickness (15–90 nm), and most devices exhibit unipolar n-type behavior. In contrast, multilayer MoS2 on PMMA shows mobility increasing with thickness, up to 470 cm2/Vs (electrons) and 480 cm2/Vs (holes) at thickness ∼50 nm. The dependence of the mobility on thickness points to a long-range dielectric effect of the bulk MoS2 in increasing mobility.
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Novoselov, K. S., Jiang, D., Schedin, F., Booth, T. J., Khotkevich, V. V., Morozov, S. V., & Geim, A. K. (2005) · Proceedings of the National Academy of Sciences · doi:10.1073/pnas.0502848102 · Cited by 11,788
Cited by
Recent development of two-dimensional transition metal dichalcogenides and their applications
Choi, W., Choudhary, N., Han, G. H., Park, J., Akinwande, D., & Lee, Y. H. (2017) · Materials Today · doi:10.1016/j.mattod.2016.10.002 · Cited by 2,769
Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides
Jariwala, D., Sangwan, V. K., Lauhon, L. J., Marks, T. J., & Hersam, M. C. (2014) · ACS Nano · doi:10.1021/nn500064s · Cited by 2,753
Electrically-Transduced Chemical Sensors Based on Two-Dimensional Nanomaterials
Meng, Z., Stolz, R. M., Mendecki, L., & Mirica, K. A. (2019) · Chemical Reviews · doi:10.1021/acs.chemrev.8b00311 · Cited by 773
Electron-hole transport and photovoltaic effect in gated MoS2 Schottky junctions
Fontana, M., Deppe, T., Boyd, A. K., Rinzan, M., Liu, A. Y., Paranjape, M., & Barbara, P. (2013) · Scientific Reports · doi:10.1038/srep01634 · Cited by 517
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Metadata
- Authors
- Bao, W., Cai, X., Kim, D., Sridhara, K., & Fuhrer, M. S.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 2013-01-28
- Volume
- 102
- Issue
- 4
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W1963685984
- Cited by
- 791
- References
- 4
- FWCI
- 37.74
- Type
- journal article
- Language
- en
- Open access
- green
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