The DOI matches its Crossref record; 2 of the 2 references it cites were found in a registry or an index.
Band-like transport in high mobility unencapsulated single-layer MoS2 transistors
Open accessAbstract
Ultra-thin MoS2 has recently emerged as a promising two-dimensional semiconductor for electronic and optoelectronic applications. Here, we report high mobility (>60 cm2/Vs at room temperature) field-effect transistors that employ unencapsulated single-layer MoS2 on oxidized Si wafers with a low level of extrinsic contamination. While charge transport in the sub-threshold regime is consistent with a variable range hopping model, monotonically decreasing field-effect mobility with increasing temperature suggests band-like transport in the linear regime. At temperatures below 100 K, temperature-independent mobility is limited by Coulomb scattering, whereas, at temperatures above 100 K, phonon-limited mobility decreases as a power law with increasing temperature.
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Cites
Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
Wang, Q. H., Kalantar-Zadeh, K., Kis, A., Coleman, J. N., & Strano, M. S. (2012) · Nature Nanotechnology · doi:10.1038/nnano.2012.193 · Cited by 16,374
Two-dimensional atomic crystals
Novoselov, K. S., Jiang, D., Schedin, F., Booth, T. J., Khotkevich, V. V., Morozov, S. V., & Geim, A. K. (2005) · Proceedings of the National Academy of Sciences · doi:10.1073/pnas.0502848102 · Cited by 11,788
Cited by
Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides
Jariwala, D., Sangwan, V. K., Lauhon, L. J., Marks, T. J., & Hersam, M. C. (2014) · ACS Nano · doi:10.1021/nn500064s · Cited by 2,753
Self-citationSchmidt, H., Giustiniano, F., & Eda, G. (2015) · Chemical Society Reviews · doi:10.1039/c5cs00275c · Cited by 466
Chuang, H.-J., Chamlagain, B., Koehler, M., Perera, M. M., Yan, J., Mandrus, D., Tománek, D., & Zhou, Z. (2016) · Nano Letters · doi:10.1021/acs.nanolett.5b05066 · Cited by 426
Analyzing the Carrier Mobility in Transition‐Metal Dichalcogenide MoS2 Field‐Effect Transistors
Yu, Z., Ong, Z., Li, S., Xu, J., Zhang, G., Zhang, Y., Shi, Y., & Wang, X. (2017) · Advanced Functional Materials · doi:10.1002/adfm.201604093 · Cited by 426
Sulfur vacancies in monolayer MoS2 and its electrical contacts
Liu, D., Guo, Y., Fang, L., & Robertson, J. (2013) · Applied Physics Letters · doi:10.1063/1.4824893 · Cited by 417
Metadata
- Authors
- Jariwala, D., Sangwan, V. K., Late, D. J., Johns, J. E., Dravid, V. P., Marks, T. J., Lauhon, L. J., & Hersam, M. C.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 2013-04-29
- Volume
- 102
- Issue
- 17
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W2069966461
- Cited by
- 399
- References
- 2
- FWCI
- 20.72
- Type
- journal article
- Language
- en
- Open access
- green
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- Jariwala, D., Sangwan, V. K., Late, D. J., Johns, J. E., Dravid, V. P., Marks, T. J., Lauhon, L. J., & Hersam, M. C. (2013). Band-like transport in high mobility unencapsulated single-layer MoS2 transistors. Applied Physics Letters. https://doi.org/10.1063/1.4803920
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