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The effects of crystallographic orientation and strain of thin Hf0.5Zr0.5O2 film on its ferroelectricity
Abstract
To elucidate the origin of the formation of the ferroelectric phase in Hf0.5Zr0.5O2 films, the effects of film strain and crystallographic orientation on the properties were examined. Using a (111)-textured Pt bottom electrode, Hf0.5Zr0.5O2 films with a (111)-preferred texture inappropriate for transforming their phase from non-ferroelectric tetragonal to ferroelectric orthorhombic phase were deposited. In contrast, randomly oriented Hf0.5Zr0.5O2 films, grown on the TiN electrode, showed feasible ferroelectric properties due to their transformation to the ferroelectric orthorhombic phase. The origin of such transformation is the large in-plane tensile strain for the elongation of the c-axis of the tetragonal phase.
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Citations
Cited by
Ferroelectric Analog Synaptic Transistors
Kim, M.-K., & Lee, J.-S. (2019) · Nano Letters · doi:10.1021/acs.nanolett.9b00180 · Cited by 594
A rhombohedral ferroelectric phase in epitaxially strained Hf0.5Zr0.5O2 thin films
Wei, Y., Nukala, P., Salverda, M., Matzen, S., Zhao, H. J., Momand, J., Everhardt, A. S., Agnus, G., Blake, G. R., Lecoeur, P., et al. (2018) · Nature Materials · doi:10.1038/s41563-018-0196-0 · Cited by 587
Ferroelectric Hf0.5Zr0.5O2 Thin Films: A Review of Recent Advances
Kim, S. J., Mohan, J., Summerfelt, S. R., & Kim, J. (2019) · JOM · doi:10.1007/s11837-018-3140-5 · Cited by 363
Park, M. H., Kim, H. J., Kim, Y. J., Moon, T., Kim, K. D., & Hwang, C. S. (2014) · Advanced Energy Materials · doi:10.1002/aenm.201400610 · Cited by 344
Self-citationZhou, Y., Zhang, Y. K., Yang, Q., Jiang, J., Fan, P., Liao, M., & Zhou, Y. C. (2019) · Computational Materials Science · doi:10.1016/j.commatsci.2019.05.041 · Cited by 268
Metadata
- Authors
- Hyuk Park, M., Joon Kim, H., Jin Kim, Y., Moon, T., & Seong Hwang, C.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 2014-02-17
- Volume
- 104
- Issue
- 7
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W2048040049
- Cited by
- 396
- References
- 0
- FWCI
- 9.20
- Type
- journal article
- Language
- en
- Open access
- closed
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- Hyuk Park, M., Joon Kim, H., Jin Kim, Y., Moon, T., & Seong Hwang, C. (2014). The effects of crystallographic orientation and strain of thin Hf0.5Zr0.5O2 film on its ferroelectricity. Applied Physics Letters. https://doi.org/10.1063/1.4866008
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