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Cited by 35Photonic and Optical DevicesAdvanced Semiconductor Detectors and MaterialsSemiconductor Lasers and Optical Devices

The DOI matches its Crossref record; 49 of the 50 references it cites were found in a registry or an index.

Design and Optimization of GeSn Waveguide Photodetectors for 2-µm Band Silicon Photonics

Open access
Ghosh, Soumava, Bansal, Radhika, Sun, Greg, Soref, Richard A., Cheng, Hung-Hsiang, Chang, Guo-En·2022·Sensors
DOI 10.3390/s22113978PMC PMC9183011

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Abstract

Silicon photonics is emerging as a competitive platform for electronic–photonic integrated circuits (EPICs) in the 2 µm wavelength band where GeSn photodetectors (PDs) have proven to be efficient PDs. In this paper, we present a comprehensive theoretical study of GeSn vertical p–i–n homojunction waveguide photodetectors (WGPDs) that have a strain-free and defect-free GeSn active layer for 2 µm Si-based EPICs. The use of a narrow-gap GeSn alloy as the active layer can fully cover entire the 2 µm wavelength band. The waveguide structure allows for decoupling the photon-absorbing path and the carrier collection path, thereby allowing for the simultaneous achievement of high-responsivity and high-bandwidth (BW) operation at the 2 µm wavelength band. We present the theoretical models to calculate the carrier saturation velocities, optical absorption coefficient, responsivity, 3-dB bandwidth, zero-bias resistance, and detectivity, and optimize this device structure to achieve highest performance at the 2 µm wavelength band. The results indicate that the performance of the GeSn WGPD has a strong dependence on the Sn composition and geometric parameters. The optimally designed GeSn WGPD with a 10% Sn concentration can give responsivity of 1.55 A/W, detectivity of 6.12 × 1010 cmHz½W−1 at 2 µm wavelength, and ~97 GHz BW. Therefore, this optimally designed GeSn WGPD is a potential candidate for silicon photonic EPICs offering high-speed optical communications.

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Crossref · 10.3390/s22113978

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49 of 49 references verified0 citation errors · 0 not checkable

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  • The WG-QDPD outperforms monolithically grown GeSn (responsivity < 0.52 A/W and dark current > 1 mA).

    “Notably, these results are on par with the best-performing bonded III-V photodetectors reported in the literature (responsivity 0.4-1.4 A/W around 2.3 μ m and dark current 10 nA-2.5 μ A), 6-9 outperforming monolithically grown GeSn (responsivity &lt; 0.52 A/W and dark current &gt; 1 mA). 13-16”

    From A silicon photonics waveguide-coupled colloidal quantum dot photodiode sensitive beyond 1.6 µ m (2024) · cites this paper as [15]

    Section 4.10 says the proposed GeSn waveguide photodetector can outperform previously reported GeSn photodetectors in responsivity at 2 µm. It does not give the claimed <0.52 A/W responsivity bound or >1 mA dark-current bound for monolithically grown devices; Section 4.7 discusses calculated dark-current density for the proposed design, not that comparison. (LLM, conf=0.83)

    Experimental — accuracy not yet measured

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1 of the 50 references couldn’t be matched to a known paper.

Research works printed but not linked: 2

  1. Ghosh, 2022, Comparative Study of Si–Ge–Sn Resonant Cavity Enhanced Heterojunction Bipolar Phototransistor under Quantum Confined Stark Effect and Franz Keldysh Effect at 1.55 µm, IOSR J. Elec. Comm. Eng., 17, 1
  2. Kumar, 2020, Impact of Temperature and Doping on the Performance of Ge/Ge1−xSnx/Ge Heterojunction Phototransistors, IEEE Photonics J., 12, 6801814

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Metadata

Authors
Ghosh, S., Bansal, R., Sun, G., Soref, R. A., Cheng, H.-H., & Chang, G.-E.
Affiliations
  • University of Calcutta (IN)
  • National Chung Cheng University (TW)
  • University of Massachusetts Boston (US)
  • National Taiwan University (TW)
Corresponding author
Chang, Guo-En
ORCID
Venue
Sensors
Publisher
MDPI AG
Published
2022-05-24
Volume
22
Issue
11
Pages
3978
ISSN
1424-8220 (ISSN-L)
DOI
10.3390/s22113978
PMC
PMC9183011
OpenAlex
W4281476268
Cited by
35
References
50
Citations by year
2026: 5 · 2025: 8 · 2024: 14 · 2023: 6 · 2022: 2
FWCI
2.05
Type
journal article
Language
en
Open access
Licence
Locations
  • Sensors (publishedVersion, cc-by)
  • Preprints.org (acceptedVersion, cc-by)
  • PubMed Central (publishedVersion, cc-by)
  • PubMed (publishedVersion)
  • DOAJ (DOAJ: Directory of Open Access Journals) (submittedVersion, cc-by-sa)
Funders
  • Young Scholar Fellowship Programby Ministry of Science and Technology (MOST) Taiwan (MOST 110–2636–E–194–002, FA9550–19–1–0341, FA9550–21–1–0347)
  • Air Force Office of Scientific Research (MOST 110–2636–E–194–002, FA9550–19–1–0341, FA9550–21–1–0347)
Topics
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Photonic and Optical Devices
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced Semiconductor Detectors and Materials
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Semiconductor Lasers and Optical Devices
Keywords
silicon photonics, electronic-photonic integrated circuits, optical absorption coefficient, responsivity, 3-dB bandwidth, detectivity, high-speed optical transmission

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