The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.
Stabilizing the ferroelectric phase in doped hafnium oxide
Abstract
The ferroelectric properties and crystal structure of doped HfO2 thin films were investigated for different thicknesses, electrode materials, and annealing conditions. Metal-ferroelectric-metal capacitors containing Gd:HfO2 showed no reduction of the polarization within the studied thickness range, in contrast to hafnia films with other dopants. A qualitative model describing the influence of basic process parameters on the crystal structure of HfO2 was proposed. The influence of different structural parameters on the field cycling behavior was examined. This revealed the wake-up effect in doped HfO2 to be dominated by interface induced effects, rather than a field induced phase transition. TaN electrodes were shown to considerably enhance the stabilization of the ferroelectric phase in HfO2 compared to TiN electrodes, yielding a Pr of up to 35 μC/cm2. This effect was attributed to the interface oxidation of the electrodes during annealing, resulting in a different density of oxygen vacancies in the Gd:HfO2 films. Ab initio simulations confirmed the influence of oxygen vacancies on the phase stability of ferroelectric HfO2.
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Citations
Cites
Electric field cycling behavior of ferroelectric hafnium oxide
Schenk, T., Schroeder, U., Pešić, M., Popovici, M., Pershin, Y. V., & Mikolajick, T. (2014) · ACS Applied Materials & Interfaces · doi:10.1021/am504837r · Cited by 197
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Cited by
Physical Mechanisms behind the Field‐Cycling Behavior of HfO2‐Based Ferroelectric Capacitors
Pešić, M., Fengler, F. P. G., Larcher, L., Padovani, A., Schenk, T., Grimley, E. D., Sang, X., LeBeau, J. M., Slesazeck, S., Schroeder, U., et al. (2016) · Advanced Functional Materials · doi:10.1002/adfm.201600590 · Cited by 964
Self-citationA rhombohedral ferroelectric phase in epitaxially strained Hf0.5Zr0.5O2 thin films
Wei, Y., Nukala, P., Salverda, M., Matzen, S., Zhao, H. J., Momand, J., Everhardt, A. S., Agnus, G., Blake, G. R., Lecoeur, P., et al. (2018) · Nature Materials · doi:10.1038/s41563-018-0196-0 · Cited by 587
Lanthanum-Doped Hafnium Oxide: A Robust Ferroelectric Material
Schroeder, U., Richter, C., Park, M. H., Schenk, T., Pešić, M., Hoffmann, M., Fengler, F. P. G., Pohl, D., Rellinghaus, B., Zhou, C., et al. (2018) · Inorganic Chemistry · doi:10.1021/acs.inorgchem.7b03149 · Cited by 367
Self-citationEvidence for oxygen vacancies movement during wake-up in ferroelectric hafnium oxide
Starschich, S., Menzel, S., & Böttger, U. (2016) · Applied Physics Letters · doi:10.1063/1.4940370 · Cited by 308
Zhou, Y., Zhang, Y. K., Yang, Q., Jiang, J., Fan, P., Liao, M., & Zhou, Y. C. (2019) · Computational Materials Science · doi:10.1016/j.commatsci.2019.05.041 · Cited by 268
Metadata
- Authors
- Hoffmann, M., Schroeder, U., Schenk, T., Shimizu, T., Funakubo, H., Sakata, O., Pohl, D., Drescher, M., Adelmann, C., Materlik, R., Kersch, A., & Mikolajick, T.
- Venue
- Journal of Applied Physics
- Publisher
- AIP Publishing
- Published
- 2015-08-19
- Volume
- 118
- Issue
- 7
- ISSN
- 0021-8979 (ISSN-L)
- 1089-7550
- OpenAlex
- W1636395677
- Cited by
- 606
- References
- 1
- FWCI
- 12.51
- Type
- journal article
- Language
- en
- Open access
- closed
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- Hoffmann, M., Schroeder, U., Schenk, T., Shimizu, T., Funakubo, H., Sakata, O., Pohl, D., Drescher, M., Adelmann, C., Materlik, R., Kersch, A., & Mikolajick, T. (2015). Stabilizing the ferroelectric phase in doped hafnium oxide. Journal of Applied Physics. https://doi.org/10.1063/1.4927805
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