The DOI matches its Crossref record; 29 of the 29 references it cites were found in a registry or an index.
Lanthanum-Doped Hafnium Oxide: A Robust Ferroelectric Material
Open accessAbstract
Recently simulation groups have reported the lanthanide series elements as the dopants that have the strongest effect on the stabilization of the ferroelectric non-centrosymmetric orthorhombic phase in hafnium oxide. This finding confirms experimental results for lanthanum and gadolinium showing the highest remanent polarization values of all hafnia-based ferroelectric films until now. However, no comprehensive overview that links structural properties to the electrical performance of the films in detail is available for lanthanide-doped hafnia. La:HfO 2 appears to be a material with a broad window of process parameters, and accordingly, by optimization of the La content in the layer, it is possible to improve the performance of the material significantly. Variations of the La concentration leads to changes in the crystallographic structure in the bulk of the films and at the interfaces to the electrode materials, which impacts the spontaneous polarization, internal bias fields, and with this the field cycling behavior of the capacitor structure. Characterization results are compared to other dopants like Si, Al, and Gd to validate the advantages of the material in applications such as semiconductor memory devices.
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Cites
Shannon, R. D. (1976) · Acta Crystallographica Section A · doi:10.1107/s0567739476001551 · Cited by 66,145
Ferroelectricity in hafnium oxide thin films
Böscke, T. S., Müller, J., Bräuhaus, D., Schröder, U., & Böttger, U. (2011) · Applied Physics Letters · doi:10.1063/1.3634052 · Cited by 2,832
Physical Mechanisms behind the Field‐Cycling Behavior of HfO2‐Based Ferroelectric Capacitors
Pešić, M., Fengler, F. P. G., Larcher, L., Padovani, A., Schenk, T., Grimley, E. D., Sang, X., LeBeau, J. M., Slesazeck, S., Schroeder, U., et al. (2016) · Advanced Functional Materials · doi:10.1002/adfm.201600590 · Cited by 964
Self-citationMaterlik, R., Künneth, C., & Kersch, A. (2015) · Journal of Applied Physics · doi:10.1063/1.4916707 · Cited by 866
Incipient Ferroelectricity in Al‐Doped HfO2 Thin Films
Mueller, S., Mueller, J., Singh, A., Riedel, S., Sundqvist, J., Schroeder, U., & Mikolajick, T. (2012) · Advanced Functional Materials · doi:10.1002/adfm.201103119 · Cited by 861
Self-citationOn the structural origins of ferroelectricity in HfO2 thin films
Sang, X., Grimley, E. D., Schenk, T., Schroeder, U. P., & LeBeau, J. M. (2015) · Applied Physics Letters · doi:10.1063/1.4919135 · Cited by 655
Self-citationStabilizing the ferroelectric phase in doped hafnium oxide
Hoffmann, M., Schroeder, U., Schenk, T., Shimizu, T., Funakubo, H., Sakata, O., Pohl, D., Drescher, M., Adelmann, C., Materlik, R., et al. (2015) · Journal of Applied Physics · doi:10.1063/1.4927805 · Cited by 606
Self-citationFerroelectric Zr0.5Hf0.5O2 thin films for nonvolatile memory applications
Müller, J., Böscke, T. S., Bräuhaus, D., Schröder, U., Böttger, U., Sundqvist, J., Kücher, P., Mikolajick, T., & Frey, L. (2011) · Applied Physics Letters · doi:10.1063/1.3636417 · Cited by 598
Self-citationMuller, J., Boscke, T. S., Muller, S., Yurchuk, E., Polakowski, P., Paul, J., Martin, D., Schenk, T., Khullar, K., Kersch, A., et al. (2013) · 2013 IEEE International Electron Devices Meeting · doi:10.1109/iedm.2013.6724605 · Cited by 506
Self-citationStructural Changes Underlying Field‐Cycling Phenomena in Ferroelectric HfO2 Thin Films
Grimley, E. D., Schenk, T., Sang, X., Pešić, M., Schroeder, U., Mikolajick, T., & LeBeau, J. M. (2016) · Advanced Electronic Materials · doi:10.1002/aelm.201600173 · Cited by 433
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Cited by
Zhou, Y., Zhang, Y. K., Yang, Q., Jiang, J., Fan, P., Liao, M., & Zhou, Y. C. (2019) · Computational Materials Science · doi:10.1016/j.commatsci.2019.05.041 · Cited by 268
Nonaqueous Chemistry of Group 4 Oxo Clusters and Colloidal Metal Oxide Nanocrystals
Van den Eynden, D., Pokratath, R., & De Roo, J. (2022) · Chemical Reviews · doi:10.1021/acs.chemrev.1c01008 · Cited by 83
Fluorite-structure antiferroelectrics
Park, M. H., & Hwang, C. S. (2019) · Reports on Progress in Physics · doi:10.1088/1361-6633/ab49d6 · Cited by 69
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Metadata
- Authors
- Schroeder, U., Richter, C., Park, M. H., Schenk, T., Pešić, M., Hoffmann, M., Fengler, F. P. G., Pohl, D., Rellinghaus, B., Zhou, C., Chung, C.-C., Jones, J. L., & Mikolajick, T.
- Venue
- Inorganic Chemistry
- Publisher
- American Chemical Society (ACS)
- Published
- 2018-02-15
- Volume
- 57
- Issue
- 5
- Pages
- 2752-2765
- ISSN
- 0020-1669 (ISSN-L)
- 1520-510X
- OpenAlex
- W2787990812
- Cited by
- 367
- References
- 29
- FWCI
- 13.17
- Type
- journal article
- Language
- en
- Open access
- green
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- Schroeder, U., Richter, C., Park, M. H., Schenk, T., Pešić, M., Hoffmann, M., Fengler, F. P. G., Pohl, D., Rellinghaus, B., Zhou, C., Chung, C.-C., Jones, J. L., & Mikolajick, T. (2018). Lanthanum-Doped Hafnium Oxide: A Robust Ferroelectric Material. Inorganic Chemistry. https://doi.org/10.1021/acs.inorgchem.7b03149
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