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Picosecond optoelectronic switching and gating in silicon

Auston, D. H.·1975·Applied Physics Letters

Abstract

Quasimetallic photoconductivity produced by the absorption of picosecond optical pulses in silicon transmission line structures has been used to devise electronic switches and gates which can be turned on and off in a few picoseconds. Electrical signals as large as 100 V can be switched by a few microjoules of optical energy. The switching speed was measured by correlating the response of two transmission gates in tandem, each having an aperture time of 15 psec.

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Metadata

Authors
Auston, D. H.
Venue
Applied Physics Letters
Published
1975-02-01
Volume
26
Issue
3
Pages
101-103
ISSN
  • 0003-6951 (ISSN-L)
  • 1077-3118
OpenAlex
W2003809548
Cited by
768
References
0
FWCI
21.80
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Picosecond optoelectronic switching and gating in silicon. https://app.cochat.ai/papers/10.1063/1.88079
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Auston, D. H. (1975). Picosecond optoelectronic switching and gating in silicon. Applied Physics Letters. https://doi.org/10.1063/1.88079

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Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.