The DOI matches its Crossref record; 7 of the 7 references it cites were found in a registry or an index.
Electron mobilities in modulation-doped semiconductor heterojunction superlattices
Abstract
GaAs-AlxGa1−xAs superlattice structures in which electron mobilities exceed those of otherwise equivalent epitaxial GaAs as well as the Brooks-Herring predictions near room temperature and at very low temperatures are reported. This new behavior is achieved via a modulation-doping technique that spatially separates conduction electrons and their parent donor impurity atoms, thereby reducing the influence of ionized and neutral impurity scattering on the electron motion.
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Cites
Advances in Electronics and Electron Physics
Marton, L., & Sproull, R. L. (1960) · Physics Today · doi:10.1063/1.3056875 · Cited by 1,828
New Transport Phenomenon in a Semiconductor "Superlattice"
Esaki, L., & Chang, L. L. (1974) · Physical Review Letters · doi:10.1103/physrevlett.33.495 · Cited by 715
New Transport Phenomenon in a Semiconductor “Superlattice”
Esaki, L., & Chang, L. L. (1991) · Semiconductor Devices: Pioneering Papers · doi:10.1142/9789814503464_0096 · Cited by 506
Direct Observation of Superlattice Formation in a Semiconductor Heterostructure
Dingle, R., Gossard, A. C., & Wiegmann, W. (1975) · Physical Review Letters · doi:10.1103/physrevlett.34.1327 · Cited by 369
Self-citationElectron States in Crystals with “nipi‐Superstructure”
Döhler, G. H. (1972) · physica status solidi (b) · doi:10.1002/pssb.2220520109 · Cited by 198
Shubnikov—de Haas Oscillations in a Semiconductor Superlattice
Chang, L. L., Sakaki, H., Chang, C. A., & Esaki, L. (1977) · Physical Review Letters · doi:10.1103/physrevlett.38.1489 · Cited by 149
Semiconductor superfine structures by computer-controlled molecular beam epitaxy
Esaki, L., & Chang, L. L. (1976) · Thin Solid Films · doi:10.1016/0040-6090(76)90023-7 · Cited by 112
Cited by
Electronic properties of two-dimensional systems
Ando, T., Fowler, A. B., & Stern, F. (1982) · Reviews of Modern Physics · doi:10.1103/revmodphys.54.437 · Cited by 7,455
Goodnick, S. M. (2008) · Nanostructure Science and Technology · doi:10.1007/978-0-387-76499-3_6 · Cited by 1,016
Two-dimensional electron transport in semiconductor layers. I. Phonon scattering
Price, P. J. (1981) · Annals of Physics · doi:10.1016/0003-4916(81)90250-5 · Cited by 678
Si/SiGe heterostructures: from material and physics to devices and circuits
Paul, D. J. (2004) · Semiconductor Science and Technology · doi:10.1088/0268-1242/19/10/r02 · Cited by 559
Nobel Lecture: Quasielectric fields and band offsets: teaching electrons new tricks
Kroemer, H. (2001) · Reviews of Modern Physics · doi:10.1103/revmodphys.73.783 · Cited by 522
Metadata
- Authors
- Dingle, R., Störmer, H. L., Gossard, A. C., & Wiegmann, W.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 1978-10-01
- Volume
- 33
- Issue
- 7
- Pages
- 665-667
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W2088390729
- Cited by
- 1,515
- References
- 7
- FWCI
- 25.04
- Type
- journal article
- Language
- en
- Open access
- closed
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- Dingle, R., Störmer, H. L., Gossard, A. C., & Wiegmann, W. (1978). Electron mobilities in modulation-doped semiconductor heterojunction superlattices. Applied Physics Letters. https://doi.org/10.1063/1.90457
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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