The DOI matches its Crossref record; 33 of the 33 references it cites were found in a registry or an index.
Large area and structured epitaxial graphene produced by confinement controlled sublimation of silicon carbide
Open accessAbstract
After the pioneering investigations into graphene-based electronics at Georgia Tech, great strides have been made developing epitaxial graphene on silicon carbide (EG) as a new electronic material. EG has not only demonstrated its potential for large scale applications, it also has become an important material for fundamental two-dimensional electron gas physics. It was long known that graphene mono and multilayers grow on SiC crystals at high temperatures in ultrahigh vacuum. At these temperatures, silicon sublimes from the surface and the carbon rich surface layer transforms to graphene. However the quality of the graphene produced in ultrahigh vacuum is poor due to the high sublimation rates at relatively low temperatures. The Georgia Tech team developed growth methods involving encapsulating the SiC crystals in graphite enclosures, thereby sequestering the evaporated silicon and bringing growth process closer to equilibrium. In this confinement controlled sublimation (CCS) process, very high-quality graphene is grown on both polar faces of the SiC crystals. Since 2003, over 50 publications used CCS grown graphene, where it is known as the “furnace grown” graphene. Graphene multilayers grown on the carbon-terminated face of SiC, using the CCS method, were shown to consist of decoupled high mobility graphene layers. The CCS method is now applied on structured silicon carbide surfaces to produce high mobility nano-patterned graphene structures thereby demonstrating that EG is a viable contender for next-generation electronics. Here we present for the first time the CCS method that outperforms other epitaxial graphene production methods.
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Cites
Electric Field Effect in Atomically Thin Carbon Films
Novoselov, K. S., Geim, A. K., Morozov, S. V., Jiang, D., Zhang, Y., Dubonos, S. V., Grigorieva, I. V., & Firsov, A. A. (2004) · Science · doi:10.1126/science.1102896 · Cited by 66,834
Electronic properties of two-dimensional systems
Ando, T., Fowler, A. B., & Stern, F. (1982) · Reviews of Modern Physics · doi:10.1103/revmodphys.54.437 · Cited by 7,455
Electronic Confinement and Coherence in Patterned Epitaxial Graphene
Berger, C., Song, Z., Li, X., Wu, X., Brown, N., Naud, C., Mayou, D., Li, T., Hass, J., Marchenkov, A. N., et al. (2006) · Science · doi:10.1126/science.1125925 · Cited by 5,535
Self-citationEnergy Band-Gap Engineering of Graphene Nanoribbons
Han, M. Y., Özyilmaz, B., Zhang, Y., & Kim, P. (2007) · Physical Review Letters · doi:10.1103/physrevlett.98.206805 · Cited by 5,207
Edge state in graphene ribbons: Nanometer size effect and edge shape dependence
Nakada, K., Fujita, M., Dresselhaus, G., & Dresselhaus, M. S. (1996) · Physical Review B · doi:10.1103/physrevb.54.17954 · Cited by 3,987
Berger, C., Song, Z., Li, T., Li, X., Ogbazghi, A. Y., Feng, R., Dai, Z., Marchenkov, A. N., Conrad, E. H., First, P. N., et al. (2004) · The Journal of Physical Chemistry B · doi:10.1021/jp040650f · Cited by 3,548
Self-citationTowards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide
Emtsev, K. V., Bostwick, A., Horn, K., Jobst, J., Kellogg, G. L., Ley, L., McChesney, J. L., Ohta, T., Reshanov, S. A., Röhrl, J., et al. (2009) · Nature Materials · doi:10.1038/nmat2382 · Cited by 2,651
Substrate-induced bandgap opening in epitaxial graphene
Zhou, S. Y., Gweon, G.-H., Fedorov, A. V., First, P. N., de Heer, W. A., Lee, D.-H., Guinea, F., Castro Neto, A. H., & Lanzara, A. (2007) · Nature Materials · doi:10.1038/nmat2003 · Cited by 2,381
Self-citationSingle-walled carbon nanotube electronics
McEuen, P. L., Fuhrer, M. S., & Park, H. (2002) · IEEE Transactions on Nanotechnology · doi:10.1109/tnano.2002.1005429 · Cited by 1,209
Quasi-Free-Standing Epitaxial Graphene on SiC Obtained by Hydrogen Intercalation
Riedl, C., Coletti, C., Iwasaki, T., Zakharov, A. A., & Starke, U. (2009) · Physical Review Letters · doi:10.1103/physrevlett.103.246804 · Cited by 1,068
Cited by
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Identifying carbon as the source of visible single-photon emission from hexagonal boron nitride
Mendelson, N., Chugh, D., Reimers, J. R., Cheng, T. S., Gottscholl, A., Long, H., Mellor, C. J., Zettl, A., Dyakonov, V., Beton, P. H., et al. (2021) · Nature Materials · doi:10.1038/s41563-020-00850-y · Cited by 394
Machine learning in materials design: Algorithm and application*
Song, Z., Chen, X., Meng, F., Cheng, G., Wang, C., Sun, Z., & Yin, W.-J. (2020) · Chinese Physics B · doi:10.1088/1674-1056/abc0e3 · Cited by 63
Metadata
- Authors
- de Heer, W. A., Berger, C., Ruan, M., Sprinkle, M., Li, X., Hu, Y., Zhang, B., Hankinson, J., & Conrad, E.
- Venue
- Proceedings of the National Academy of Sciences
- Published
- 2011-09-29
- Volume
- 108
- Issue
- 41
- Pages
- 16900-16905
- ISSN
- 0027-8424 (ISSN-L)
- 1091-6490
- OpenAlex
- W2143625286
- Cited by
- 470
- References
- 33
- FWCI
- 20.76
- Type
- journal article
- Language
- en
- Open access
- green
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